ON MMBTA55LT3G Driver transistor Datasheet

MMBTA55LSeries,
MMBTA56LSeries,
SMMBTA56LSeries
Driver Transistors
PNP Silicon
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Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
SOT−23
CASE 318
STYLE 6
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO
Collector −Base Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO
Emitter −Base Voltage
VEBO
−4.0
Vdc
IC
−500
mAdc
Collector Current − Continuous
Vdc
−60
−80
1
BASE
2
EMITTER
Vdc
−60
−80
MARKING DIAGRAM
2xx M G
G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/C
556
C/W
300
2.4
mW
mW/C
RqJA
417
C/W
TJ, Tstg
−55 to +150
C
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
1
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1
Publication Order Number:
MMBTA55LT1/D
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
MMBTA55
MMBTA56, SMMBTA56
V(BR)CEO
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = −60 Vdc, IB = 0)
ICES
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
MMBTA55
(VCB = −80 Vdc, IE = 0)
MMBTA56, SMMBTA56
ICBO
Vdc
−60
−80
−
−
−4.0
−
−
−0.1
Vdc
mAdc
mAdc
−
−0.1
−
−0.1
100
100
−
−
−
−0.25
−
−1.2
50
−
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −100 mAdc, IB = −10 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = −100 mAdc, VCE = −1.0 Vdc)
VBE(on)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)
fT
MHz
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN-ON TIME
TURN-OFF TIME
VCC
-1.0 V
VCC
+VBB
+40 V
5.0 ms
100
+40 V
RL
100
RL
OUTPUT
+10 V
0
tr = 3.0 ns
OUTPUT
RB
Vin
* CS t 6.0 pF
5.0 mF
RB
Vin
* CS t 6.0 pF
5.0 mF
100
100
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
200
100
VCE = -2.0 V
TJ = 25C
TJ = 25C
70
50
100
C, CAPACITANCE (pF)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
70
50
Cibo
30
20
Cobo
10
30
7.0
20
-2.0 -3.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
IC, COLLECTOR CURRENT (mA)
5.0
-0.1 -0.2
-200
Figure 2. Current−Gain — Bandwidth Product
1.0 k
700
500
Figure 3. Capacitance
TJ = 125C
VCE = -1.0 V
ts
h FE, DC CURRENT GAIN
t, TIME (ns)
-50 -100
400
300
200
100
70
50
tf
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25C
30
20
10
-5.0 -7.0 -10
200
25C
-55C
100
80
60
tr
td @ VBE(off) = -0.5 V
-50 -70 -100
-200 -300
-20 -30
IC, COLLECTOR CURRENT (mA)
40
-0.5 -1.0 -2.0
-500
Figure 4. Switching Time
-500
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150C
25C
−55C
0.1
0.01
-50 -100 -200
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
-0.5 -1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
0.001
0.01
0.1
0.9
0.8 −55C
0.7
25C
0.6
0.5
0.4
0.3
0.2
1
IC/IB = 10
1.0
150C
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 7. Base Emitter Saturation Voltage vs.
Collector Current
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3
1
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.2
1.1
VCE = 1 V
1.0
0.9
−55C
0.8
0.7
25C
0.6
0.5
150C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
-1.0
TJ = 25C
-0.8
IC =
-100 mA
IC =
-50 mA
IC =
-250 mA
IC =
-500 mA
-0.6
-0.4
IC =
-10 mA
-0.2
0
-0.05 -0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 8. Base Emitter Voltage vs. Collector
Current
Figure 9. Collector Saturation Region
1
-0.8
IC, COLLECTOR CURRENT (A)
R qVB , TEMPERATURE COEFFICIENT (mV/ C)
VBE(on), BASE−EMITTER VOLTAGE (V)
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
-1.2
-1.6
RqVB for VBE
-2.0
-2.4
-2.8
-0.5 -1.0 -2.0
-10
-20
-50
-100 -200
-500
1 mS
1S
100 mS
10 mS
0.1
Thermal Limit
0.01
0.001
-5.0
-50
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 10. Base−Emitter Temperature
Coefficient
Figure 11. Safe Operating Area
ORDERING INFORMATION
Package Type
Shipping†
MMBTA55LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA55LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBTA56LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBTA56LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBTA56LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SMMBTA56LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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MMBTA55LT1/D