STMicroelectronics M27W512-80B6TR 512 kbit 64kb x8 low voltage uv eprom and otp eprom Datasheet

M27W512
512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM
■
2.7V to 3.6V SUPPLY VOLTAGE in READ
OPERATION
■
ACCESS TIME:
– 70ns at VCC = 3.0V to 3.6V
– 80ns at VCC = 2.7V to 3.6V
■
PIN COMPATIBLE with M27C512
■
LOW POWER CONSUMPTION:
– 15µA max Standby Current
28
28
1
1
FDIP28W (F)
PDIP28 (B)
– 15mA max Active Current at 5MHz
■
PROGRAMMING TIME 100µs/byte
■
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
■
PLCC32 (K)
TSOP28 (N)
8 x 13.4 mm
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 3Dh
DESCRIPTION
The M27W512 is a low voltage 512 Kbit EPROM
offered in the two range UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems and is organized as
65,536 by 8 bits.
The M27W512 operates in the read mode with a
supply voltage as low as 2.7V at –40 to 85°C temperature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery recharges.
The FDIP28W (window ceramic frit-seal package)
has transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27W512 is offered in PDIP28, PLCC32 and
TSOP28 (8 x 13.4 mm) packages.
March 2000
Figure 1. Logic Diagram
VCC
16
8
A0-A15
E
Q0-Q7
M27W512
GVPP
VSS
AI01584
1/16
M27W512
VCC
A14
A13
A8
A9
A11
GVPP
A10
E
Q7
Q6
Q5
Q4
Q3
1 32
A6
A5
A4
A3
A2
A1
A0
NC
Q0
9
M27W512
17
AI02679
AI01585
Figure 2C. TSOP Connections
GVPP
A11
A9
A8
A13
A14
VCC
A15
A12
A7
A6
A5
A4
A3
22
28
1
7
Table 1. Signal Names
21
M27W512
15
14
8
AI01586
2/16
25
A8
A9
A11
NC
GVPP
A10
E
Q7
Q6
VSS
DU
Q3
Q4
Q5
1
28
2
27
3
26
4
25
5
24
6
23
7
22
M27W512
8
21
9
20
10
19
11
18
12
17
13
16
14
15
Q1
Q2
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
VSS
Figure 2B. LCC Connections
A7
A12
A15
DU
VCC
A14
A13
Figure 2A. DIP Connections
A10
E
Q7
Q6
Q5
Q4
Q3
VSS
Q2
Q1
Q0
A0
A1
A2
A0-A15
Address Inputs
Q0-Q7
Data Outputs
E
Chip Enable
GVPP
Output Enable / Program Supply
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
DU
Don’t Use
M27W512
Table 2. Absolute Maximum Ratings (1)
Symbol
Value
Unit
Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
Supply Voltage
–2 to 7
V
–2 to 13.5
V
–2 to 14
V
TA
VCC
VA9 (2)
VPP
Parameter
A9 Voltage
Program Supply Voltage
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
E
GV PP
A9
Q7-Q0
Read
VIL
V IL
X
Data Out
Output Disable
VIL
VIH
X
Hi-Z
VIL Pulse
VPP
X
Data In
Program Inhibit
V IH
VPP
X
Hi-Z
Standby
V IH
X
X
Hi-Z
Electronic Signature
VIL
V IL
VID
Codes
Mode
Program
Note: X = VIH or VIL, VID = 12V ± 0.5V.
Table 4. Electronic Signature
Identifier
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH
0
0
1
1
1
1
0
1
3Dh
3/16
M27W512
Table 5. AC Measurement Conditions
High Speed
Standard
Input Rise and Fall Times
≤ 10ns
≤ 20ns
Input Pulse Voltages
0 to 3V
0.4V to 2.4V
1.5V
0.8V and 2V
Input and Output Timing Ref. Voltages
Figure 3. AC Testing Input Output Waveform
Figure 4. AC Testing Load Circuit
1.3V
High Speed
1N914
3V
1.5V
3.3kΩ
0V
DEVICE
UNDER
TEST
Standard
2.4V
OUT
CL
2.0V
0.8V
0.4V
AI01822
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Symbol
C IN
COUT
Parameter
Input Capacitance
Output Capacitance
Test Condit ion
Min
Max
Unit
VIN = 0V
6
pF
VOUT = 0V
12
pF
Note: 1. Sampled only, not 100% tested.
