Fairchild FDBS09H04A F085A Smart high side switch Datasheet

FDBS09H04A_F085A/FDPS09H04A_F085A
Smart High Side Switch
Features
Description
• Short circuit protection with latch
N channel power FET with charge pump, current controlled
input and diagnostic feedback with load current sense, integrated in Smart Trench chip on chip technology. Provides
embedded protective functions.
• Current limitation
• Overload protection
• Thermal shutdown with restart
TO263-7L
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of supply protection (with external diode for charged
inductive load)
1
• Very low standby current
7
• Fast demagnetization of inductive loads
TO220-7L
• ESD protection
• Optimized static electromagnetic compatibility
• Diagnostic function - Proportional load current sense (with
defined fault signal in case of overload operation, over temperature shutdown and/or short circuit shutdown)
• Qualified to AEC
Typical Applications
• Power switch with current sense diagnostic feedback for DC
grounded loads
• All types of resistive, inductive, and capacitive loads
• Replace electromechanical relays, fuses and discrete circuits
Ordering Information
Part Number
Package
Operating
Temperature
FDBS09H04A_F085A
TO263-7L
-40 C - 150 C
Eco Status
RoHS
Packing Method
Tape & Reel
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
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April 2012
Rbb
Charge
Pump
Voltage
Source
Current
Limit
Vbb
4
Gate
Protection
1
High-side Driver
OUT 2
6
7
SCIS
Input / Output
IN ESD & OVP
3
Protection
5
UVLO
&
Control
Logic
IS
Temp.
Sense
Current
Sense
Overload
Detection
Output Voltage
Detection
Pin Definitions
Pin Number
Pin Name
I/O
1
OUT
A
Output to loads; Pins 1, 2, 6 and 7 must be externally shorted
2
OUT
A
Output to loads; Pins 1, 2, 6 and 7 must be externally shorted
3
IN
A
Input; Activates the power switch if shorted to ground
4
Vbb
P
Supply Voltage; Pin 4 and tab are internally shorted
5
IS
A
Sense Output, Diagnostic feedback; Provides at normal operation a sense
current proportional to the load current; in case of overload, over temperature and/or short circuit a defined current is provided
6
OUT
A
Output to loads; Pins 1, 2, 6 and 7 must be externally shorted
7
OUT
A
Output to loads; Pins 1, 2, 6 and 7 must be externally shorted
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Pin Function Description
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Block Diagram
At Tj=25C unless otherwise specified.
Parameter
Symbol
Values
Unit
Supply voltage
Vbb
38
V
Supply voltage for full short circuit protection 1)
Vbb
30
V
VLoadDump 2)
45
V
Load dump protection VLoadDump = UA + VS, UA=13.5V
RI=2, RL=1, td=400ms, IN=Low or High
IL
Self-limited
A
Tj
Tstg
-40 - 150
-55 - 150
C
C
Ptot
81
W
EAS
388
mJ
Load current (short-circuit current)
Operating temperature range
Storage temperature range
Power Dissipation (DC)
3)
Inductive load switch-off energy dissipation
Single pulse, IL=12.5A, L=5mH, Vbb=12V, Tj=150C
Electrostatic discharge capability (ESD)
(Human Body Model)
IS
VESD
2
KV
IN
VESD
2
KV
VBB, Output
VESD
5
KV
IIN
IIS
+15, -120
+15, -120
mA
dVbIN / dt
self-limited
20
V/us
Current through input pin (DC)
Current through current sense pin (DC)
Input voltage slew rate Vbb <= 16V
Input voltage slew rate Vbb > 16V 4)
Notes:
1) Short circuit is defined as a combination of remaining resistances and inductances. See schematic on page11.
2) VLoad dump is setup without the DUT connected to the generator.
3) See also diagram on page 11.
4) See also on page 7. Slew rate limitation can be achieved by means of using a series resistor RIN in the input path. This resistor is also required for reverse operation. See also
page 10.
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Absolute Maximum Ratings
At Tj=25C, Vbb=12V unless otherwise specified.
