Transmissive Photosensors (Photo lnterrupters) CNZ1120 (ON1120) Photo lnterrupter For contactless SW, object detection Unit: mm ■ Overview CNZ1120 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 19.0±0.35 ■ Features • Wide gap between emitting and detecting elements, suitable for thick plate detection Gap: 10 mm • Fast response: tr , tf = 6 µs (typ.) • The external case is molded using visible light cutoff resin. The case has no openings, so the photosensor is not easily susceptible to output attenuation resulting from dust or particles Input (Light Symbol Rating Reverse voltage VR 3 V IF 50 mA Power dissipation *1 PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 20 V Emitter-collector voltage (Base open) VECO 5 V IC 20 mA PC 100 mW Collector current Collector power dissipation Temperature *2 Operating ambient temperature T opr −5 to +60 °C Storage temperature Tstg −15 to +65 °C (2.0) 2-0.45 3.0 min. (15.5) (2.54) SEC. A-A' 2 3 1: Anode 2: Cathode 3: Collector 1 4 4: Emitter PISTR104-014 Package (Note) ( ) Dimension is reference Unit emitting diode) Forward current 6.2±0.25 2-C0.5 A' ■ Absolute Maximum Ratings Ta = 25°C Parameter 3.0±0.2 14.0±0.2 10.0±0.3 A Note) *1: Input power derating ratio is 1.88 mW/°C at Ta ≥ 25°C. 2: * Output power derating ratio is 2.50 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max 1.2 Unit Forward voltage VF IF = 50 mA 1.5 V characteristics Reverse current IR VR = 3 V 10 µA VCE = 10 V, IF = 0 mA, ID = 0 mA 200 nA Input Output Collector-emitter cutoff current characteristics (Base open) Transfer ICEO Collector-emitter capacitance CC VCE = 10 V, f = 1 MHz Collector current IC VCE = 10 V, IF = 20 mA, RL = 100 Ω characteristics Collector-emitter saturation voltage VCE(sat) Rise time * tr Fall time * tf 5 mA IF = 50 mA, IC = 0.1 mA VCC = 10 V, IC = 1 mA, RL = 100 Ω pF 1.0 0.4 V 6 µs 6 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50Ω RL 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00032BED 1 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. 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