DEVICE OPERATION
The modes of operations of the M27W512 are listed in the Operating Modes table. A single power
supply is required in the read mode. All inputs are
TTL levels except for GVPP and 12V on A9 for
Electronic Signature.
Read Mode
The M27W512 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time
4/16
(tAVQV) is equal to the delay from E to output
(tELQV). Data is available at the output after a delay
of t GLQV from the falling edge of G, assuming that
E has been low and the addresses have been stable for at least tAVQV-tGLQV.
Standby Mode
The M27W512 has a standby mode which reduces the supply current from 15mA to 15µA with low
voltage operation VCC ≤ 3.6V, see Read Mode DC
Characteristics table for details. The M27W512 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the GVPP input.
M27W512
Table 7. Read Mode DC Characteristics (1)
(TA = –40 to 85°C; VCC = 2.7V to 3.6V; VPP = VCC)
Symbol
Parameter
Test Condition
Min
Max
Unit
0V ≤ VIN ≤ VCC
±10
µA
0V ≤ VOUT ≤ VCC
±10
µA
E = VIL, G = V IL,
IOUT = 0mA, f = 5MHz
VCC ≤ 3.6V
15
mA
E = VIH
1
mA
E > VCC – 0.2V,
VCC ≤ 3.6V
15
µA
VPP = VCC
10
µA
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC
Supply Current
ICC1
Supply Current (Standby) TTL
ICC2
Supply Current (Standby) CMOS
IPP
Program Current
VIL
Input Low Voltage
–0.6
0.2 VCC
V
VIH (2)
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage TTL
IOH = –1mA
2.4
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Maximum DC voltage on Output is VCC +0.5V.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line control function which accommodates the use of multiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the primary device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselected memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, I CC, has three segments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output.
The associated transient voltage peaks can be
suppressed by complying with the two line output
control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor of low inherent inductance and should be
placed as close to the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devices. The bulk capacitor should be located near the
power supply connection point.The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
5/16
M27W512
Table 8. Read Mode AC Characteristics (1)
(TA = –40 to 85°C; VCC = 2.7V to 3.6V; VPP = VCC)
M27W102
Symbol
Alt
Parameter
-100
(-120/-150/-200)
-80 (3)
Test
Condition
Unit
VCC = 3.0V to 3.6V VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V
Min
Max
Min
Max
Min
Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL,
G = VIL
70
80
100
ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
70
80
100
ns
tGLQV
tOE
Output Enable Low
to Output Valid
E = VIL
40
50
60
ns
tEHQZ (2)
tDF
Chip Enable High
to Output Hi-Z
G = VIL
0
40
0
50
0
60
ns
tGHQZ (2)
tDF
Output Enable High
to Output Hi-Z
E = VIL
0
40
0
50
0
60
ns
tAXQX
tOH
Address Transition
to Output Transition
E = VIL,
G = VIL
0
0
0
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Figure 5. Read Mode AC Waveforms
A0-A15
VALID
tAVQV
VALID
tAXQX
E
tGLQV
tEHQZ
G
tELQV
Q0-Q7
tGHQZ
Hi-Z
AI00735B
6/16
M27W512
Table 9. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Parameter
Test Condition
Min
VIL ≤ VIN ≤ VIH
Max
Unit
±10
µA
50
mA
50
mA
ILI
Input Leakage Current
I CC
Supply Current
IPP
Program Current
VIL
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V
VOH
Output High Voltage TTL
IOH = –1mA
VID
A9 Voltage
E = VIL
3.6
V
11.5
12.5
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Table 10. MARGIN MODE AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
tA9HVPH
t AS9
VA9 High to VPP High
