HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2004.08.26 Page No. : 1/4 HBAS16 HIGH-SPEED SWITCHING DIODE Description SOT-23 • The HBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. Diagram: • The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. Features • Small SMD Package (SOT-23) • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................................................. -65~+150 °C Junction Temperature .................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 200 mW • Maximum Voltages and Currents (TA=25°C) Reverse Voltage.................................................................................................................................................. 75 V Repetitive Reverse Voltage ................................................................................................................................ 85 V Forward Current............................................................................................................................................. 250 mA Repetitive Forward Current ........................................................................................................................... 500 mA Forward Surge Current (1ms)................................................................................................................................ 1 A Electrical Characteristics (TA=25°C) Characteristic Reverse Breakdown Voltage Forward Voltage Symbol Condition Min. Max. Unit 75 - V V(BR) IR=100uA VF(1) IF=1mA - 715 mV VF(2) IF=10mA - 855 mV VF(3) IF=50mA - 1000 mV VF(4) IF=150mA - 1250 mV Reverse Current IR VR=75V - 1 uA Total Capacitance CT VR=0, f=1MHZ - 2 pF Reverse Recovery Time Trr IF=IR=10mA, RL=100Ω, measured at IR=1mA - 6 nS HBAS16 HSMC Product Specification HI-SINCERITY Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2004.08.26 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Capacitance & Reverse-Biased Voltage Forward Biased Voltage & Forward Current 1 Capacitance-Cd (pF) Current-IF (mA) 450 300 150 0 0.1 0 500 1000 1500 Forward Biased Voltage-V F (mV) HBAS16 2000 0.1 1 10 100 Reverse Biased Voltage-VR (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2004.08.26 Page No. : 3/4 MICROELECTRONICS CORP. SOT-23 Dimension DIM A B C D G H J K L S V Marking: A L A Pb-Free: " " (Note) Normal: None B S 1 V 6 Pb Free Mark 3 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. 2 G Pin Style: 1.Anode 2.NC 3.Cathode Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 C D H K Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm J 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAS16 HSMC Product Specification HI-SINCERITY Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2004.08.26 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAS16 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification