ASI ASI10661 Npn silicon rf power transistor Datasheet

TVV030A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .500 4L STUD(A)
The ASI TVV030A is Designed for
.112 x 45°
FEATURES:
A
Ø .630 NOM
C
•
•
• Omnigold™ Metalization System
B C
E
E
B
D
E
G
MAXIMUM RATINGS
1/4-28 UNF-2A
IC
16 A
VCBO
60 V
VCEO
30 V
4.0 V
VEBO
PDISS
150 W @ TC = 25 C
O
-65 C to +200 C
TSTG
-65 OC to +150 OC
θ JC
1.2 OC/W
SYMBOL
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
1.050 / 26.67
C
.545 / 13.84
.555 / 14.10
D
.495 / 12.57
.505 / 12.83
E
.003 / 0.08
.007 / 0.18
.830 / 21.08
F
O
TJ
CHARACTERISTICS
DIM
B
O
F
H
G
.185 / 4.70
.198 / 5.03
H
.497 / 12.62
.530 / 13.46
ORDER CODE: ASI10661
O
TC = 25 C
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCER
IC = 100 mA
BVCEO
MINIMUM TYPICAL MAXIMUM
UNITS
60
V
60
V
IC = 100 mA
30
V
BVEBO
IE = 10 mA
4.0
V
hFE
VCE = 5.0 V
COB
VCB = 30 V
PG
VCE = 28 V
IMD1
POUT = 30 W
RBE = 10 Ω
IC = 1.0 A
10
f = 1.0 MHz
IC = 3.5 A
f = 225 MHz
120
---
150
pF
7.5
dB
-53
dBC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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