2
µs
tVPHEL
tVPS
VPP High to Chip Enable Low
2
µs
tA10HEH
tAS10
VA10 High to Chip Enable High (Set)
1
µs
tA10LEH
tAS10
VA10 Low to Chip Enable High (Reset)
1
µs
tEXA10X
tAH10
Chip Enable Transition to VA10 Transition
1
µs
t EXVPX
tVPH
Chip Enable Transition to VPP Transition
2
µs
tVPXA9X
tAH9
VPP Transition to VA9 Transition
2
µs
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
Programming
The M27W512 has been designed to be fully compatible with the M27C512 and has the same electronic signature. As a result the M27W512 can be
programmed as the M27C512 on the same programming equipment applying 12.75V on VPP and
6.25V on VCC . The M27W512 can use PRESTO
IIB Programming Algorithm that drastically reduces the programming time. Nevertheless to achieve
compatibility with all programming equipments,
PRESTO II Programming Algorithm can be used
as well. When delivered (and after each ‘1’s erasure for UV EPROM), all bits of the M27W512 are
in the ’1’ state. Data is introduced by selectively
programming ’0’s into the desired bit locations. Although only ’0’s will be programmed, both ’1’s and
’0’s can be present in the data word. The only way
to change a ‘0’ to a ‘1’s by die exposure to ultraviolet light (UV EPROM). The M27W512 is in the
programming mode when VPP input is at 12.75V
and E is pulsed to VIL. The data to be programmed
is applied to 8 bits in parallel to the data output
pins. The levels required for the address and data
inputs are TTL. VCC is specified to be 6.25V ±
0.25V.
7/16
M27W512
Table 11. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Alt
Parameter
Test Condition
Min
Max
tAVEL
tAS
Address Valid to Chip Enable Low
2
µs
tQVEL
tDS
Input Valid to Chip Enable Low
2
µs
t VCHEL
tVCS
VCC High to Chip Enable Low
2
µs
tVPHEL
tOES
VPP High to Chip Enable Low
2
µs
tVPLVPH
tPRT
VPP Rise Time
50
ns
tELEH
tPW
Chip Enable Program Pulse Width (Initial)
95
tEHQX
tDH
Chip Enable High to Input Transition
2
µs
tEHVPX
tOEH
Chip Enable High to VPP Transition
2
µs
tVPLEL
tVR
VPP Low to Chip Enable Low
2
µs
tELQV
tDV
Chip Enable Low to Output Valid
tEHQZ (2)
tDFP
Chip Enable High to Output Hi-Z
0
t EHAX
tAH
Chip Enable High to Address Transition
0
105
µs
130
ns
ns
Figure 6. MARGIN MODE AC Waveforms
VCC
A8
A9
tVPXA9X
GVPP
tVPHEL
tEXVPX
E
tA10HEH
tEXA10X
A10 Set
A10 Reset
tA10LEH
AI00736B
Note: A8 High level = 5V; A9 High level = 12V.
8/16
µs
1
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP.
2. Sampled only, not 100% tested.
tA9HVPH
Unit
M27W512
Figure 7. Programming and Verify Modes AC Waveforms
A0-A15
VALID
tAVEL
tEHAX
DATA IN
Q0-Q7
DATA OUT
tQVEL
tEHQX
VCC
tEHQZ
tELQV
tVCHEL
tEHVPX
GVPP
tVPHEL
tVPLEL
E
tELEH
PROGRAM
VERIFY
AI00737
Figure 8. Programming Flowchart
VCC = 6.25V, VPP = 12.75V
SET MARGIN MODE
n=0
E = 100µs Pulse
NO
++n
= 25
YES
FAIL
NO
++ Addr
VERIFY
YES
Last
Addr
NO
YES
RESET MARGIN MODE
CHECK ALL BYTES
1st: VCC = 5V
2nd: VCC = 2.7V
AI00738C
PRESTO IIB Programming Algorithm
PRESTO IIB Programming Algorithm allows the
whole array to be programmed with a guaranteed
margin, in a typical time of 6.5 seconds. This can
be achieved with STMicroelectronics M27W512
due to several design innovations described in the
M27W512 datasheet to improve programming efficiency and to provide adequate margin for reliability. Before starting the programming the
internal MARGIN MODE circuit must be set in order to guarantee that each cell is programmed with
enough margin. Then a sequence of 100µs program pulses is applied to each byte until a correct
verify occurs (see Figure 8). No overprogram pulses are applied since the verify in MARGIN MODE
at V CC much higher than 3.6V, provides the necessary margin.
