Foshan BRU20N90 N-channel mosfet in a to-3p plastic package Datasheet

BRU20N90
Rev.D Nov.-2015
描述
/
DATA SHEET
Descriptions
TO-3P 塑封封装 N 沟 MOS 场效应管。N-Channel MOSFET in a TO-3P Plastic Package.

特征
/ Features
低栅极电荷,开关速度快,雪崩能量高,dv/dt 能力强。
Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability.

用途
/
Applications
用于高电压、高速功率开关应用,如高效率开关模电源、功率因数校正。
Designed for high voltage, high speed power switching applications such as high efficiency switched
mode power supplies, active power factor correction.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
PIN1:Gate
放大及印章代码
PIN 2:Drain
PIN 3:Source
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BRU20N90
Rev.D Nov.-2015
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-to-Source Breakdown Voltage
符号
Symbol
VDSS
数值
Rating
900
单位
Unit
V
Continuous Drain Current
ID(Tc=25℃)
20
A
Continuous Drain Current
ID(Tc=100℃)
13
A
IDM
80
A
Gate-to-Source Voltage
VGSS
±30
V
Repetitive Avalanche Energy
EAR
100
mJ
Single Pulse Avalanche Energy
EAS
1000
mJ
Peak Diode Recovery dv/dt
dv/dt
5
V/ns
250
W
Junction Temperature Range
PD(Tc=25℃)
Tj
150
℃
Storage Temperature Range
Tstg
-55~150
℃
Thermal Resistance Junction-Ambient
RθJA
40
℃/W
Thermal Resistance Junction-Case
RθJC
0.5
℃/W
Drain Current Pulsed
Power Dissipation
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Drain-to-Source Breakdown
Voltage
Drain-to-Source Leakage
Current
Gate-to-Source Forward
Leakage
Gate Threshold Voltage
Static Drain-to-Source
On-Resistance
Diode Forward Voltage
符号
Symbol
ID=250μA
VDS=900V
VGS=0V
25
VDS=720V
TC=125℃
250
VGS=±20V
VDS=0V
±10
μA
VGS(th)
VDS=VGS
ID=250μA
4.0
V
RDS(on)
VGS=10V
ID=10A
0.4
Ω
VSD
VGS=0V
ISD=20A
1.5
V
VDS=25V
f=1.0MHz
VGS=0V
IDSS
IGSS
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-Off Delay Time
Fall Time
Total Gate Charge
tr
td(off)
Qgs
Gate-Drain Charge
Qgd
900
V
2.0
0.31
μA
9140
504
pF
63.5
22
VDD=300V
VGS=10V
ID=20A
RG=4.7Ω
tf
Qg
Gate-Source Charge
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最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VGS=0V
VDSS
Input Capacitance
Rise Time
测试条件
Test Conditions
42
153
ns
97
162
VDS=300V
VGS=10V
ID=20A
22
nC
59
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BRU20N90
Rev.D Nov.-2015
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BRU20N90
Rev.D Nov.-2015
外形尺寸图
DATA SHEET
/ Package Dimensions
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BRU20N90
Rev.D Nov.-2015
印章说明
/
DATA SHEET
Marking Instructions
BR
20N90
****
说明:
BR: 

为公司代码
20N90: 
为型号代码
****:
为生产批号代码,随生产批号变化。

Note:
BR:
20N90:
****:
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Company Code.

Product Type.
Lot No. Code, code change with Lot No.
5/6
BRU20N90
Rev.D Nov.-2015
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
使用说明
Temp:270±5℃
Time:10±1 sec
/ Packaging SPEC.
套管包装
TO-3P
时间:10±1 sec.
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
30
15
450
5
2250
497.5×46×8
555×164×50
575×290×180
/ Notices
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