UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 TO-92NL FEATURES * Collector current up to 1.5A * Collector-emitter voltage up to 25 V * Complimentary to UTC HE8051 ORDERING INFORMATION Ordering Number Lead Free Halogen Free HE8551L-x-T92-B HE8551G-x-T92-B HE8551L-x-T92-K HE8551G-x-T92-K HE8551L-x-T92-R HE8551G-x-T92-R HE8551L-x-T9N-B HE8551G-x-T9N-B HE8551L-x-T9N-K HE8551G-x-T9N-K HE8551L-x-T9N-R HE8551G-x-T9N-R www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92 TO-92NL TO-92NL TO-92NL Pin Assignment 1 2 3 E B C E B C E B C E B C E B C E B C Packing Tape Box Bulk Tape Reel Tape Box Bulk Tape Reel 1 of 4 QW-R201-047.D HE8551 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Dissipation (TA=25℃) PC 1 W Collector Current IC -1.5 A Junction Temperature TJ +150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) VBE fT COB TEST CONDITIONS IC=-100μA, IE=0 IC=-2mA, IB=0 IE=-100μA, IC=0 VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN -40 -25 -6 TYP MAX -100 -100 45 85 40 100 170 160 80 -0.28 -0.98 -0.66 190 9.0 UNIT V V V nA nA 500 -0.5 -1.2 -1.0 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 250-500 2 of 4 QW-R201-047.D HE8551 TYPICAL CHARACTERISTICS Fig. 2 DC Current Gain Fig. 1 Static Characteristics 103 -0.5 -0.4 -0.3 -0.2 IB=-3.0mA 102 VCE=-1V IB=-2.5mA IB=-2.0mA IB=-1.5mA 101 IB=-1.0mA -0.1 IB=-0.5mA 100 -1 -10 -100 -101 -102 Collector Current, IC (mA) -103 Saturation Voltage, VBE & VCE (mV) -0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector-Emitter Voltage, VCE ( V) Collector Current, IC (mA) 0 Capacitance, Cob (pF) Current Gain-Bandwidth Product, fT (MHz) PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-047.D HE8551 TYPICAL CHARACTERISTICS(Cont.) PD-TA 1.2 PD(W), Power Dissipation PNP SILICON TRANSISTOR 1 0.8 0.6 0.4 0.2 0 0 50 100 200 150 Ambient Temperature-TA( ) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-047.D