SeCoS BAT54TW Surface mount schottky barrier diode array Datasheet

BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Elektronische Bauelemente
Surface Mount Schottky Barrier Diode Array
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
·
·
·
SOT-363
Low Turn-on Voltage
A
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
B C
MECHANICAL DATA
·
·
·
·
·
H
Case: SOT-363, Molded Plastic
K
Terminals: Solderable per MIL-STD-202,
Method 208
J
Polarity: See Diagrams Below
Weight: 0.016 grams (approx.)
D
L
F
4
Mounting Position: Any
5
6
O
1
BAT54TW Marking: KLA
M
BAT54ADW Marking: KL6
2
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
0.40
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
3
BAT54CDW Marking: KL7
BAT54SDW Marking: KL8
BAT54BRW Marking:KLB
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
TJ
125 Max
°C
Tstg
– 55 to +150
°C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
—
—
Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
7.6
10
pF
Reverse Leakage (VR = 25 V)
IR
—
0.5
2.0
µAdc
Forward Voltage (IF = 0.1 mAdc)
VF
—
0.22
0.24
Vdc
Forward Voltage (IF = 30 mAdc)
VF
—
0.41
0.5
Vdc
Forward Voltage (IF = 100 mAdc)
VF
—
0.52
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
—
—
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
VF
—
0.29
0.32
Vdc
Forward Voltage (IF = 10 mAdc)
VF
—
0.35
0.40
Vdc
Reverse Breakdown Voltage (IR = 10 µA)
Forward Current (DC)
IF
—
—
200
mAdc
Repetitive Peak Forward Current
IFRM
—
—
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFSM
—
—
600
mAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
BAT54TW / BAT54ADW /BAT54CDW
BAT54SDW/ BAT54BRW
Elektronische Bauelemente
Surface Mount Schottky Barrier Diode Array
820 Ω
+10 V
2k
0.1 µF
tr
IF
100 µH
0.1 µF
tp
IF
t
trr
10%
t
DUT
50 Ω Οutput
Pulse
Generator
50 Ω Input
Sampling
Oscilloscope
90%
IR(REC) = 1 mA
IR
VR
Output Pulse
(IF = IR = 10 mA; measured
at IR(REC) = 1 mA)
Input Signal
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
TA = 150°C
IR , Reverse Current (µA)
IF, Forward Current (mA)
100
1 50°C
10
1 25°C
1.0
85°C
25°C
0.1
0.0
– 40°C
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
– 55°C
TA = 25°C
0.001
0.1
0.2
0.3
0.4
0.5
0
0.6
5
V F, Forward Voltage (V)
Figure 2. Forward Voltage
10
15
20
VR, Reverse Voltage (V)
25
30
Figure 3. Leakage Current
14
C T , Total Capacitance (pF)
12
10
8
6
4
2
0
0
5
10
15
20
25
30
VR, Reverse Voltage (V)
Figure 4. Total Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
Similar pages