-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors) DTB743EE / DTB743EM zDimensions (Unit : mm) DTB743EE 0.55 0.3 (3) 0.8 (2) (1) 0.2 0.2 0.15 0.5 0.5 EMT3 JEITA No. (SC-75A) JEDEC No. <SOT-416> 0.1Min. zFeature 1. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 4. Only the on / off conditions need to be set for operation, making the device design easy. 0.7 1.6 1.6 zApplications Inverter, Interface, Driver 1.0 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : M13 1.2 0.32 0.8 1.2 (3) zPackaging specifications Part No. 0.13 0.5 0.8 Package EMT3 VMT3 Packaging type Taping Taping TL T2L 3000 8000 Basic ordering unit (pieces) (1)(2) 0.4 0.4 0.2 0.22 Code 0.2 DTB743EM zStructure PNP epitaxial plannar silicon transistor (Resistor built-in type) (1) IN (2) GND (3) OUT VMT3 Each lead has same dimensions Abbreviated symbol : M13 − DTB743EE − DTB743EM zAbsolute maximum ratings (Ta=25°C) Symbol Parameter Supply voltage Limits DTB743EE DTB743EM VCC −30 zInner circuit Unit VIN −20 to +10 V Collector current ∗1 IC (max) −200 mA Power dissipation ∗2 PD 150 mW Input voltage OUT R1 V IN R2 GND(+) Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C OUT IN ∗1 Characteristics of built-in transistor. ∗2 Each terminal mounted on a recommended land. GND(+) R1=4.7kΩ / R2=4.7kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.05 - Rev.B DTB743EE / DTB743EM Data Sheet zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. VI(off) − − −0.5 VI(on) −2.5 − − VO(on) − −70 −300 mV IO/II= −50mA / −2.5mA II − − −1.4 mA VI= −5V IO(off) − − −500 nA VCC= −30V, VI=0V DC current gain GI 115 − − − Transition frequency ∗ fT − 260 − MHz Input resistance R1 3.29 4.7 6.11 kΩ − Resistance ratio R2/R1 0.8 1.0 1.2 − − Parameter Input voltage Output voltage Input current Output current Unit V Conditions VCC= − 5V, IO= −100µA VO= −0.3V, IO= −20mA VO= −2V, IO= −100mA VCE= −10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor. zElectrical characteristics curves 100 100 VCC = -5V 10 OUTPUT CURRENT : I O (mA) INPUT VOLTAGE : V I (on) (V) Ta= －40°C 25°C 85°C 125°C 1 V0 = -0.3V 0.1 0.1 1 10 100 10 Ta=125°C 85°C 1 25°C －40°C 0.1 0 1000 1 OUTPUT CURRENT : IO (mA) Ta=125°C 85°C 100 25°C －40°C 10 1 0.1 1 VO= -2V OUTPUT VOLTAGE : VO(on) (V) DC CURENT GAIN : GI 1000 2 3 INPUT VOLTAGE : VI(off) (V) IO/II=20 Ta=125°C 85°C 25°C －40°C 0.1 0.01 1 10 100 OUTPUT CURENT : IO (mA) 1000 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1 10 100 1000 OUOPUT CURRENT : IO (mA) 2/2 2009.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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