Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 1/8 CYStech Electronics Corp. NPN AND PNP Dual Epitaxial Planar Transistors HBNP5213N6 Features • High BVCEO • High current • Excellent DC current gain characteristics • Pb-free lead plating and halogen-free package Equivalent Circuit Outline HBNP5213N6 SOT-23-6L C1 B : Base E : Emitter E1 C : Collector C2 B1 E2 B2 Ordering Information Device HBNP5213N6-0-T1-G Package SOT-23-6L (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBNP5213N6 CYStek Product Specification Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) (Note 1) Peak Collector Current (Note 2) Peak Base Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) VCBO VCEO VEBO IC ICP IBP Pd Tj, Tstg Rth,ja Limits NPN 100 80 7 1 2 200 PNP -100 -80 -7 -1 -2 -200 1.14 0.01 -55~+150 110 Unit V V V A A mA W W / °C °C °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature NPN Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) *VCE(SAT) *VBE(SAT) *hFE 1 *hFE 2 fT Cob HBNP5213N6 Min. 100 80 7 180 60 150 - Typ. 0.15 230 6 Max. 100 100 0.3 0.5 1.2 390 15 Unit V V V nA nA V V V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=100V, IE=0 VEB=7V, IC=0 IC=500mA, IB=20mA IC=1A, IB=50mA IC=1A, IB=50mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% CYStek Product Specification Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 3/8 CYStech Electronics Corp. PNP Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 fT Cob Min. -100 -80 -7 180 50 150 - Typ. -0.16 200 11 Max. -100 -100 -0.3 -0.6 -1.2 390 15 Unit V V V nA nA V V V MHz pF Test Conditions IC=-100μA IC=-10mA IE=-10μA VCB=-100V VEB=-7V IC=-500mA, IB=-50mA IC=-700mA, IB=-35mA IC=-1A, IB=-50mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Recommended Soldering Footprint HBNP5213N6 CYStek Product Specification Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 4/8 CYStech Electronics Corp. Q1, NPN Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT VCE=5V Saturation Voltage-(mV) Current Gain---HFE HFE 100 VCE=2V VCE=1V 10 IC=25IB 100 IC=10IB 10 1 10 100 Collector Current ---IC(mA) 1 1000 Saturation Voltage vs Collector Current 1000 10000 VBESAT@IC=10IB VBEON@VCE=2V On Voltage-(mV) Saturation Voltage-(mV) 10 100 Collector Current ---IC(mA) On Voltage vs Collector Current 10000 1000 1000 100 100 1 10 100 1000 10000 1 Collector Current--- IC(mA) 10 100 1000 Collector Current--- IC(mA) 10000 Capacitance Characteristics Transition Frequency vs Collector Current 100 1000 f=1MHz VCE=10V f=1MHz Capacitance---Cob(pF) Transition Frequency---fT(MHz) IC=20IB 100 10 1 10 1 HBNP5213N6 10 100 Collector Current---IC(mA) 1000 0.1 1 10 Collector Base Voltage-- VCB(V) 100 CYStek Product Specification Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 5/8 CYStech Electronics Corp. Q2, PNP Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 100 Saturation Voltage---(mV) Current Gain---HFE VCE=3V VCE=2V VCE=1V VCESAT IC=100IB IC=50IB IC=20IB IC=10IB 1000 100 10 10 1 10 100 Collector Current---IC(mA) 1000 1 Saturation Voltage vs Collector Current 1000 On Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBESAT@IC=10IB 100 VBEON@VCE=3V 100 1 10 100 Collector Current---IC(mA) 1000 1 Transition Frequency vs Collector Current 10 100 Collector Current---IC(mA) 1000 Capacitance Characteristics 1000 100 Collector Output Capacitance---Cob(pF) Transition Frequency---fT(MHz) 10 100 Collector Current---IC(mA) 100 10 1 10 1 HBNP5213N6 10 100 Collector Current---IC(mA) 1000 1 10 100 Reverse-biased Collector Base Voltage---VCB(V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 6/8 Reel Dimension Carrier Tape Dimension HBNP5213N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. HBNP5213N6 CYStek Product Specification Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 8/8 CYStech Electronics Corp. SOT-23-6L Dimension Marking: 5213 Device Code □□□□ Date Code 6Lead SOT-23-6L Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Base 1 Pin 2. Emitter 2 Pin 3. Base 2 Pin 4. Collector 2 Pin 5. Emitter 1 Pin 6. Base 1 Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 DIM A A1 A2 b c D Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 DIM E E1 e e1 L θ Millimeters Min. Max. 1.500 1.700 2.650 2.950 0.950 (BSC) 1.800 2.000 0.300 0.600 0° 8° (B1) (E2) (B2) (C2) (E1) (B1) Inches Min. Max. 0.059 0.067 0.104 0.116 0.037 (BSC) 0.071 0.079 0.012 0.024 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBNP5213N6 CYStek Product Specification