IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS®-T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 2 (HBM) EIA/JESD22-A114-B Type Package Ordering Code Marking IPB80N06S3L-08 PG-TO263-3-2 SP0000-88128 3N06L08 IPI80N06S3L-08 PG-TO262-3-1 SP0000-88131 3N06L08 IPP80N06S3L-08 PG-TO220-3-1 SP0000-88127 3N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 Unit A 61 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse3) E AS I D=40 A 170 mJ Drain gate voltage2) V DG 55 V Gate source voltage4) V GS ±16 V Power dissipation P tot 105 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.4 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=29 A - 11.5 14.2 mΩ V GS=5 V, I D=29 A, SMD version - 11.2 13.9 V GS=10 V, I D=43 A - 6.5 7.9 V GS=10 V, I D=43 A, SMD version - 6.2 7.6 Rev. 1.0 page 2 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Parameter Symbol Values Conditions Unit min. typ. max. - 6475 - - 812 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 775 - Turn-on delay time t d(on) - 16 - Rise time tr - 35 - Turn-off delay time t d(off) - 39 - Fall time tf - 25 - Gate to source charge Q gs - 34 - Gate to drain charge Q gd - 16 - Gate charge total Qg - 89 134 Gate plateau voltage V plateau - 4.9 - V - - 80 A - - 320 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 45 - ns Reverse recovery charge2) Q rr - 53 - nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 86 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +16V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 4 V 120 100 100 80 80 I D [A] P tot [W] 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs limited by on-state resistance 100 10 µs 100 0.5 Z thJC [K/W] 100 µs I D [A] 1 ms 0.1 10-1 0.05 0.01 10 10-2 single pulse -3 1 10 0.1 1 10 100 V DS [V] Rev. 1.0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 16 160 10 V 140 14 5V 120 12 R DS(on) [mΩ] 100 I D [A] 5V 80 4.5 V 60 10 6V 8 8V 40 4V 10 V 6 3.5 V 20 3V 0 4 0 1 2 3 4 5 6 0 50 100 150 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4 V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 160 13 140 11 120 I D [A] 100 R DS(on) [mΩ] -55 °C 25 °C 80 175 °C 60 9 7 40 5 20 0 3 0 1 2 3 4 5 6 V GS [V] Rev. 1.0 -60 -20 20 60 100 140 180 T j [°C] page 5 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 3 Ciss 2.5 Coss C [pF] V GS(th) [V] 2 550µA 1.5 Crss 103 55µA 1 0.5 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 100 103 25°C 100°C I F [A] I AV [A] 102 175 °C 101 25 °C 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 150°C 10 1 10 100 1000 t AV [µs] page 6 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 13 Typical avalanche Energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 66 400 350 64 20 A 62 300 60 V BR(DSS) [V] E AS [mJ] 250 30 A 200 40 A 150 58 56 54 52 100 50 50 48 0 46 0 50 100 150 200 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 11 V V GS 44 V 10 Qg V GS [V] 8 6 4 2 Q gate Q gs 0 0 50 100 150 Q gd 200 Q gate [nC] Rev. 1.0 page 7 2005-09-16 IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-09-16