TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD(A) The ASI TVV030A is Designed for .112 x 45° FEATURES: A Ø .630 NOM C • • • Omnigold™ Metalization System B C E E B D E G MAXIMUM RATINGS 1/4-28 UNF-2A IC 16 A VCBO 60 V VCEO 30 V 4.0 V VEBO PDISS 150 W @ TC = 25 C O -65 C to +200 C TSTG -65 OC to +150 OC θ JC 1.2 OC/W SYMBOL MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM 1.050 / 26.67 C .545 / 13.84 .555 / 14.10 D .495 / 12.57 .505 / 12.83 E .003 / 0.08 .007 / 0.18 .830 / 21.08 F O TJ CHARACTERISTICS DIM B O F H G .185 / 4.70 .198 / 5.03 H .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10661 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 100 mA BVCER IC = 100 mA BVCEO MINIMUM TYPICAL MAXIMUM UNITS 60 V 60 V IC = 100 mA 30 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V COB VCB = 30 V PG VCE = 28 V IMD1 POUT = 30 W RBE = 10 Ω IC = 1.0 A 10 f = 1.0 MHz IC = 3.5 A f = 225 MHz 120 --- 150 pF 7.5 dB -53 dBC A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1