High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC90 TC = 90°C 32 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load PC TC = 25°C ICM = 90 @ 0.8 VCES A 350 W TO-268 (IXGT) G E G -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 300 °C 260 °C z z z Md Mounting torque (M3) 1.13/10Nm/lb.in. Weight TO-247 AD TO-268 6 4 g g C (TAB) TO-247 AD (IXGH) G = Gate, E = Emitter, TJ = 1700 V = 75 A = 3.3 V = 250 ns z z C (TAB) C E C = Collector, TAB = Collector International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. z z z z = 250 µA, VGE = 0 V = 250 µA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2003 IXYS All rights reserved 1700 3.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 2.5 3.0 5.0 V V 50 1 µA mA ±100 nA 3.3 V V z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98941B(11/03) IXGH 32N170 IXGT 32N170 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(ON) VGE = 10V, VCE = 10V 30 S 120 A 3500 pF 165 pF Cres 40 pF Qg 155 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 22 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V VCE = 0.6 VCES, RG = Roff = 2.7 Ω 30 nC 51 nC 45 ns 38 ns 270 500 ns tfi 250 500 ns Eoff 11 20 mJ 48 ns 42 ns 6.0 mJ 360 ns tfi 560 ns Eoff 14 mJ td(on) tri Eon td(off) Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.6 VCES, RG = Roff = 2.7 Ω RthJC RthCK TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.35 K/W (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 32N170 IXGT 32N170 Fig. 1. Output Characte ristics @ 25 Deg. C 64 240 VGE = 17V 15V 13V 11V 56 48 VGE = 17V 13V 180 9V 40 32 24 16 150 11V 120 90 9V 60 7V 30 8 0 7V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 48 4 6 8 V C E - Volts 10 12 14 1.8 VGE = 17V 15V 13V 11V 56 2 Fig. 4. De pende nce of V CE(sat) on Tem perature V GE = 15V 1.6 9V V C E (sat)- Normalized 64 I C - Amperes 15V 210 I C - Amperes I C - Amperes Fig. 2. Extended Output Characte ristics @ 25 de g. C 40 32 24 7V 16 I C = 64A 1.4 1.2 I C = 32A 1 0.8 8 0 I C = 16A 0.6 0 1 2 3 4 5 6 -50 -25 0 V CE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage Fig. 6. Input Adm ittance 8 100 90 TJ = 25ºC 7 80 I C - Amperes VC E - Volts 6 5 I C = 64A 4 60 50 40 30 32A 3 70 TJ = 125ºC 25ºC -40ºC 20 2 16A 10 1 0 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 5 6 7 8 V G E - Volts 9 10 IXGH 32N170 IXGT 32N170 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 25 45 40 30 E off - milliJoules TJ = -40ºC 25ºC 125ºC 35 g f s - Siemens TJ = 125ºC VGE = 15V VCE = 1020V 23 25 20 15 I C = 64A 21 19 17 I C = 32A 15 10 13 5 0 I C = 16A 11 0 16 32 48 64 80 96 0 10 20 I C - Amperes 22 50 22 R G = 3Ω R G = 15Ω - - - - VGE = 15V VCE = 1020V 18 20 R G = 3Ω R G = 15Ω - - - - - 18 VGE = 15V VCE = 1020V TJ = 125ºC E off - milliJoules 20 E off - MilliJoules 40 Fig. 10. Dependence of Eoff on Tem perature Fig. 9. Dependence of Eoff on Ic 16 14 TJ = 25ºC 12 10 I C = 64A 16 14 I C = 32A 12 I C = 16A 10 8 8 16 24 32 40 48 56 64 25 35 I C - Amperes 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 12. Capacitance Fig. 11. Gate Charge 15 10000 f = 1 MHz VCE = 850V IC = 32A IG= 10mA Capacitance - p F 12 VG E - Volts 30 R G - Ohms 9 6 C ies 1000 C oes 100 C res 3 0 10 0 30 60 90 120 150 Q G - nanoCoulombs 0 5 10 15 20 25 V C E - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 32N170 IXGT 32N170 Fig. 1 3 . M a x im um Tra ns ie nt The r m a l Re s is ta nc e 0.4 R (th) J C - (ºC/W) 0.3 0.2 0.1 0 1 © 2003 IXYS All rights reserved 10 Puls e W idth - millis ec onds 1 00 10 0 0