ANADIGICS AWT6631Q7 Help3dc umts2100 (band 1) lte/wcdma/cdma/td-scdma linear pam Datasheet

HELP3DC
TM
AWT6631
UMTS2100 (Band 1)
LTE/WCDMA/CDMA/TD-SCDMA Linear PAM
Data Sheet - Rev 2.7
FEATURES
•
CDMA/EVDO, WCDMA/HSPA, LTE and
TD-SCDMA Compliant
•
3rd Generation HELPTM technology
•
High Efficiency (R99 waveform):
AWT6631
• 41 % @ POUT = +28.25 dBm
• 24 % @ POUT = +17 dBm
•
Simpler Calibration with only 2 Bias Modes
• Optimized for SMPS Supply
• Low Quiescent Current: 8 mA
•
Low Leakage Current in Shutdown Mode: <4 µA
•
Internal Voltage Regulator
•
Integrated “daisy chainable” directional couplers
with CPLIN and CPLOUT Ports
•
Optimized for a 50 Ω System
•
Low Profile Miniature Surface Mount Package
•
Internal DC blocks on IN/OUT RF ports
•
1.8 V Control Logic
•
RoHS Compliant Package, 260 oC MSL-3
that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
which increases handset talk and standby time. The
self-contained 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50 Ω system.
APPLICATIONS
•
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Wireless Handsets and Data Devices for:
• WCDMA/HSPA/LTE IMT-Band
• CDMA/EVDO Bandclass 6
• TD-SCDMA 1.82/2.0 GHz Band
• TD - LTE Band 33, 34, and 39
GND at Slug (pad)
VBATT
1
RFIN
2
VMODE2 (N/C)
3
VMODE1
VEN
10
VCC
PRODUCT DESCRIPTION
The AWT6631 PA is designed to provide highly linear
output for WCDMA, CDMA , LTE and TD-SCDMA
handsets and data devices with high efficiency at
both high and low power modes. This HELP3DCTM
PA can be used with an external switch mode power
supply (SMPS) to improve its efficiency and reduce
current consumption further at medium and low output
powers. A “daisy chainable” directional coupler is
integrated in the module thus eliminating the need
of external couplers. The device is manufactured on
an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. There are two selectable bias modes
03/2012
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
AWT6631
VBATT
1
10
RFIN
2
9
RFOUT
VMODE2 (N/C)
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
2
VMODE2 (N/C) No Connection
Mode Control Voltage 1
4
VMODE1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
PA Enable Voltage
Coupler Output
Supply Voltage
Data Sheet - Rev 2.7
03/2012
VCC
AWT6631
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Battery Voltage (VBATT)
0
+6
V
Control Voltages (VMODE1, VENABLE)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure to
absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNITS
Supply Voltage (VCC)
+0.5
+3.4
+4.35
V
POUT ≤ +28.25 dBm
Battery Voltage (VBATT)
+3.1
+3.4
+4.35
V
POUT ≤ +28.25 dBm
Enable Voltage (VENABLE)
+1.35
0
+1.8
0
+3.1
+0.5
V
PA “on”
PA “shut down”
Mode Control Voltage (VMODE1)
+1.35
0
+1.8
0
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
-30
-
+90
°C
Case Temperature (TC)
COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
Data Sheet - Rev 2.7
03/2012
AWT6631
Table 4: Electrical Specifications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
COMMENTS
1920
-
1980
MHz
UMTS Band 1
27.45
16.2
28.25
17
28.25
17
dBm
25
12
27
13
30
16
dB
HPM, POUT = 28.25 dBm
LPM, POUT = 17 dBm
ACLR1 at 5 MHz offset (2)
-
-41
-42
-37
-38
dBc
HPM, POUT = 28.25 dBm
LPM, POUT = 17 dBm
ACLR2 at 10 MHz offset (2)
-
-55
-55
-48
-48
dBc
HPM, POUT = 28.25 dBm
LPM, POUT = 17 dBm
Power-Added Efficiency (2)
37
21
41
24
-
%
HPM, POUT = 28.25 dBm
LPM, POUT = 17 dBm
Quiescent Current (Icq)
Low Bias Mode
-
9
14
mA
VMODE1 = +1.8 V
Mode Control Current
-
0.3
0.5
mA
through VMODE pin, VMODE1 = 1.8 V
Enable Current
-
0.3
0.5
mA
through VENABLE pin
BATT Current
-
2.5
5
mA
through VBATT pin, VMODE1 = +1.8 V
Leakage Current
-
4
7
µA
VBATT = +4.2 V, VCC = +4.2 V
VENABLE = 0 V, VMODE1 = 0 V
Noise in Receive Band (3)
-
-137
-143
-135
-138
dBm/
Hz
Harmonics
2fO
3fO, 4fO
-
-39
-55
-35
-50
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
20
-
dB
Directivity
-
20
-
dB
Coupler IN-OUT
Daisy Chain Insertion Loss
-
<0.25
-
dB
698 - 2620 MHz
Pin 8 to 6
Shutdown Mode
Operating Frequency (f)
RF Output Power (Pmax)
R99 WCDMA, HPM
R99 WCDMA, LPM
(1)
Gain
Spurious Output Level
(all suprious outputs)
Load mismatch stress with no
permanent degradation of failure
Phase Delta (HPM-LPM)
POUT < +28.25 dBm, VMODE1 = 0 V
POUT < 17 dBm, VMODE1 = +1.8 V
POUT < +28.25 dBm
-
-
-70
dBc
POUT ≤ +28.25 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating range
-
10
-
Deg
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1950 MHz.