Parameter
Symbol
Conditions
RthJC 5)
RthJA
(junction to case)
(junction to ambient)
device on PCB 6), SMD version only
Min. Typ. Max. Unit
Thermal Characteristics
Thermal resistance
-
0.6
70
35
0.8
45
K/W
Load Switching Capability and Characteristics
On-state resistance
(pin 3 to pins 1, 2, 6, 7)
RON
VIN=0, Vbb=5.5V, IL=10A, Tj=25C
VIN=0, Vbb=5.5V, IL=10A, Tj=150C
VIN=0, Vbb=12V, IL=10A, Tj=25C
VIN=0, Vbb=12V, IL=10A, Tj=150C
-
5.5
10
5.5
10
9
15
9
15
m
VON(NL)
Tj=-40 - 150C
-
35
65
mV
IL(ISO)
ISO Proposal7): VON<=0.5V, TC=85C,
Tj<=150C
SMD 6) 7): VON<= 0.5V,
Ta=85C, Tj<=150C
38
48
-
A
12
14
-
ton
toff
RL=2.2Tj = -40 - 150C
-
180
150
400
500
us
Slew rate on (25% to 50% VOUT)
dV / dton
RL=2.2Tj = -40 - 150C
-
0.2
0.45
V/us
Slew rate off (50% to 25% VOUT)
-dV / dtoff
RL=2.2Tj = -40 - 150C
-
0.2
0.55
V/us
Vbb(ON)
Tj = -40 - 150C
5.5
38
V
1.5
3.5
V
3.7
5.5
V
Output voltage drop limitation at small
load currents (tab to pins 1, 2, 6, 7)
Nominal load current (tab to pins 1, 5)
IL(NOM)
Turn-on time (to 90% VOUT)
Turn-off time (to 10% VOUT)
Operating Parameters
Operating Voltage (VIN=0)
8)
Under voltage shutdown
Under voltage restart of charge pump
Over voltage protection
9)
Vbb(u)
-
Vbb(ucp)
VZ,IN
Ibb=15mA, Tj = -40 - 150C
42.5
47.3
-
V
Ibb(off)
IIN=0, Tj = -40 - 120C
IIN=0, Tj = 150C
-
0.8
8
5.3
20
uA
-Vbb
IL=-10A, RIS=1K
-
-
18
V
On-state resistance
(pin 4, tab to pins 1, 2, 6, 7) 8)
RON(REV)
Vbb=-8V, VIN=0, IL=-10A, RIS=1KTj=25C
Vbb=-8V, VIN=0, IL=-10A, RIS=1KTj=150C
Vbb=-12V, VIN=0, IL=-10A, RIS=1KTj=25C
Vbb=-12V, VIN=0, IL=-10A, RIS=1KTj=150C
-
6.1
13
6.1
10
13
18
11.5
17
m
Integrated resistor in Vbb line
Rbb
Is=1mA, VIN=5V @ Tj =125C
65
85
110

-VON(inv)
IL=-10A, RIS=1KTj=25C
IL=-10A, RIS=1K Tj=150C
-
800
600
-
mV
td(inv)
IL> 0A 8) VIN(inv)=VIN(fwd)=0V
-
1
-
ms
Standby current
Reverse Battery 10)
Reverse battery voltage
Inverse operation
11)
Output voltage drop
(pin 4, tab to pins 1, 2, 6, 7) 8)
Turn-on delay after inverse operation
Notes:
5) Thermal resistance RthCH case to heatsink (about 0.5... 0.9 K/W with silicone paste) not included!
6) Device on 76.2mm * 114mm * 1.57mm glass epoxy PCB. Still air conditions.
7) Not subject to production test, Parameters are calculated from Ron and Rthjc or Rthja.
8) Not subject to production test, specified by design.
9) See also VON(CL) in circuit diagram page 8.
10) For operation at voltages higher then |16V| please see required schematic on page 9.
11) Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS. In this case the device switches on with a time delay td(inv) after
the transition from inverse to forward mode.
