DEC DB302 3 amp silicon bridge rectifier Datasheet

DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-300-1C
3 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
PRV Ratings from 50 to 1000 Volts
ACTUAL SIZE
SERIES DB300-DB310
DT
DB306
Surge overload rating to 60 Amps peak
Reliable low cost molded epoxy construction
BH
Ideal for printed circuit board applications
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UL RECOGNIZED - FILE #E124962
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MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on top of case; positive lead at beveled corner
Mounting Position: Any. Thru hole provided for #6 screw (NOTE 1)
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Weight: 0.13 Ounces (3.6 Grams)
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
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PARAMETER (TEST CONDITIONS)
SYMBOL
Series Number
Maximum DC Blocking Voltage
V ¼½
Working Peak Reverse Voltage
V ±³²i´
Maximum Peak Recurrent Reverse Voltage
V µµ¶
V ·‚¸ ·¹dº»
It
RMS Reverse Voltage
Thermal Energy (Rating for Fusing) t < 8.3mSec
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). Tc = 60 C
@ T = 60 C (Note 2)
Average Forward Rectified Current
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@ T = 25 C (Note 3)
UNITS
Typical Junction Capacitance (Note 4)
B
C
@ T = 25 C
D
E
@T = 125 C
Minimum Insulation Breakdown Voltage (Circuit to Case)
VOLTS
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AMPS
SEC
01
2
AMPS
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°C
3
I
V 465
Maximum Forward Voltage (Per Diode) at 1.5 Amps DC
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I T , T
Junction Operating and Storage Temperature Range
Maximum Reverse Current at Rated V @+A
RATINGS
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Junction to Ambient (Note 3)
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Typical Thermal Resistance
Junction to Case (Note 2)
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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-300-2C
3 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB300 - DB310
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Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
5
60Hz
Resistive and Inductive Loads
4
Case, Tc
3
NOTE 1
2
Ambient, TA
1
0
0
50
Ä
100
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NOTE 2
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150
Å
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Temperature, C
Number of Cycles at 60 Hz
FIGURE 1. FORWARD CURRENT DERATING CURVE
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
50
Instantaneous Reverse Current, I
(Microamperes)
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Instantaneous Forward Current
Amperes
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NOTE 3
1.0
0.1
10
1.0.1
0.1
.01
0.01
0.4
08
0.6
1.0
1.2
1.4
1.6
0
40
1.8
Percent of Rated Peak Reverse Voltage
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
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Capacitance, pF
NOTES
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NOTE 4
(1) Case Temperature, T With Bridge Mounted on 4" Sq. x 0.11" Thick
(10.5cm Sq. x 0.3cm) Aluminum Plate
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Ambient Temperature, T With Bridge Mounted on PC Board With
0.5" Sq. (12mm Sq.) Pads and Lead Length of 0.375" (9.5mm)
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(2) T = 60 C
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Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
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(3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
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(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
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