(3) Noise measured at 2110 MHz to 2170 MHz.
4
3GPP TS 24.121-1, Rel 8
Table C.11.1.3, for WCDMA
Subtest 1
Data Sheet - Rev 2.7
03/2012
AWT6631
Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK)
(TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
COMMENTS
Operating Frequency (f)
1920
-
1980
MHz
UMTS Band 1
RF Output Power (Pmax) (1)
LTE, HPM
LTE, LPM
26.45
15.2
27.25
16
27.25
16
dBm
TS 36.101 Rel 8 for LTE
25
12
27
13
30
16
dB
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
ACLR E-UTRA (2)
at ± 10 MHz offset
-
-38
-38
-
dBc
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
ACLR1 UTRA (2)
at ± 7.5 MHz offset
-
-39
-39
-
dBc
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
ACLR2 UTRA (2)
at ± 12.5 MHz offset
-
-60
-60
-
dBc
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
Power-Added Efficiency (2)
-
36
22
-
%
HPM, POUT = 27.25 dBm
LPM, POUT = 16 dBm
Noise emissions B34
-
-38
-35
LTE NS_05 PHS emissions
-
-48
-42
Gain
Spurious Output Level
(all spurious outputs)
Load mismatch stress with
no permanent degradation or
failure
dBm/
300 kHz
2010 - 2025 MHz, 100 RB QPSK
LTE signal centered at 1970
MHz at LTE max power
1884.5 - 1919.6 MHz
-
-
<-70
dBc
POUT ≤ +27.25 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1950 MHz.
5
dBm/
MHz
Data Sheet - Rev 2.7
03/2012
AWT6631
Table 6: Electrical Specifications - CDMA Operation (CDMA2000, RC-1)
(TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
COMMENTS
Operating Frequency (f)
1920
-
1980
MHz
Band Class 6
RF Output Power (Pmax) (1)
CDMA, HPM
CDMA, LPM
26.7
15.7
27.5
16.5
-
dBm
CDMA2000, RC-1
25
12
27
13
30
16
dB
HPM, POUT = 27.5 dBm
LPM, POUT = 16.5 dBm
Adjacent Channel Power (2)
at +1.25 MHz offset
Primary Channel BW - 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-50
-53
-
dBc
HPM, POUT = 27.5 dBm
LPM, POUT = 16.5 dBm
Adjacent Channel Power (2)
at +1.98 MHz
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-55
-59
-
dBc
HPM, POUT = 27.5 dBm
LPM, POUT = 16.5 dBm
Power-Added Efficiency (2)
-
38
23
-
%
HPM, POUT = 27.5 dBm
LPM, POUT = 16.5 dBm
Gain
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
-
-
-70
dBc
POUT ≤ +27.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1950 MHz.
