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FSEZ1016A Primary-Side-Regulation PWM Integrated Power MOSFET Features Description Constant-Voltage (CV) and Constant-Current (CC) Control without Secondary-Feedback Circuitry Accurate Constant Current Achieved by Fairchild’s Proprietary TRUECURRENT® Technique Green Mode: Frequency Reduction at Light-Load This primary-side PWM integrated power MOSFET significantly simplifies power supply designs that require CV and CC regulation capabilities. FSEZ1016A controls the output voltage and current precisely with only the information in the primary side of the power supply, not only removing the output current sensing loss, but also eliminating all secondary feedback circuitry. Low Startup Current: 10 μA Maximum Brownout Protection with Auto-Restart Fixed PWM Frequency at 43 kHz with Frequency Hopping to Reduce EMI Low Operating Current: 3.5 mA The green-mode function with a low startup current (10µA) maximizes the light-load efficiency so the power supply can meet stringent standby power regulations. Compared with conventional secondary-side regulation approach; the FSEZ1016A can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. Peak-Current-Mode Control in CV Mode Cycle-by-Cycle Current Limiting Over-Temperature Protection (OTP) with Auto-Restart FSEZ1016A is available in a 7-pin SOIC package. A typical output CV/CC characteristic envelope is shown in Figure 1. VDD Over-Voltage Protection (OVP) with Auto-Restart VDD Under-Voltage Lockout (UVLO) VO SOIC-7 Package Applications Battery Chargers for Cellular Phones, Cordless ±7% Phones, PDAs, Digital Cameras, Power Tools Replaces Linear Transformer and RCC SMPS Offline High Brightness (HB) LED Drivers IO Related Resources AN-6067 Design Guide for FAN100/102 and Figure 1. Typical Output V-I Characteristic FSEZ1016A/1216 Ordering Information Part Number Operating Temperature Range MOSFET BVDSS MOSFET RDS(ON) FSEZ1016AMY -40°C to +125°C 600 V 9.3 Ω (Typical) Package 7-Lead, Small Outline Integrated Circuit Package (SOIC) Packing Method Tape & Reel For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 www.fairchildsemi.com FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET January 2014 Figure 2. Typical Application Internal Block Diagram Figure 3. © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Application Diagram Functional Block Diagram www.fairchildsemi.com 2 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Marking Information F - Fairchild Logo Z - Plant Code X – 1-Digit Year Code Y – 1-Digit Week Code TT – 2-Digit Die Run Code T - Package Type (M=SOIC) P - Y: Green Package M - Manufacture Flow Code Figure 4. Top Mark Pin Configuration Figure 5. Pin Configuration Pin Definitions Pin # Name 1 CS 2 GND Ground. 3 COMI Constant Current Loop Compensation. This pin connects a capacitor and a resistor between COMI and GND for compensation current loop gain. 4 COMV Constant Voltage Loop Compensation. This pin connects a capacitor and a resistor between COMV and GND for compensation voltage loop gain. 5 VS 6 VDD 7 NC 8 DRAIN Description Current Sense. This pin connects a current sense resistor to sense the MOSFET current for peak-current-mode control in CV mode and provides for output-current regulation in CC mode. Voltage Sense. This pin detects the output voltage information and discharge time base on voltage of auxiliary winding. This pin connected two divider resistors and one capacitor. Supply. The power supply pin. IC operating current and MOSFET driving current are supplied using this pin. This pin is connected to an external VDD capacitor of typically 10 µF. The threshold voltages for startup and turn-off are 