SavantIC Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD533/535/537 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD534 VCBO VCEO Collector-base voltage Collector-emitter voltage BD536 Open emitter- Emitter-base voltage -60 BD538 -80 BD534 -45 BD536 UNIT -45 Open base BD538 VEBO VALUE -60 V V -80 Open collector -5 V IC Collector current -8 A IE Emitter current -8 A IB Base current -1 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat-1 Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A VCEsat-2 Collector-emitter saturation voltage IC=-6 A;IB=-0.6 A Base-emitter on voltage IC=-2A ; VCE=-2V VBE ICBO ICES Collector cut-off current Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain BD534 VCB=-45V; IE=0 BD536 VCB=-60V; IE=0 BD538 VCB=-80V; IE=0 BD534 VCE=-45V; VBE=0 BD536 VCE=-60V; VBE=0 BD538 VCE=-80V; VBE=0 hFE-3 DC current gain (All device) hFE-4 fT DC current gain (All device) Transition frequency MAX UNIT -0.8 V -0.8 V -1.5 V -0.1 mA -0.1 mA -1 mA 20 IC=-10mA ; VCE=-5V BD538 DC current gain TYP. VEB=5V; IC=0 BD534/536 hFE-2 MIN 15 IC=-0.5A ; VCE=-2V Group: J 40 30 75 40 100 IC=-2A ; VCE=-2V Group: K Group: J 15 IC=-3A ; VCE=-2V Group: K 20 IC=-0.5A ; VCE=-1V 2 3 12 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD534/536/538