Table 7: Electrical Specifications - EVDO Rev. B Operation
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, [10001] or [10101] Waveform)
PARAMETER
MIN
TYP
MAX
Spurious in PHS Band
(1884.5 - 1919.6 MHz)
-
-45
-41
Intermodulation IM3
-
-23
-13
6
UNIT
COMMENTS
dBm/300 KHz HPM, +18 dBm
dBm/MHz
Data Sheet - Rev 2.7
03/2012
HPM, +18 dBm
AWT6631
Table 8: Electrical Specifications - TD-LTE Operation, Band 39 (10 MHz QPSK, 12 RB, Start = 0)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
Operating Frequency (f)
1900
1880
-
1920
1920
MHz
UMTS Band 33
UMTS Band 39
26
15.5
27
16
27
16
dBm
TS 36.101 Rel 8 for LTE
25
12
26.5
13
30
16
dB
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
LTE to LTE, E-UTRA (2)
-
-37
-40
-36
-36
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
UTRA ACLR1 (2)
-
-38
-40
-36
-36
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
UTRA ACLR2 (2)
-
-60
-60
-42
-42
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Power-Added Efficiency (2)
-
34
22
-
%
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode
-
8
-
mA
through VCC pin
-
-
-35
-50
dBc
POUT ≤ +27 dBm
RF Output Power (Pmax) (1)
LTE (MPR = 0), HPM
LTE (MPR = 0), LPM
Gain
Harmonics
2fO
3fO, 4fO
Spurious Output Level
(all spurious outputs)
Load mismatch stress with
no permanent degradation or
failure
-
-
-70
dBc
POUT ≤ +27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1900 MHz.
7
COMMENTS
Data Sheet - Rev 2.7
03/2012
AWT6631
Table 9: Electrical Specifications - TD-LTE Operation, Band 34 (10 MHz QPSK, 12 RB, Start = 0)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = 0 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
Operating Frequency (f)
2010
-
2025
MHz
Band 34
RF Output Power (Pmax) (1)
LTE (MPR = 0), HPM
LTE (MPR = 0), LPM
26
15.5
27
16
27
16
dBm
TS 36.101 Rel 8 for LTE
25
12
27
13
30
16
dB
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
LTE to LTE, E-UTRA (2)
-
-38
-38
-36
-36
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
UTRA ACLR1 (2)
-
-39
-38
-36
-36
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
UTRA ACLR2 (2)
-
-62
-60
-42
-42
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Power-Added Efficiency (2)
-
35
23
-
%
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode
-
8
-
mA
through VCC pin
-
-
-35
-50
dBc
POUT ≤ +27 dBm
Gain
Harmonics
2fO
3fO, 4fO
Spurious Output Level
(all spurious outputs)
Load mismatch stress with
no permanent degradation or
failure
-
-
-70
dBc
POUT ≤ +27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 2017.5 MHz.
8
COMMENTS
Data Sheet - Rev 2.7
03/2012
AWT6631
Table 10: Electrical Specifications - TD-SCDMA Operation
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
Operating Frequency (f)
1880
-
1920
MHz
3GPP TS 25.12
Section 5.2a,f
RF Output Power (Pmax) (1)
TD-SCDMA, HPM
TD-SCDMA, LPM
26.2
15.2
27
16
27
16
dBm
3GPP TS 25.62
Section 6.2.1
25
12
27
13
30
16
dB
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
ACLR1 at 1.6 MHz offset (2)
-
-42
-42
-
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
ACLR2 at 3.2 MHz offset (2)
-
-55
-55
-
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Power-Added Efficiency (2)
-
36
20
-
%
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode
-
8
13
mA
VMODE1 = +1.8 V
Mode Control Current
-
0.3
0.5
mA
through VMODE pin, VMODE1 =
+1.8 V
Enable Current
-
0.3
0.5
mA
through VENABLE pin, VEN =
+1.8 V
BATT Current
-
2.5
5
mA
through VBATT pin, VMODE1 =
+1.8 V
Leakage Current
-
4
-
µA
VBATT = +4.2 V, VCC = +4.2 V
VENABLE = 0 V, VMODE1 = 0 V
Harmonics
2fO
3fO, 4fO
-
-
-35
-50
dBc
POUT ≤ +27 dBm
Input Impedance
-
-
2:1
VSWR
8:1
-
-
VSWR
Gain
Load mismatch stress with
no permanent degradation or
failure
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 1900 MHz.
9
Data Sheet - Rev 2.7
03/2012
COMMENTS
Applies over full operating
range
AWT6631
Table 11: Electrical Specifications - TD-SCDMA Operation
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNITS
Operating Frequency (f)
2010
-
2025
MHz
3GPP TS 25.102
Section 5.2a
RF Output Power (Pmax) (1)
TD-SCDMA, HPM
TD-SCDMA, LPM
26.2
15.2
27
16
27
16
dBm
3GPP TS 25.62
Section 6.2.1
25
12
27
13
30
16
dB
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
ACLR1 at 1.6 MHz offset (2)
-
-42
-42
-
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
ACLR2 at 3.2 MHz offset (2)
-
-55
-55
-
dBc
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Power-Added Efficiency (2)
-
36
20
-
%
HPM, POUT = 27 dBm
LPM, POUT = 16 dBm
Quiescent Current (Icq)
Low Bias Mode
-
8
13
mA
VMODE1 = +1.8 V
Mode Control Current
-
0.3
0.5
mA
through VMODE pin, VMODE1 =
+1.8 V
Enable Current
-
0.3
0.5
mA
through VENABLE pin, VEN =
+1.8 V
BATT Current
-
2.5
5
mA
through VBATT pin, VMODE1 =
+1.8 V
Leakage Current
-
4
-
µA
VBATT = +4.2 V, VCC = +4.2 V
VENABLE = 0 V, VMODE1 = 0 V
Harmonics
2fO
3fO, 4fO
-
-
-35
-50
dBc
POUT ≤ +27 dBm
Input Impedance
-
-
2:1
VSWR
8:1
-
-
VSWR
Gain
Load mismatch stress with
no permanent degradation or
failure
Notes:
(1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB.