16 V and 5 V, respectively. The operating current is lower than 5 mA. No connection. Drain. This pin is the high-voltage power MOSFET drain. © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 www.fairchildsemi.com 3 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. (1,2) Max. Unit 30 V VDD DC Supply Voltage VVS VS Pin Input Voltage -0.3 7.0 V VCS CS Pin Input Voltage -0.3 7.0 V VCOMV Voltage-Error Amplifier Output Voltage -0.3 7.0 V VCOMI Voltage-Error Amplifier Output Voltage -0.3 7.0 V VDS 600 V TC=25°C 1.0 A TC=100°C 0.6 A Drain-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current 4 A EAS Single Pulse Avalanche Energy 33 mJ IAR Avalanche Current 1 A PD Power Dissipation (TA＜50°C) 660 mW ΘJA Thermal Resistance (Junction-to-Air) 153 °C/W ΘJC Thermal Resistance (Junction-to-Case) 39 °C/W TJ TSTG TL ESD Operating Junction Temperature -40 +150 °C Storage Temperature Range -55 +150 °C +260 °C Lead Temperature (Wave Soldering or IR, 10 Seconds) Electrostatic Discharge Capability Human Body Model, JEDEC: JESD22-A114 Charged Device Model, JEDEC: JESD22-C101 2 kV 2 Notes: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. 2. All voltage values, except differential voltages, are given with respect to GND pin. FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Absolute Maximum Ratings Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol TA Parameter Conditions Operating Ambient Temperature © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 Min. -40 Typ. Max. Unit +125 °C www.fairchildsemi.com 4 VDD=15V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units VDD Section VOP Continuously-Operating Voltage 25 V VDD-ON Turn-On Threshold Voltage 15 16 17 V VDD-OFF Turn-Off Threshold Voltage 4.5 5.0 5.5 V IDD-ST Startup Current 0<VDD<VDD-ON-0.16 V 3.7 10.0 μA IDD-OP Operating Current VDD=20 V, fS= fOSC VVS=2 V, VCS=3 V CL=1 nF 3.5 5.0 mA IDD-GREEN Green Mode Operating Supply Current VDD=20 V, VVS=2.7 V CL=1 nF, VCOMV=0 V fS=fOSC-N-MIN, VCS=0 V 1.0 2.5 mA VDD-OVP VDD OVP Level VCS=3 V, VVS=2.3 V 27 28 29 V tD-VDDOVP VDD OVP Debounce Time fS=fOSC, VVS=2.3V 100 250 400 μs Center Frequency TA=25°C 40 43 46 Frequency Hopping Range TA=25°C ±1.8 ±2.6 ±3.6 Oscillator Section fOSC Frequency fFHR Frequency Hopping Period TA=25°C fOSC-N-MIN Minimum Frequency at No-Load fOSC-CM-MIN KHz 3 ms VVS=2.7 V, VCOMV=0 V 550 Hz Minimum Frequency at CCM VVS=2.3 V, VCS=0.5 V 20 KHz fDV Frequency Variation vs. VDD Deviation TA=25°C, VDD=10 V to 25 V 5 % fDT Frequency Variation vs. Temperature Deviation TA=-40°C to +125°C 20 % Voltage-Sense Section IVS-UVP Itc VBIAS-COMV Sink Current for Brownout Protection RVS=20 kΩ IC Compensation Bias Current VCOMV=0 V, TA=25°C, RVS=20 KΩ Adaptive Bias Voltage Dominated by VCOMV 180 μA 9.5 μA 1.4 V FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Electrical Characteristics Current-Sense Section tPD Propagation Delay to Gate Output 100 200 ns tMIN-N Minimum On Time at No-Load VVS= -0.8 V, RCS=2 kΩ VCOMV=1 V 1100 ns tMINCC Minimum On Time in CC Mode VVS=0 V, VCOMV=2 V 300 ns 1.3 V VTH Threshold Voltage for Current Limit Current-Error-Amplifier Section VIR Reference Voltage II-SINK Output Sink Current VCS=3 V, VCOMI=2.5 V 55 μA Output Source Current VCS=0 V, VCOMI=2.5 V 55 μA Output High Voltage VCS=0 V II-SOURCE VI-HGH 2.475 4.5 2.500 2.525 V V Continued on the following page… © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 www.fairchildsemi.com 5 VDD=15 V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units 2.475 2.500 2.525 Voltage-Error-Amplifier Section VVR Reference Voltage VN Green-Mode Starting Voltage on COMV Pin fS=fOSC-2 KHz, VVS=2.3 V 2.8 V VG Green-Mode Ending Voltage