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Electrical Characteristics
At Tj=25C, Vbb=12V unless otherwise specified
Parameter
Symbol
Conditions
Short circuit current limit (pin 4, tab to pins
1, 2, 6, 7) at VON=6V 13) 14)
IL6(SC)
Tj=-40C
Tj=25C
Tj=150C
85
130
120
110
160
-
A
Short circuit current limit (pin 4, tab to pins
1, 2, 6, 7) at VON=12V13)
IL12(SC)
Tj=-40C
Tj=25C
Tj=150C
55
93
85
73
125
-
A
Short circuit current limit (pin 4, tab to pins
1, 2, 6, 7) at VON=18V 13) 14)
IL18(SC)
Tj=-40C
Tj=25C
Tj=150C
41
75
68
61
100
-
A
Short circuit current limit (pin 4, tab to pins
1, 2, 6, 7) at VON=24V13)
IL24(SC)
Tj=-40C
Tj=25C
Tj=150C
20
53
47
41
75
-
A
Short circuit current limit (pin 4, tab to pins
1, 2, 6, 7) at VON=30V 13)
IL30(SC)
Tj=-40C
Tj=25C
Tj=150C
18
34
31
28
50
--
A
Short circuit shutdown detection voltage
VON(SC)
2.5
3.5
4.5
V
Short circuit shutdown delay after input
current positive slope
td(SC1)
VON > VON(SC), Tj=-40 ~ 150C
370
520
700
us
VON(CL)
IL=40mA
38.5
41.5
-
V
Tjt
165
178
-
C
Tjt
-
10
-
K
Protection Functions
Min. Typ. Max. Unit
12)
14)
Min. value valid only if “off-signal” time exceeds 30us
Output clamp(inductive load switch off) at
VOUT= Vbb-VON(CL)(overvoltage) 15)
Thermal overload trip temperature14)
Thermal hysteresis14)
Notes:
12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
13) Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figures 3.x on page 14 and 15.
14) Not subject to production test, specified by design.
15) See also Figure 2b on page 14.
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Electrical Characteristics
At Tj=25C, Vbb=12V unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Diagnostic Characteristics
Current sense ratio, static on-condition
KILIS =IL: IIS < IIS,min 16)
VIS < VOUT-5V, VbIN > 4.5V
11000
11000
11000
9300
10500
11000
7800
8200
8000
5800
7700
8100
-
13200
13200
13275
13250
13000
13000
12900
13100
13400
13450
12500
13000
13700
15000
15000
15000
18000
17000
16000
18200
18500
18850
17900
18500
19200
-
-
IL=35A, Tj=-40C
IL=35A, Tj=25C
IL=35A, Tj=125C
IL=15A, Tj=-40C
IL=15A, Tj=25C
IL=15A, Tj=125C
IL=2.5A, Tj=-40C
IL=2.5A, Tj=25C
IL=2.5A, Tj=125C
IL=0.5A, Tj=-40C
IL=0.5A, Tj=25C
IL=0.5A, Tj=125C
IIS,fault
VON > 1V, typ Tj = -40 - 150C
3.5
5.2
7.5
mA
KILIS
IIN=0(e.g. during deenergizing of induc-
tive loads)
Sense current under fault conditions17)
Sense saturation current
Fault-sense signal delay after input
current positive slope
Current sense leakage current
IIS,lim
VON < 1V, typ Tj = -40 - 150C
3.5
5.8
8.5
mA
tdelay(fault)
VON > 1V, typ Tj = -40 - 150C
350
500
650
us
IIS(LL)
IIN = 0
-
0
0.5
uA
Current sense offset current
IIS(LH)
VIN = 0, IL <= 0
-
0
1
uA
Minimum load current for sense
functionality
IL(MIN)
VIN = 0, Tj = -40 - 150C
70
-
-
mA
Current sense settling time to IISstatic
after input current positive slope18)
tson(IS)
IL = 0 --> 20A, Tj = -40 - 150C
-
300
650
us
Current sense settling timeduring on
condition 18)
tslc(IS)
IL =10 --> 20A ,Tj=-40 ~ 150C
-
50
100
us
Overvoltage protection
VZ,IS
Ibb = 15mA, Tj = -40 - 150C
42.5
47.3
-
V
Required current capability of input
switch
IIN(on)
Tj = -40 - 150C
-
1.5
3.0
mA
Input current for turn-off
IIN(off)
Tj = -40 - 150C
-
-
15
uA
Input
Notes:
16) See also Figures 4.x and 6.x on page 15 and 16.
17) Fault conditions are overload during on (i.e. VON>1V typ.), over temperature and short circuit; see also truth table on page 7.
18) Not subject to production test, specified by design.