Program Inhibit
Programming of multiple M27W512s in parallel
with different data is also easily accomplished. Except for E, all like inputs including GVPP of the parallel M27W512 may be common. A TTL low level
pulse applied to a M27W512’s E input, with VPP at
12.75V, will program that M27W512. A high level
E input inhibits the other M27W512s from being
programmed.
Program Verify
A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with G
at V IL. Data should be verified with tELQV after the
falling edge of E.
9/16
M27W512
On-Board Programming
The M27W512 can be directly programmed in the
application circuit. See the relevant Application
Note AN620.
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the M27W512. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27W512. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address
lines must be held at VIL during Electronic Signature mode. Byte 0 (A0 = VIL) represents the manufacturer code and byte 1 (A0 = VIH) the device
identifier code. For the STMicroelectronics
M27W512, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q7 to Q0.
Note that the M27W512 and M27C512 have the
same identifier byte.
10/16
ERASURE OPERATION (applies for UV EPROM)
The erasure characteristics of the M27W512 is
such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 Å range.
Research shows that constant exposure to room
level fluorescent lighting could erase a typical
M27W512 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27W512 is to be
exposed to these types of lighting conditions for
extended periods of time, it is suggested that
opaque labels be put over the M27W512 window
to prevent unintentional erasure. The recommended erasure procedure for the M27W512 is exposure to short wave ultraviolet light which has
wavelength 2537 Å. The integrated dose (i.e. UV
intensity x exposure time) for erasure should be a
minimum of 15 W-sec/cm2. The erasure time with
this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 µW/cm2 power
rating. The M27W512 should be placed within 2.5
cm (1 inch) of the lamp tubes during the erasure.
Some lamps have a filter on their tubes which
should be removed before erasure.
M27W512
Table 12. Ordering Information Scheme
Example:
M27W512
-80 K
6
TR
Device Type
M27
Supply Voltage
W = 2.7V to 3.6V
Device Function
512 = 512 Kbit (64Kb x 8)
Speed
-80 (1,2) = 80 ns
-100 = 100 ns
Not For New Design (3)
-120 = 120 ns
-150 = 150 ns
-200 = 200 ns
Package
F = FDIP28W (4)
B = PDIP28
K = PLCC32
N = TSOP28: 8 x 13.4 mm (4)
Temperature Range
6 = –40 to 85 °C
Optio ns
TR = Tape & Reel Packing
Note: 1.
2.
3.
4.
High Speed, see AC Characteristics section for further information.
This speed also guarantees 70ns access time at VCC = 3.0V to 3.6V.
These speeds are replaced by the 100ns.
Packages option available on request. Please contact STMicroelectronics local Sales Office.
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
Table 13. Revision History
Date
Revision Details
July 1999
First Issue
03/20/00
FDIP28W Package Dimension, L Max added (Table 14)
TSOP32 Package Dimension changed (Table 17)
0 to 70°C Temperature Range deleted
Speed Classes changed
11/16
M27W512
Table 14. FDIP28W - 28 pin Ceramic Frit-seal DIP, with window, Package Mechanical Data
mm
inches
Symbol
Typ
Min
Max
A
Typ
Min
5.71
0.225
A1
0.50
1.78
0.020
0.070
A2
3.90
5.08
0.154
0.200
B
0.40
0.55
0.016
0.022
B1
1.17
1.42
0.046
0.056
C
0.22
0.31
0.009
0.012
D
38.10
1.500
E
15.40
15.80
0.606
0.622
E1
13.05
13.36
0.514
0.526
e1
2.54
–
–
0.100
–
–
e3
33.02
–
–
1.300
–
–
eA
16.17
18.32
0.637
0.721
L
3.18
4.10
0.125
0.161
S
1.52
2.49
0.060
0.098
–
–
–
–
α
4°
15°
4°
15°
N
28
∅
7.11
0.280
28
Figure 9. FDIP28W - 28 pin Ceramic Frit-seal DIP, with window, Package Outline
A2
A3
A1
B1
B
A
L
e
α
eA
D2
C
eB
D
S
N
∅
E1
E
1
FDIPW-a
Drawing is not to scale.
