CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Power Management (Dual Transistor) CHUMF24PT Tr1:VOLTAGE 50 Volts CURRENT 150 mAmpere DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Power management circuit FEATURE * Small surface mounting type. (SC-88/SOT-363) * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SC4617 & CHDTC114E in one package. * Built in bias resistor(R1=10kΩ, Typ. ) SC-88/SOT-363 (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 R1 Tr1 2.15~2.45 R2 DTr2 1 3 SC-88/SOT-363 Dimensions in millimeters 2SC4617 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO Collector-base voltage − 60 V VCEO Collector-emitter voltage − 50 V VEBO Emitter-base voltage − 7 V DC Output current − 150 mA − 150 mW +150 IC NOTE.1 PC Total power dissipation TSTG Storage temperature −55 TJ Junction temperature − Note 1. 120mW per element must not be exceeded. 150 O C O C CHDTC114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V − 50 NOTE.1 − 100 NOTE.2 − 150 mW IO DC Output current IC(Max.) mA PC Power dissipation TSTG Storage temperature −55 +150 O C TJ Junction temperature − 150 O C Note 1. Characteristics of built-in transistor. 2. Each terminal mounter on a recommended land. 2SC4617 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BVCEO Collector-emitter breakdown voltage IC=50uA 60 − − V BVCBO Collector-base breakdown voltage IC=1mA 50 − − V Emitter-base breakdown voltage IE=50uA 7 − ICBO Collector cut-off current VCB=60V − − − IEBO Emitter cut-off current DC current gain VEB=7V − VCE=6V,IC=1mA 180 Collector-emitter saturation voltage IC=50mA,IB=5mA VCB=12V,IE=0mA,f=1MHZ − − VCE=12V,IE=-2mA,f=100MHZ − BVEBO hFE VCE(sat) Cob Collector output capacitance fT Transition frequency V 100 nA − 100 nA − 390 − − 0.4 V 2 3.5 180 − pF MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTC114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − − V VI(on) Input on voltage IO=10mA; VO=0.3V − − 3.0 V V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 II Input current VI=5V − − 0.88 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA G1 DC current gain IO=5mA; VO=5.0V 30 − R1 Input resistor R2/R1 fT Resistor ratio Transition frequency Note Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz = − − 7 10 13 KΩ 0.8 − 1.0 250 1.2 − − MHz RATING CHARACTERISTIC CURVES ( CHUMF24PT ) 2SC4617 Typical Electrical Characteristics Ta=100OC 10 5 2 1 0.5 Grounded emitter output characteristics (1) Ta=25°C 0.50mA 80 Fig.3 mA 0.45 A 0.40m 0.35mA 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA 10 Grounded emitter output characteristics (2) 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0.2 IB=0A 0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current 0.5 IC/IB=10 0.2 0.1 Ta=100°C 25°C −55°C 0.05 IC/IB=50 Ta=100°C 25°C −55°C 0.1 0.02 0.01 0.01 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC(mA) 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC(mA) 8 16 20 Fig. 6 Gain bandwidth product vs. emitter current 0.05 0.02 0.2 0.2 4 IB=0A 12 COLLECTOR TO EMITTER VOLTAGE : VCE(V) TRANSITION FREQUENCY : fT(MHz) 0.5 0 0 2.0 BASE TO EMITTER VOLTAGE : VBE(V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 55OC 25OC 100 COLLECTOR CURRENT : IC(mA) VCE=6V 25°C −55°C COLLECTOR CURRENT : IC(mA) 50 20 Fig.2 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC(mA) Fig.1 50 100 500 Ta=25°C VCE=6V 200 100 50 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE(mA) −50 −100 RATING CHARACTERISTIC CURVES ( CHUMF24PT ) CHDTC114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta =- 40OC O 25 = C 100OC 5 2 1 500m 200m 100m 100 200 500 1m 2m 2m 1m 500 VCC=5V Ta=100OC 25OC -40 OC 200 100 50 20 10 5 2 1 5m 10m 20m 50m 100m 0 0.5 OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1k 2.5 3.0 lO/lI=20 500m Ta=100 C 25OC -40OC 100 50 20 10 5 2 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 2.0 1 VO =5V O 1 100 200 1.5 Fig.4 Output voltage vs. output current 500 200 1.0 INPUT VOLTAGE : VI(off) (V) Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 500 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A)