Jiangsu MBR1060 Schottky barrier rectifier Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
MBR1060,80,90,100
TO-220A
SCHOTTKY BARRIER RECTIFIER
1. CATHODE
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
2. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
IO
Value
Parameter
Unit
MBR1060
MBR1080
MBR1090
MBR10100
60
80
90
100
V
42
56
63
70
V
10
A
150
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IFSM
PD
RΘJA
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions
MBR1060
Reverse voltage
Reverse current
Forward voltage
www.cj-elec.com
V(BR)
IR
VF
Min
Typ
Max
Unit
60
MBR1080
IR=1mA
80
MBR1090
90
MBR10100
100
MBR1060
VR=60V
MBR1080
VR=80V
MBR1090
VR=90V
MBR10100
VR=100V
MBR1060
IF=10A
MBR1080-100
1
V
0.1
mA
0.8
V
0.84
V
C,Oct,2014
TO-220A Package Outline Dimensions
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
h
L
L1
L2
Φ
www.cj-elec.com
Dimensions In Millimeters
Min
Max
4.470
4.670
2.520
2.820
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010
10.310
8.500
8.900
12.060
12.460
2.540 TYP
4.980
5.180
2.590
2.890
0.000
0.300
13.400
13.800
3.560
3.960
1.000
3.735
3.935
2
Dimensions In Inches
Min
Max
0.176
0.184
0.099
0.111
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.394
0.406
0.335
0.350
0.475
0.491
0.100 TYP
0.196
0.204
0.102
0.114
0.000
0.012
0.528
0.543
0.140
0.156
0.039
0.147
0.155
C,Oct,2014
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