12/16
Max
M27W512
Table 15. PDIP28 - 28 pin Plastic DIP, 600 mils width, Package Mechanical Data
mm
inches
Symbol
Typ
Min
Max
A
–
A1
Min
Max
5.08
–
0.200
0.38
–
0.015
–
A2
3.56
4.06
0.140
0.160
B
0.38
0.51
0.015
0.020
–
–
–
–
C
0.20
0.30
0.008
0.012
D
36.83
37.34
1.450
1.470
B1
1.52
Typ
0.060
D2
33.02
–
–
1.300
–
–
E
15.24
–
–
0.600
–
–
13.59
13.84
0.535
0.545
E1
e1
2.54
–
–
0.100
–
–
eA
14.99
–
–
0.590
–
–
eB
15.24
17.78
0.600
0.700
L
3.18
3.43
0.125
0.135
S
1.78
2.08
0.070
0.082
α
0°
10°
0°
10°
N
28
28
Figure 10. PDIP28 - 28 pin Plastic DIP, 600 mils width, Package Outline
A2
A1
B1
B
A
L
e1
α
eA
D2
C
eB
D
S
N
E1
E
1
PDIP
Drawing is not to scale.
13/16
M27W512
Table 16. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symbol
mm
Min
Max
Min
Max
A
2.54
3.56
0.100
0.140
A1
1.52
2.41
0.060
0.095
A2
–
0.38
–
0.015
B
0.33
0.53
0.013
0.021
B1
0.66
0.81
0.026
0.032
D
12.32
12.57
0.485
0.495
D1
11.35
11.56
0.447
0.455
D2
9.91
10.92
0.390
0.430
E
14.86
15.11
0.585
0.595
E1
13.89
14.10
0.547
0.555
E2
12.45
13.46
0.490
0.530
–
–
–
–
0.00
0.25
0.000
0.010
–
–
–
–
e
Typ
inches
1.27
F
R
0.89
Typ
0.050
0.035
N
32
32
Nd
7
7
Ne
9
9
CP
0.10
0.004
Figure 11. PLCC32 - 32 lead Plastic Leaded Chip Carrier, Package Outline
D
D1
A1
A2
1 N
B1
E1 E
Ne
e
D2/E2
F
B
0.51 (.020)
1.14 (.045)
A
Nd
R
PLCC
Drawing is not to scale.
14/16
CP
M27W512
Table 17. TSOP28 - 28 lead Plastic Thin Small Outline, 8 x 13.4 mm, Package Mechanical Data
mm
inch
Symbol
Typ
Min
Max
Typ
Min
Max
A
1.250
0.0492
A1
0.200
0.0079
A2
0.950
1.150
0.0374
0.0453
B
0.170
0.270
0.0067
0.0106
C
0.100
0.210
0.0039
0.0083
D
13.200
13.600
0.5197
0.5354
D1
11.700
11.900
0.4606
0.4685
–
–
–
–
E
7.900
8.100
0.3110
0.3189
L
0.500
0.700
0.0197
0.0276
α
0°
5°
0°
5°
N
28
e
0.550
0.0217
28
CP
0.100
0.0039
Figure 12. TSOP28 - 28 lead Plastic Thin Small Outline, 8 x 13.4 mm, Package Outline
A2
22
21
e
28
1
E
B
7
8
D1
A
CP
D
DIE
C
TSOP-c
A1
α
L
Drawing is not to scale.
15/16
M27W512
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
 2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A .
http://w ww.st.com
16/16