(2) ACLR and Efficiency measured at 2012.5 MHz.
10
Data Sheet - Rev 2.7
03/2012
COMMENTS
Applies over full operating
range
AWT6631
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE1 voltages.
Bias Modes
The power amplifier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to VMODE1.
The Bias Control table lists the recommended modes
of operation for various applications. VMODE2 is not
necessary for this PA.
Two operating modes are available to optimize current
consumption. High Bias/High Power operating mode
is for POUT levels > 16 dBm. At around 17 dBm output
power, the PA should be “Mode Switched” to Low power
mode for lowest quiescent current consumption.
Vcontrols
Venable/Vmode(s)
On Sequence Start
T_0N = 0µ
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
Off Sequence Start
T_0FF = 0µ
ON Sequence
OFF Sequence
RFIN
notes 1,2
VEN
VCC
note 1
T_0N+1µS
T_0N+3µS
Referenced After 90% of Rise
Time
T_0FF+2µS T_0FF+3µS
Referenced Before10% of Fall
Time
Figure 3: Recommended ON/OFF Timing Sequence
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF defined as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended.
11
Data Sheet - Rev 2.7
03/2012
AWT6631
Table 12: Bias Control (CDMA, WCDMA and LTE)
POUT
LEVELS
BIAS MODE
VENABLE
VMODE1
VCC
VBATT
High power
(High Bias Mode)
> +16 dBm
High
+1.8 V
0V
1.5 - 4.35 V
> 3.1 V
Med/low power
(Low Bias Mode)
 +17 dBm
Low
+1.8 V
+1.8 V
0.5 - 4.35 V
> 3.1 V
-
Shutdown
0V
0V
0.5 - 4.35 V
> 3.1 V
APPLICATION
Shutdown
Table 13: Bias Control (TD-SCDMA)
POUT
LEVELS
BIAS MODE
VENABLE
VMODE1
VCC
VBATT
TD-SCDMA - high power
(High Bias Mode)
> +15 dBm
High
+1.8 V
0V
1.5 - 4.35 V
> 3.1 V
TD-SCDMA - med/low
power (Low Bias Mode)
+16 dBm
Low
+1.8 V
+1.8 V
0.5 - 4.35 V
> 3.1V
-
Shutdown
0V
0V
0.5 -4..35 V
> 3.1 V
APPLICATION
Shutdown
12
Data Sheet - Rev 2.7
03/2012
AWT6631
PERFROMANCE DATA:
Figure 5: WCDMA Gain (dB) over Voltage
Figure
4: WCDMA
Gain (dB)
Temperature
Figure 4:
WCDMA
Gain
(dB)over
over
Temperature
(Vbatt=Vcc=3.4V)
(V
BATT = VCC = 3.4 V)
30
25C 3.2Vcc
25C 3.4Vcc
26
25C 3.4Vcc
90C 3.4Vcc
25
Gain (dB)
24
Gain (dB)
30
-30C 3.4Vcc
28
Figure 5: WCDMA(Tc=25C
Gain )(dB) over Voltage
(TC = 25 8C)
22
20
18
16
25C 4.2Vcc
25C 3.0Vcc
20
15
14
12
10
0
5
10
15
20
25
10
30
0
5
10
Pout (dBm)
6: WCDMAPAE
PAE (%)
(%) over
FigureFigure
6: WCDMA
overTemperature
Temperature
(Vbatt=Vcc=3.4V)
(VBATT = VCC = 3.4 V)
50
25C 3.2Vcc
40
25C 3.4Vcc
35
30
30
Efficiency
Efficiency (%)
90C 3.4Vcc
45
35
25
20
25C 4.2Vcc
25C 3.0Vcc
20
15
10
10
5
5
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pout (dBm)
Pout (dBm)
Figure 8:Figure
WCDMA
ACLR1
(dBc)
over Temperature
8: WCDMA
ACRL1 (dBc)
over Temperature
(Vbatt=Vcc=3.4V)
(VBATT
= VCC = 3.4 V)
FigureFigure
9: WCDMA
ACLR1 (dBc) over Voltage
5: WCDMA ACLR1 (dBc) over Voltage
(Tc=25C
(T
C = )25 8C)
-25
-30C 3.4Vcc
25C 3.4Vcc
-35
-30
90C 3.4Vcc
ACLR1 (5MHz dBc)
ACLR1 (5MHz dBc)
30
25
15
-30
25
50
25C 3.4Vcc
40
20
Figure
7: WCDMA
(%)
over
Voltage
Figure
