Analog Power AM80N20-40PCFM N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 45 @ VGS = 10V 60 @ VGS = 5.5V ID(A) 80a Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 a TC=25°C ID 80 Continuous Drain Current IDM Pulsed Drain Current b 100 IS 63 Continuous Source Current (Diode Conduction) a a T =25°C P 60 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 62.5 RθJC 2.5 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM80N20-40PCFM_1A Analog Power AM80N20-40PCFM Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A VGS = 5.5 V, ID = 4 A VDS = 15 V, ID = 5 A IS = 31 A, VGS = 0 V Min Typ Max 1 ±100 1 25 90 Unit V nA uA A 45 60 35 0.87 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 100 V, VGS = 5.5 V, ID = 5 A VDS = 100 V, RL = 20 Ω, ID = 5 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz 100 34 65 49 68 199 61 8925 444 424 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM80N20-40PCFM_1A Analog Power AM80N20-40PCFM Typical Electrical Characteristics 0.08 40 0.06 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 5.5V 0.04 6V,8V,10V 0.02 30 20 10 0 0 0 5 10 15 0 20 ID-Drain Current (A) 4 6 8 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.15 100 TJ = 25°C ID = 5A TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.1 0.05 0 10 1 0.1 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 20 18000 F = 1MHz 10V,8V,6V 15 14000 5.5V Capacitance (pf) ID - Drain Current (A) 16000 10 5 12000 Ciss 10000 8000 6000 4000 2000 0 Coss Crss 0 0 0.5 1 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM80N20-40PCFM_1A Analog Power AM80N20-40PCFM Typical Electrical Characteristics 2.5 VDS = 100V ID = 5A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 40 80 120 160 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 800 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC 1 0.1 DC Idm limit Limited by RDS 700 600 500 400 300 200 100 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 RθJA(t) = r(t) + RθJA 0.1 RθJA = 62.5 °C /W 0.05 P(pk) 0.02 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM80N20-40PCFM_1A Analog Power AM80N20-40PCFM Package Information © Preliminary 5 Publication Order Number: DS_AM80N20-40PCFM_1A