ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier • +5V Single Positive Supply • MTTF > 100 Years • 16-pin 4x4mm Lead-free/Green/ RoHS-compliant QFN Package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure The ECP200D is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP200D to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc N/C N/C 15 14 13 12 N/C N/C 2 11 RF OUT RF IN 3 10 RF OUT 9 N/C N/C 4 5 6 7 N/C • 18 dB Gain @ 900 MHz 16 Vref 1 Function Vref RF Input RF Output Vbias GND N/C or GND 8 N/C • +51 dBm Output IP3 Vbias • +33 dBm P1dB The ECP200D is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +51 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in an industry standard in a lead-free/ green/RoHS-compliant 16-pin 4x4mm QFN surfacemount package. All devices are 100% RF and DC tested. N/C • 400 – 2300 MHz Functional Diagram N/C Product Description N/C Product Features Product Information Pin No. 1 3 10, 11 16 Backside Paddle 2, 4-9, 12-15 Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm Typ 400 9 +32 +47 Max Parameter 2300 Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. P1dB Output IP3 IS-95A Channel Power 2140 10 20 6.8 +33.2 +48 Units @ -45 dBc ACPR dBm +27.5 dBm +25.3 dB mA V 7.7 800 +5 wCDMA Channel Power @ -45 dBc ACLR 700 Noise Figure Device Bias (3) 900 Typical MHz dB dB dB dBm dBm 900 18 -18 -11 +33 +49 1960 11 -19 -6.8 +33.4 +51 dBm +27 +27.5 dBm dB 2140 10 -20 -6.8 +33.2 +48 +25.3 8.0 7.3 7.7 +5 V @ 800 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 °C. 1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current typically will be 822 mA.) Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Rating -40 to +85 °C -65 to +150 °C +28 dBm +8 V 1400 mA 8W +250 °C Ordering Information Part No. Description 2 Watt, High Linearity InGaP HBT Amplifier ECP200D-G (lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package) ECP200D-PCB900 ECP200D-PCB1960 ECP200D-PCB2140 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 6 April 2006 ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information Typical Device Data S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system) S22 0 2. 4 0. 3. 4 4. 0 4. 0 5 .0 0. 2 10 .0 10.0 5.0 4.0 3. 0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0 0.4 10.0 20 0 5.0 0.2 25 3. 0 30 15 0 -10.0 2 -0. 0 .0 -0 .4 -2 Swp Min 50MHz -1.0 -0. 8 .6 -0 -0.8 Swp Min 50MHz -1.0 -0 .6 -2 .0 .0 .0 .4 -3 2500 - 2050 -4 1050 1550 Frequency (MHz) - 5. 550 3. 0 -0 50 .0 0 -4 2 0 -0. 5 -5. 10 -1 0. Gain (dB) 1.0 0. 8 6 0 2. DB(GMax()) Swp Max 4000MHz 0. DB(|S(2,1)|) 35 0. 6 40 Swp Max 4000MHz 0. 0.8 1.0 S11 Gain / Maximum Stable Gain Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) -0.80 -0.60 -0.64 -0.76 -0.89 -1.08 -1.54 -2.48 -5.25 -16.57 -7.12 -2.68 -1.34 -0.80 -0.49 -0.53 -0.50 S11 (ang) -177.34 178.13 174.02 166.66 158.43 150.86 141.98 131.55 115.96 118.86 -149.33 -169.62 175.50 164.47 154.67 146.29 136.44 S21 (dB) 27.72 22.13 16.20 10.54 7.75 6.09 5.29 5.24 5.83 6.03 3.81 0.37 -3.32 -6.81 -9.46 -12.22 -14.55 S21 (ang) 107.79 96.85 89.13 80.79 72.52 64.42 54.50 41.62 20.85 -9.41 -47.41 -72.56 -89.96 -102.05 -112.59 -121.23 -128.37 S12 (dB) S12 (ang) -45.30 -43.21 -44.86 -42.84 -44.05 -43.61 -42.64 -39.25 -39.43 -37.39 -39.26 -40.69 -45.63 -50.41 -48.80 -50.62 -49.46 S22 (dB) 19.06 11.92 -4.05 6.99 2.89 -7.72 -4.97 -33.49 -52.73 -100.38 -126.48 -169.19 -163.76 149.05 157.02 69.74 79.86 -0.81 -0.79 -0.62 -0.35 -0.47 -0.66 -0.73 -0.82 -0.58 -0.58 -0.42 -0.52 -0.53 -0.61 -0.62 -0.68 -0.77 S22 (ang) -139.65 -158.43 -168.80 -177.29 179.92 179.00 177.98 176.35 175.10 174.84 170.66 169.04 167.35 164.01 162.14 157.85 156.81 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 6 April 2006 ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information 900 MHz Application Circuit (ECP200D-PCB900) Typical RF