5: WCDMA PAE
PAE (%)
over
Voltage
)
= 25 8C)
(TC(Tc=25C
-30 3.4cc
45
15
Pout (dBm)
-40
-45
-50
25C 3.2Vcc
25C 3.4Vcc
-35
25C 4.2Vcc
25C 3.0Vcc
-40
-45
-50
-55
0
5
10
15
Pout (dBm)
13
20
25
30
-55
0
5
10
15
Pout (dBm)
Data Sheet - Rev 2.7
03/2012
20
25
30
AWT6631
VBATT
VCC
C5
2.2 µF
C1
33pF
C2
0.1µF
GND at slug
1
2
RFIN
3
VMODE1
VEN
VBATT
VCC
RFIN
RFOUT
10
9
VMODE1
5
VEN
RFOUT
8
VMODE2 (N/C) CPLIN
4
CPLIN
GND 7
CPLOUT 6
CPLOUT
VCC
GND
GND
VBATT
Figure 10: Evaluation Board Schematic
RFOUT
C3
C6
RFIN
C2
C1
CPLOUT
VMODE1
VEN
GND
GND
VMODE2
C4
CPLIN
Figure 11: Evaluation Board Layout
14
C3
2.2µF ceramic
Data Sheet - Rev 2.7
03/2012
AWT6631
HELP3DCTM
The AWT6631 power amplifier module is based on
ANADIGICS proprietary HELP3DC™ technology.
The PA is designed to operate up to 17 dBm in the low
power mode, thus eliminating the need for three gain
states, while still maintaining low quiescent current
and high efficiency in low and medium power levels.
Average weighted efficiency can be increased by
using an external switch mode power supply (SMPS)
or DC/DC converter to reduce VCC.
The directional “daisy chainable” coupler is integrated
within the PA module, therefore there is no need for
external couplers.
voltage source. The PA is turn on/off is controlled
by VEN pin. A single VMODE control logic (VMODE1) is
needed to operate this device. AWT6631 requires
only two calibration sweeps for system calibration,
thus saving calibration time.
Figure 5 shows one application example on mobile
board. C1 and C2 are RF bypass caps and should
be placed nearby pin 1 and pin 10. Bypass caps
C4 and C5 may not be needed. Also a “T” matching
topology is recommended at PA RFIN and RFOUT
ports to provide matching between input TX Filter and
Duplexer / Isolator.
The AWT6631 has an integrated voltage regulator,
which eliminates the need for an external constant
SMPS
VBATT
C6
GND
RFIN
TX filter
C1
C2
GND
at slug
GND
Input
Matching
VBATT
VCC
RFIN
RFOUT
VMODE2
CPL IN
VMODE1
C5
VEN
GND
GND
50Ω
CPLOUT
GND
To
Detector
PA_R0
PA_0N
C4
GND
Figure 12: Typical Application Circuit
15
Data Sheet - Rev 2.7
03/2012
GND
RFOUT
GND
BB
C3
Output
Matching
Duplexer
AWT6631
PACKAGE OUTLINE
Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code
YY=Year; WW=Work week
6631
Part Number
LLLLNN
YYWWCC
Lot Number
Country Code (CC)
Figure 14: Branding Specification
16
Data Sheet - Rev 2.7
03/2012
AWT6631
PCB AND STENCIL DESIGN GUIDELINE
Figure 15: Recommended PCB Layout Information
17
Data Sheet - Rev 2.7
03/2012
AWT6631
COMPONENT PACKAGING
Pin 1
Figure 16: Carrier Tape
Figure 17: Reel
18
Data Sheet - Rev 2.7
03/2012
AWT6631
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
AWT6631Q7
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
AWT6631P9
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Partial Tape and Reel
Surface Mount Module
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
19
Data Sheet - Rev 2.7
03/2012
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