on COMV Pin fS=1 KHz 0.8 V Output Sink Current VVS=3 V, VCOMV=2.5 V 90 μA Output Source Current VVS=2 V, VCOMV=2.5 V 90 μA Output High Voltage VVS=2.3 V IV-SINK IV-SOURCE VV-HGH 4.5 V V Internal MOSFET Section DCYMAX BVDSS Maximum Duty Cycle 75 ID=250 μA, VGS=0 V Drain-Source Breakdown Voltage ∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250 μA, Referenced to 25°C % 600 V 0.6 V/°C IS Maximum Continuous Drain-Source Diode Forward Current 1 A ISM Maximum Pulsed Drain-Source Diode Forward Current 4 A 11.5 Ω VDS=600 V, VGS=0 V, TC=25°C 1 μA VDS=480 V, VGS=0 V, TC=100°C 10 μA 7 24 ns Rise Time 21 52 ns Turn-Off Delay Time 13 36 ns Fall Time 27 64 ns 130 170 pF 19 25 pF RDS(ON) IDSS tD-ON tr tD-OFF tf ID=0.5 A, VGS=10 V Static Drain-Source On-Resistance Drain-Source Leakage Current VDS=300 V, ID=1.1 A, RG=25 Ω (3,4) Turn-On Delay Time CISS Input Capacitance COSS Output Capacitance VGS=0 V, VDS=25 V fS=1 MHz 9.3 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Electrical Characteristics (Continued) Over-Temperature-Protection Section TOTP Threshold Temperature for OTP 140 °C Notes: 3. Pulse Test: pulse width ≦ 300μs; duty cycle ≦ 2%. 4. Essentially independent of operating temperature. © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 www.fairchildsemi.com 6 5.5 16.6 5.3 VDD-OFF (V) VDD-ON (V) 17 16.2 15.8 15.4 5.1 4.9 4.7 15 4.5 -40 -30 -15 0 25 50 75 85 100 125 -40 -30 -15 0 Temperature (ºC) Figure 6. Turn-On Threshold Voltage (VDD-ON) vs. Temperature Figure 7. 4.5 75 85 100 125 Turn-Off Threshold Voltage (VDD-OFF) vs. Temperature 44 fOSC (KHz) IDD-OP (mA) 50 45 4.1 3.7 3.3 2.9 43 42 41 40 39 2.5 -40 -30 -15 0 25 50 75 85 100 -40 125 -30 -15 Figure 8. 0 25 50 75 85 100 125 Temperature (ºC) Temperature (ºC) Operating Current (IDD-OP) vs. Temperature Figure 9. 2.525 2.525 2.515 2.515 2.505 2.505 VIR (V) VVR (V) 25 Temperature (ºC) 2.495 2.485 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Typical Performance Characteristics Center Frequency (fOSC) vs. Temperature 2.495 2.485 2.475 2.475 -40 -30 -15 0 25 50 75 85 100 125 -40 Temperature (ºC) -15 0 25 50 75 85 100 125 Temperature (ºC) Figure 10. Reference Voltage (VVR) vs. Temperature © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 -30 Figure 11. Reference Voltage (VIR) vs. Temperature www.fairchildsemi.com 7 25 560 23 fOSC-CM-MIN (KHz) fOSC-N-MIN (Hz) 600 520 480 440 21 19 17 400 15 -40 -30 -15 0 25 50 75 85 100 125 -40 -30 -15 Temperature (ºC) 25 75 85 100 125 Figure 13. Minimum Frequency at CCM (fOSC-CM-MIN) vs. Temperature 1300 30 25 1200 tMIN-N (ns) 20 15 10 1100 1000 900 5 0 800 -40 -30 -15 0 25 50 75 85 100 -40 125 -30 -15 0 Temperature (ºC) 25 50 75 85 100 125 Temperature (ºC) Figure 14. Green-Mode Frequency Decreasing Rate (SG) vs. Temperature Figure 15. Minimum On-Time at No-Load (tMIN-N) vs. Temperature 5 1 4 0.8 3 0.6 VG (V) VN (V) 50 Temperature (ºC) Figure 12. Minimum Frequency at No Load (fOSC-N-MIN) vs. Temperature SG (KHz/V) 0 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Typical Performance Characteristics (Continued) 2 1 0.4 0.2 0 0 -40 -30 -15 0 25 50 75 85 100 125 -40 Temperature (ºC) -15 0 25 50 75 85 100 125 Temperature (ºC) Figure 17. Green-Mode Ending Voltage on COMV Pin (VG) vs. Temperature Figure 16. Green-Mode Starting Voltage on COMV Pin (VN) vs. Temperature © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 -30 www.fairchildsemi.com 8 95 92 91 IV-SOURCE (μA) IV-SINK (μA) 95 89 86 83 87 83 79 80 75 -40 -30 -15 0 25 50 75 85 100 125 -40 -30 -15 0 Temperature (ºC) 50 75 85 100 125 Figure 19. Output Source Current (IV-SOURCE) vs. Temperature 65 65 62 62 II-SOURCE (μA) II-SINK (μA) Figure 18. Output Sink Current (IV-SINK) vs. Temperature 59 56 53 59 56 53 50 50 -40 -30 -15 0 25 50 75 85 100 125 -40 -30 -15 0 Temperature (ºC) 25 50 75 85 100 125 Temperature (ºC) Figure 20. Output Sink Current (II-SINK) vs. Temperature Figure 21. Output Source Current (II-SOURCE) vs. Temperature 80 800 750 76 700 DCYMAX (%) BVDSS (V) 25 Temperature (ºC) FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Typical Performance Characteristics (Continued) 650 600 72 68 64 550 500 60 -40 -30 -15 0 25 50 75 85 100 -40 125 Temperature (ºC) -15 0 25 50 75 85 100 125 Temperature (ºC) Figure 22. Drain-Source Breakdown Voltage (BVDSS) vs. Temperature © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 -30 Figure 23. Maximum Duty Cycle (DCYMAX) vs. Temperature www.fairchildsemi.com 9 Figure 24 shows the basic circuit diagram of a primaryside regulated flyback converter, with typical waveforms shown in Figure 25. Generally, discontinuous conduction mode (DCM) operation is preferred for primary-side regulation because it allows better output regulation. The operation principles of DCM flyback converter are as follows: regulation mode, VCOMI determines the duty cycle while VCOMV is saturated to HIGH. IO D During the MOSFET ON time (tON), input voltage (VDL) is applied across the primary-side inductor (Lm). Then MOSFET current (Ids) increases linearly from zero to the peak value (Ipk). During this time, the energy is drawn from the input and stored in the inductor. + V DL VAC Lm - + VF - + VO L O A D - Ids When the MOSFET is turned off, the energy stored in the inductor forces the rectifier diode (D) to turn on. While the diode is conducting, the output voltage (VO), together with diode forward-voltage drop (VF), are 2 applied across the secondary-side inductor (Lm×Ns / 2 Np ) and the diode current (ID) decreases linearly from the peak value (Ipk× Np/Ns) to zero. At the end of inductor current discharge time (tDIS), all the energy stored in the inductor has been delivered to the output. EA_I VCOMI IO Estimator CS RCS Ref t DIS Detector PWM Control V COMV VS NA VDD VO Estimator EA_V RS1 Ref RS2 Primary-Side Regulation Controller When the diode current reaches zero, the transformer auxiliary winding voltage (VW) begins to oscillate by the resonance between the primary-side inductor (Lm) and the effective capacitor loaded across MOSFET. + Vw - Figure 24. Simplified PSR Flyback Converter Circuit During the inductor current discharge time, the sum of output voltage and diode forward-voltage drop is reflected to the auxiliary winding side as (VO+VF)× NA/NS. Since the diode forward-voltage drop decreases as current decreases, the auxiliary winding voltage reflects the output voltage best at the end of diode conduction time where the diode current diminishes to zero. By sampling the winding voltage at the end of the diode conduction time, the output voltage information can be obtained. The internal error amplifier for output voltage regulation (EA_V) compares the sampled voltage with internal precise reference to generate error voltage (VCOMV), which determines the duty cycle of the MOSFET in CV mode. Id s (MOSFET Drain-to-Source Current) I pk ID (Diode Current) I pk • NP NS I D .avg = I o Meanwhile, the output current can be estimated using the peak drain current and inductor current discharge time since output current is the same as the average of the diode current in steady state. VW (Auxiliary Winding Voltage) VF • The output current estimator detects the peak value of the drain current by a peak detection circuit and calculates the output current by the inductor discharge time (tDIS) and switching period (tS). This output information is compared with the internal