Performance at 25 °C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 Vsupply = +5V ID=R4 R=0 Ohm 900 MHz 18 dB -18 dB -11 dB +33 dBm ID=C4 C=1e7 pF Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) ID=R2 R=22 Ohm ID=C5 C=1000 pF ID=C7 C=1000 pF ID=C1 C=56 pF ID=C6 C=10 pF 16 TLINP ID=TL1 Z0=50 Ohm L=75 mil Eeff=3.16 Loss=0 F0=0 GHz ID=R3 R=51 Ohm +49 dBm (+17 dBm / tone, 1 MHz spacing) +5.6V Zener ID=R1 R=15 Ohm ID=C11 R=0 Ohm +27 dBm 14 13 1 12 2 11 ID=ECP200D 3 ID=C2 C=56 pF 15 ID=L1 L=18 nH size 1008 4 TLINP ID=TL2 Z0=50 Ohm L=375 mil Eeff=3.16 Loss=0 F0=0 GHz 9 ID=C8 C=8.2 pF 8.0 dB +5 V 800 mA 5 6 ID=C3 C=56 pF 10 7 8 ID=C9 C=10 pF C9 should be placed at silk screen marker "8" on the WJ evaluation board. C8 should be placed at silk screen marker "B" on the WJ evaluation board. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. S11 vs. Frequency 0 19 -5 +25°C 17 +25°C -10 -15 -20 860 -40°C 880 +85°C 900 920 -30 840 940 +25°C 860 34 6 4 2 880 900 -40°C +85°C 920 26 840 940 +25°C 45 40 -40 C 920 940 860 880 900 920 22 940 +85 C 23 24 25 26 27 28 29 24 26 Output Channel Power (dBm) OIP3 vs. Output Power freq. = 900 MHz, 901 MHz, +17 dBm/tone freq. = 900 MHz, 901 MHz, +25° C 55 50 45 35 -40 +25 C -70 40 880 900 Frequency (MHz) 940 -60 +85°C OIP3 (dBm) OIP3 (dBm) 50 920 -50 OIP3 vs. Temperature 55 900 ACPR vs. Channel Power Frequency (MHz) +25° C, +17 dBm/tone 880 +85°C IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz -40 30 OIP3 vs. Frequency 860 860 -40°C Frequency (MHz) 32 Frequency (MHz) 55 940 Circuit boards are optimized at 880 MHz 28 860 920 ACPR (dBc) 8 P1dB (dBm) NF (dB) 36 +25°C 900 P1dB vs. Frequency 10 -40°C 880 -20 840 Frequency (MHz) Noise Figure vs. Frequency OIP3 (dBm) -10 -25 Frequency (MHz) 35 840 +85°C -15 16 0 840 -40°C S22 (dB) 18 15 840 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 20 50 45 40 35 -15 10 35 Temperature (°C) 60 85 12 14 16 18 20 22 Output Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 6 April 2006 ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information 1960 MHz Application Circuit (ECP200D-PCB1960) Typical RF Performance at 25 °C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 Vsupply = +5V ID=R4 R=0 Ohm 1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm ID=C4 C=1e7 pF ID=C6 C=10 pF 16 TLINP ID=TL1 Z0=50 Ohm L=300 mil Eeff=3.16 Loss=0 F0=0 GHz ID=C11 R=0 Ohm Noise Figure Device / Supply Voltage Quiescent Current (1) 14 13 1 12 2 11 3 10 4 9 ID=C8 C=2.2 pF 7.3 dB +5 V 800 mA 15 TLINP ID=TL3 Z0=50 Ohm L=125 mil Eeff=3.16 Loss=0 F0=0 GHz ID=L1 L=18 nH size 1008 ID=ECP200D ID=C2 C=56 pF +27.5 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) ID=C7 C=1000 pF ID=C1 C=56 pF +51 dBm Channel Power ID=R2 R=22 Ohm ID=C5 C=1000 pF ID=R3 R=51 Ohm (+17 dBm / tone, 1 MHz spacing) +5.6V Zener ID=R1 R=15 Ohm 5 6 7 TLINP ID=TL2 Z0=50 Ohm L=100 mil Eeff=3.16 Loss=0 F0=0 GHz 8 ID=C10 C=1.5 pF ID=C9 C=3.9 pF C9 should be placed between silkscreen markers "2" and "3" on the WJ evaluation board. C8 should be placed between silk screen markers "F" and "G" on the WJ evaluation board. C10 should be placed at silkscreen marker "5" on the WJ evaluation board. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. S11 vs. Frequency 0 12 -5 +25°C 10 +25°C -10 -15 -20 1940 -40°C 1950 +85°C 1960 1970 1980 -30 1930 1990 +25°C 1940 34 6 4 2 1950 1960 1970 1990 -40°C +85°C 1980 26 1930 1990 +25°C 45 40 1980 1990 -65 -40 C 1940 1950 1960 1970 1980 22 1990 +25 C +85 C 23 24 25 26 27 28 29 Output Channel Power (dBm) OIP3 vs. Output Power freq. = 1960 MHz, 1961 MHz, +17 dBm/tone freq. = 1960 MHz, 1961 MHz, +25° C 55 50 45 35 -40 1990 -75 40 1950 1960 1970 Frequency (MHz) 1980 -55 +85°C OIP3 (dBm) OIP3 (dBm) 50 1970 -45 OIP3 vs. Temperature 55 1960 ACPR vs. Channel Power Frequency (MHz) +25° C, +17 dBm/tone 1950 +85°C IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz -35 30 OIP3 vs. Frequency 1940 1940 -40°C Frequency (MHz) 32 Frequency (MHz) 55 1980 Circuit boards are optimized at 1960 MHz 28 1940 1970 ACPR (dBc) 8 P1dB (dBm) 36 +25°C 1960 P1dB vs. Frequency 10 -40°C 1950 -20 1930 Frequency (MHz) Noise Figure vs. Frequency NF (dB) -10 -25 Frequency (MHz) OIP3 (dBm) +85°C -15 9 35 1930 -40°C S22 (dB) 11 0 1930 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 13 8 1930 ID=C3 C=56 pF 50 45 40 35 -15 10 35 Temperature (°C) 60 85 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 6 April 2006 ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (ECP200D-PCB2140) Typical RF Performance at 25 °C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 Vsupply = +5V ID=R4 R=0 Ohm 2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm ID=C3 C=1e7 pF ID=C5 C=10 pF 16 TLINP ID=TL1 Z0=50 Ohm L=175 mil Eeff=3.16 Loss=0 F0=0 GHz ID=C11 R=0 Ohm Noise Figure Device / Supply Voltage Quiescent Current (1) 14 13 TLINP ID=TL3 Z0=50 Ohm L=100 mil Eeff=3.16 Loss=0 F0=0 GHz 12 ID=L1 L=18 nH size 1008 11 2 ID=ECP200D 3 10 4 9 ID=C8 C=3 pF 7.7 dB +5 V 800 mA 15 1 ID=C2 C=56 pF +25.3 dBm (@ -45 dBc ACLR) ID=C6 C=1000 pF ID=C1 C=56 pF +48 dBm W-CDMA Channel Power ID=R2 R=22 Ohm ID=C4 C=1000 pF ID=R3 R=51 Ohm (+17 dBm / tone, 1 MHz spacing) +5.6V Zener ID=R1 R=15 Ohm 5 6 7 TLINP ID=TL2 Z0=50 Ohm L=75 mil Eeff=3.16 Loss=0 F0=0 GHz 8 ID=C10 C=1.5 pF ID=C9 C=3 pF C9 should be placed at silkscreen marker "2" on the WJ evaluation board. C8 should be placed at silk screen marker "D" on the WJ evaluation board. C10 should be placed at silkscreen marker "4" on the WJ evaluation board. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. S11 vs. Frequency 0 11 -5 +25°C 9 +25°C -10 -15 -20 2120 -40°C 2130 +85°C 2140 2150 2160 -30 2110 2170 +25°C 2120 34 6 4 2 2130 2140 2150 2170 2160 2170 2140 2150 2160 ACPR vs. Channel Power -40°C +25°C -45 -50 -55 +85°C -40 C +25 C 2120 2130 2140 2150 2160 22 2170 23 24 25 OIP3 vs. Temperature OIP3 vs. Output Power +25° C, +17 dBm/tone freq. = 2140 MHz, 2141 MHz, +17 dBm/tone freq. = 2140 MHz, 2141 MHz, +25° C 55 50 OIP3 (dBm) OIP3 (dBm) 40 45 40 2130 2140 2150 Frequency (MHz) 2160 2170 35 -40 26 27 Output Channel Power (dBm) OIP3 vs. Frequency 45 +85 C -60 Frequency (MHz) 55 2170 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz -35 30 26 2110 2130 +85°C Frequency (MHz) 32 +85°C 50 2120 2120 -40°C -40 Frequency (MHz) 55 2160 Circuit boards are optimized at 2140 MHz 28 2120 2150 ACPR (dBc) 8 P1dB (dBm) 36 +25°C 2140 P1dB vs. Frequency 10 -40°C 2130 -20 2110 Frequency (MHz) Noise Figure vs. Frequency NF (dB) -10 -25 Frequency (MHz) OIP3 (dBm) +85°C -15 8 35 2110 -40°C S22 (dB) 10 0 2110 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 12 7 2110 ID=C3 C=56 pF 50 45 40 35 -15 10 35 Temperature (°C) 60 85 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 5 of 6 April 2006 ECP200D The Communications Edge TM 2 Watt, High Linearity InGaP HBT Amplifier Product Information ECP200D-G Mechanical Information This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Product Marking The component will be marked with an “E200G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “ECP200D” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Land Pattern Mounting Config. Notes 1. 2. 3. 4. 5. 6. 7. 8. Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85 °C 17.5 °C / W 155 °C Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85° C. Tj is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 °C. MTTF vs. GND Tab Temperature 100000 MTTF (million hrs) Thermal Specifications A heatsink underneath the area of the PCB for the mounted device is highly recommended for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. 10000 1000 100 60 70 80 90 100 110 120 Tab Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 6 of 6 April 2006