BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit 6 1 Continuous Reverse Voltage VR 75 V 4 3 Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Rating Peak Forward Surge Current Pulse Width = 10 ms 6 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C 1 Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Derate above 25°C °C/W Characteristic (Both Junctions Heated) Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW Thermal Resistance Junction-to-Ambient Junction and Storage Temperature SOT−563 CASE 463A PLASTIC A6 MG G 350 (Note 1) Derate above 25°C 3 MARKING DIAGRAM RqJA TA = 25°C 2 mW/°C Thermal Resistance Junction-to-Ambient Total Device Dissipation 54 mW/°C RqJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad A6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BAS16DXV6T1 SOT−563 4 mm pitch 4000/Tape & Reel BAS16DXV6T1G SOT−563 (Pb−Free) 4 mm pitch 4000/Tape & Reel BAS16DXV6T5 SOT−563 2 mm pitch 8000/Tape & Reel BAS16DXV6T5G SOT−563 (Pb−Free) 2 mm pitch 8000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 2 1 Publication Order Number: BAS16DXV6/D BAS16DXV6T1, BAS16DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − − − 715 855 1000 1250 − − − 1.0 50 30 CD − 2.0 pF trr − 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) QS − 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) http://onsemi.com 2 Unit mV mA BAS16DXV6T1, BAS16DXV6T5 1 ns MAX 10% DUT 500 W t trr tif 50 W DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R . 10 MW C 3 7 pF VC 500 W DUT VCM 20 ns MAX D1 t 10% Qa VCM + C 243 pF 100 KW DUTY CYCLE = 2% t 90% Vf BAW62 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 1 KW V 450 W 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3 50 W BAS16DXV6T1, BAS16DXV6T5 10 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 5. Leakage Current CD, DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 4 10 100 1000 BAS16DXV6T1, BAS16DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 2 A L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 5 PL 6 0.08 (0.003) DIM A b C D E e L HE HE M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 STYLE 10: PIN 1. CATHODE 1 2. N/C 3. CATHODE 2 4. ANODE 2 5. N/C 6. ANODE 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 BAS16DXV6T1, BAS16DXV6T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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