precise reference to generate error voltage (VCOMI), which determines the duty cycle of the MOSFET in CC mode. With Fairchild’s innovative technique TRUECURRENT®, constant current (CC) output can be precisely controlled. NA NS VO • t ON t t Of the two error voltages, VCOMV and VCOMI, the smaller determines the duty cycle. During constant voltage regulation mode, VCOMV determines the duty cycle while VCOMI is saturated to HIGH. During constant current © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 ID Np:Ns FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Functional Description NA NS DI S S Figure 25. Key Waveforms of DCM Flyback Converter www.fairchildsemi.com 10 Built-in temperature compensation provides constant voltage regulation over a wide range of temperature variation. This internal compensation current compensates the forward-voltage drop variation of the secondary-side rectifier diode. ts Green-Mode Operation ts The FSEZ1016A uses voltage regulation error amplifier output (VCOMV) as an indicator of the output load and modulates the PWM frequency, as shown in Figure 26, such that the switching frequency decreases as load decreases. In heavy-load conditions, the switching frequency is fixed at 43 KHz. Once VCOMV decreases below 2.8 V, the PWM frequency starts to linearly decrease from 43 KHz to 550 Hz to reduce the switching losses. As VCOMV decreases below 0.8 V, the switching frequency is fixed at 550 Hz and FSEZ1016A enters “deep green” mode, where the operating current drops to 1 mA, reducing the standby power consumption. ts fs 45.6kHz 43 .0kHz 40 .4kHz t 3ms Swi tching Frequen cy Figure 27. Frequency Hopping 43kH z Startup Dee p Green Mode Green Mode Figure 28 shows the typical startup circuit and transformer auxiliary winding for a FSEZ1016A application. Before FSEZ1016A begins switching, it consumes only startup current (typically 10 μA) and the current supplied through the startup resistor charges the VDD capacitor (CDD). When VDD reaches turn-on voltage of 16 V (VDD-ON), FSEZ1016A begins switching, and the current consumed increases to 3.5 mA. Then, the power required for FSEZ1016A is supplied from the transformer auxiliary winding. The large hysteresis of VDD provides more hold-up time, which allows using a small capacitor for VDD. No rmal Mode 550H z 0.8V 2.8V FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Gate Drive Signal Temperature Compensation V COMV Figure 26. Switching Frequency in Green Mode Leading-Edge Blanking (LEB) At the instant the MOSFET is turned on, there is a highcurrent spike through the MOSFET, caused by primaryside capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the RCS resistor can lead to premature turn-off of the MOSFET. FSEZ1016A employs an internal leading-edge blanking (LEB) circuit to inhibit the PWM comparator for a short time after the MOSFET is turned on. External RC filtering is not required. Frequency Hopping EMI reduction is accomplished by frequency hopping, which spreads the energy over a wider frequency range than the bandwidth measured by the EMI test equipment. FSEZ1016A has an internal frequencyhopping circuit that changes the switching frequency between 40.4 kHz and 45.6 kHz with a period of 3 ms, as shown in Figure 27. © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 Figure 28. Startup Circuit www.fairchildsemi.com 11 VDD Over-Voltage Protection (OVP) VDD over-voltage protection prevents damage from overvoltage conditions. If the VDD voltage exceeds 28 V by open-feedback condition, OVP is triggered. The OVP has a debounce time (typical 250 µs) to prevent false triggering by switching noise. It also protects other switching devices