BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318 SOT−23 STYLE 11 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range MARKING DIAGRAM A7 MG G 1 A THERMAL CHARACTERISTICS CATHODE 2 3 CATHODE/ANODE A7 = Device Code M = Date Code* G = Pb−Free Package 2.0 1.0 0.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic ANODE 1 (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −65 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. Package Shipping† BAV99LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAV99LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device BAV99LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SBAV99LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 9 1 Publication Order Number: BAV99LT1/D BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Reverse Breakdown Voltage, (I(BR) = 100 mA) V(BR) Reverse Voltage Leakage Current, (VR = 100 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance, (VR = 0, f = 1.0 MHz) CD Forward Voltage, (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time, (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W trr Forward Recovery Voltage, (IF = 10 mA, tr = 20 ns) VFR Min Max 100 − − − − 2.5 30 50 − 1.5 − − − − 715 855 1000 1250 − 6.0 − 1.75 Unit Vdc mAdc pF mVdc ns V CURVES APPLICABLE TO EACH DIODE 100 IR, REVERSE CURRENT (mA) 100 TA = 150°C TA = 125°C TA = 85°C 10 TA = 55°C TA = 25°C 1 TA = −40°C 0.1 TA = −55°C 0 TA = 150°C 10 TA = 125°C 1.0 TA = 85°C TA = 55°C 0.1 0.01 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TA = 25°C 0 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 0.61 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 0.59 0.57 0.55 0.53 0.51 0.49 0.47 0.45 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance http://onsemi.com 2 7 8 60 70 BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE q 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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