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Electrical Characteristics
FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
Application Information
1. Truth Table
Sense current under fault conditions
Output Level
Current Sense
Normal operation
Input Current Level
L
H
L
H
 0 (IIS(LL))
nominal
Overload 19)
L
H
L
H
 0 (IIS(LL))
IIS,fault
Short circuit to GND 20)
L
H
L
L
 0 (IIS(LL))
IIS,fault
Over temperature
L
H
L
L
 0 (IIS(LL))
IIS,fault
Short circuit to Vbb
L
H
H
H
 0 (IIS(LL))
< nominal 21)
Open load
L
H
Z
H
 0 (IIS(LL))
 0 (IIS(LH))
L = “ Low “ Level, Z = High impedance, potential depends on external circuit, H = “HIGH” Level
2.Terms
Ibb
VON
VbIN
4
VbIS
V bb
Vbb
3
IN
OUT
IL
1,2,6,7
IS
R IN
IIN
IIS
VOUT
VIN
5
VIS
R IS
Notes:
19) Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.). See also page 10.
20) Short Circuit is detected at the following condition: VON > 3.5V (typ.). See also page 11.
21) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
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3.1 Input circuit (ESD protection)
Vbb
VZ,IN
VbIN
ZD
Rbb
VIN
IIN
ESD zener diode: 47.3V typ., max 15mA
3.2 Current sense output
Vbb
Rbb
VZ,IS
IIS,fault
IS
IIS
VIS
RIS
VZ,IS = 47.3V ( typ.), RIS = 1K nominal (or 1K /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as VOUT - VIS > 5V. Therefore RIS should be less than
Vbb
– 5V------------------------8.5mA
Note: For large values of RIS the voltage VIS can reach almost Vbb. See also over voltage protection. If you don't use the current
sense output in your application, you can leave it open.
3.3 Inductive and over voltage output clamp
Vbb
VZ1
VON
OUT
VON is clamped to VON(CL) = 41.5V typical
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3. Detailed Function Blocks
Vbb
VZ,IN VZ,IS
Rbb
RIN
Logic
IN
OUT
IS
RV
RIS
VZ,VIS
Rbb = 85 typ., VZ,IN = VZ,IS = 47.3V typ., RIS = 1K nominal. Note that when over voltage exceeds 47.3V typ. a voltage above 5V
can occur between IS and GND, if RV, VZ,VIS are not used.
3.5 Reverse battery protection
Vbb
Rbb
RIN
IN
Logic
OUT
IS
RL
RIS
RIS typ. 1K Add RIN for reverse battery protection in application with Vbb above 16V;
1 - ------1
0.082A
-------+ -  --------------------------R IN R is V bb – 9V
To minimize power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 82mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by properly
adjusting the current through RIS. Since the current via Rbb generates additional heat in the device, this has to be taken into account
in the overall thermal consideration.
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3.4 Overvoltage protection of logic part
Vbb
+
OUT
Vbb
-
IN
-IL
IS
VOUT
IIS
+
=
VIS
VIN
-
RIS
The device can be operated in inverse load current mode (VOUT > Vbb > 0V). The current sense feature is not available during this
kind of operation (IIS = 0). In case of inverse operation the intrinsic drain source diode is eventually conducting resulting in considerably increased power dissipation. The transition from inverse to forward mode can result in a delayed switch on.
Note: Temperature protection during inverse load current operation is not possible!
3.7 Vbb disconnect with energized inductive load
Vbb
IN
OUT
VD
Vbb
IS
VZL
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor(VZL+ VD < 38V if RIN = 0). For higher
clamp voltages currents at IN and IS have to be limited to 120 mA.
3.8 Overload detection
Vbb
VON
Detection
Logic
OUT
Fault Condition: VON > 1V typ.
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3.6 Inverse load current operation
FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
3.9 Short circuit
Vbb
5uH
IN
OUT
10mohm
LSC
IS
Vbb
=
IIN
-iL(t)
RSC
SC
RIS
ZL
Fault Condition: VON > VON(SC) (3.5V typ.) and t > td(SC) (typ. 650us)
Short circuit is a combination of primary and secondary impedances and resistances.