from over voltage. The FSEZ1016A has several self-protective functions, such as Over-Voltage Protection (OVP), OverTemperature Protection (OTP), and brownout protection. All the protections are implemented as autorestart mode. When the auto-restart protection is triggered, switching is terminated and the MOSFET remains off. This causes VDD to fall. When VDD reaches the VDD turn-off voltage of 5 V, the current consumed by FSEZ1016A reduces to the startup current (maximum 10 µA) and the current supplied startup resistor charges the VDD capacitor. When VDD reaches the turn-on voltage of 16 V, FSEZ1016A resumes normal operation. In this manner, the auto-restart alternately enables and disables the switching of the MOSFET until the fault condition is eliminated (see Figure 29). VDS Over-Temperature Protection (OTP) A built-in temperature-sensing circuit shuts down PWM output if the junction temperature exceeds 140°C. Brownout Protection FSEZ1016A detects the line voltage using auxiliary winding voltage since the auxiliary winding voltage reflects the input voltage when the MOSFET is turned on. The VS pin is clamped at 1.15 V while the MOSFET is turned on and brownout protection is triggered if the current out of the VS pin is less than IVS-UVP (typical 180 μA) during the MOSFET conduction. Fault Occurs Power On Fault Removed Pulse-by-Pulse Current Limit When the sensing voltage across the current sense resistor exceeds the internal threshold of 1.3 V, the MOSFET is turned off for the remainder of the switching cycle. In normal operation, the pulse-by-pulse current limit is not triggered since the peak current is limited by the control loop. VDD 16V 5V Operating Current 3.5mA 10µA Normal Operation Fault Situation FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Protections Normal Operation Figure 29. Auto-Restart Operation © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 www.fairchildsemi.com 12 Application Fairchild Devices Input Voltage Range Output Offline LED Driver FSEZ1016A 90~265 VAC 12 V/0.35 A (4.2 W) Features High Efficiency (>74% at Full Load) Tight Output Regulation (CC:±5%) 18 80 78 14 77 12 Output Voltage (V) Efficiency (%) AC90V AC120V AC230V AC264V 16 79 76 75 74 10 8 6 73 4 72 2 71 70 0 90 120 150 180 210 240 270 0 Line Voltage (Vac) 50 100 150 200 250 Output current (mA) Figure 30. Measured Efficiency and Output Regulation 300 350 400 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Typical Application Circuit (Primary-Side Regulated Offline LED Driver) Figure 31. Schematic of Typical Application Circuit © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 www.fairchildsemi.com 13 FSEZ1016A — Primary-Side-Regulation PWM Integrated Power MOSFET Typical Application Circuit (Continued) Transformer Specification Core: EE16 Bobbin: EE16 Figure 32. Transformer Diagram Pin Specifications Primary-Side Inductance 2－1 1.95 mH ± 8% Primary-Side Effective Leakage 2－1 60 μH Maximum © 2009 Fairchild Semiconductor Corporation FSEZ1016A • Rev. 1.0.3 Remark 100 kHz, 1 V Short one of the secondary windings www.fairchildsemi.com 14 5.00 4.80 7 A 3.81 3.81 6 0.65TYP 5 B 1.75TYP 6.20 5.80 PIN #1 4.00 3.80 1 2 3 4 1.27 (0.33) 3.85 7.35 0.25 C B A TOP VIEW 1.27 LAND PATTERN RECOMMENDATION SEE DETAIL A 0.25 0.19 0.25 0.10 OPTION A - BEVEL EDGE C 1.75 MAX 0.51 0.33 FRONT VIEW 0.10 C OPTION B - NO BEVEL EDGE 0.50 0.25 R0.23 NOTES: GAGE PLANE R0.23 0.36 A) THIS PACKAGE DOES NOT FULLY CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.90 0.406 SEATING PLANE (1.04) DETAIL A SCALE: 2:1 C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) DRAWING FILENAME : M07Arev4. 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