3.10 Inductive load switch-off energy dissipation
Ebb
EAS
ELoad
Vbb
Vbb
IN
=
-iL(t)
OUT
EL
IS
L
{R
ZL
RIS
IIN
L
ER
Energy stored in load inductance:
EL = 1  2  L  IL
2
While demagnetizing load inductance, the energy dissipated in MOSFET is
E AS = E bb + E L – E R =
 VON  CL   iL  t dt
with an approximate solution for RL > 0 Vout(CL) = VoN(CL) - Vbb:
IL  L
IL  RL
E AS = ---------------  V ON  CL   ln  1 + -----------------------------

2  RL
V OUT  CL  
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3.11 Maximum allowable load inductance for a single switch off
L=f(IL); Tj = 150C, Vbb=12V, RL = 0
1000
L[mH]
100
10
1
0.1
0.01
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VBB
Control
IN
Rin
IS
Diagnosis
OUT
Ris
M
Vbb
Rbb
*1
RIN
1K
On
Off
Output
*3
R1
4
IN
Bat
OUT
3
100
C
1,2,6,7
IS
5
R2
R3
MCU
*2
R4
3K
Load
ADC
*1
5.1V
RIS
1K
1) Ris and Rin is recommended as 1k
2) Put diode or capacitor between load to protect device or to remove noise.
3) For reverse battery protection function, R1 should be used less than 120at -18V.
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Typical Application Circuit
IIN
IIN
VOUT
VOUT
90%
ton
dV/dtoff
dV/dton
toff
10%
IL
IL
Load1
Tslc(IS)
Load2
IIs
IIs
t
Tson(IS)
t
Tsoff(IS)
Figure 2a. Switching motors and lamps
As long as VbIS < VZ,IS the sense current will never
exceed IIS,fault and/or IIS,lim
Figure 1a. Switching a resistive load,
change of load current in ON-condition
The sense signal is not valid during a settling time
after turn-on/off and after change of load current
IIN
IL(SC)
[A]
120
100
VOUT
80
VON(CL)
60
40
IL
20
VON
IIs
0
t
Figure 2b. Switching an inductive load
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20
30
[V]
Figure 3a. Typical current limitation characteristic
In case of VON > VON(SC)(typ.3.5V) the device will
be switched off by internal short circuit detection
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FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
Timing Diagrams
IL
IL
VON > VON(SC)
Td(SC2)
td(SC1)
VON
tm
IIs
1V typ
IIS,fault
tdelay(fault)
tdealy(fault)
t
IIs
Figure 3b. Short circuit type one:
shut down by short circuit detection, reset by IIN=0
IIS,fault
IL/KiLiS
t
Shut down remains latched until next reset via input
Figure 3c. Short circuit type two:
shut down by short circuit detection, reset by IIN=0
IIN
IIN
IIS
VOUT
IIS,fault
IL
Vbb-VOUT
Auto
Restart
VON=1V typ.
RON*IL,lim
Is
Tj
t
t
IL/kilis
Figure 4a. Over temperature Reset if Tj < Tjt
©2011 Fairchild Semiconductor Corporation
FDBS09H04A_F085A/FDPS09H04A_F085A
IIS,lim
IIS,fault
Figure 4b. Overload Reset if Tj < Tjt
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FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
IIN
IIN
IIS
4
IIS,Lim
VIN = 0
3
VON(CL)
Dynamic,short
Undervoltage
not below
2
IL,Lim
VbIN(u)
1
IL(min)
IIN = 0
IIS(LH)
Vbb
0
VbIN(u) Vbb(ucp)
VON(CL)
0
Figure 5. Under voltage restart of charge pump and
over voltage clamp
10
IL
20
30
40
50 [A]
Figure 6a. Current sense versus load current
[V]
0.1
VON
kLILIS
30000
0.05
20000
10000
IL
0
5
10
15
20
25
30
IL
[A]
2
FDBS09H04A_F085A/FDPS09H04A_F085A
6
8
10
12
14
[A]
Figure 7. Output voltage drop versus load current
Figure 6b. Current sense ratio
©2011 Fairchild Semiconductor Corporation
4
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FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
[mA]
VOUT
FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
Package Dimensions
©2011 Fairchild Semiconductor Corporation
FDBS09H04A_F085A/FDPS09H04A_F085A
17
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FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
©2011 Fairchild Semiconductor Corporation
FDBS09H04A_F085A/FDPS09H04A_F085A
18
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FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch
©2011 Fairchild Semiconductor Corporation
FDBS09H04A_F085A/FDPS09H04A_F085A
19
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