AP3800YT
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
CH-1
G1
30V
RDS(ON)
10.8mΩ
3
Converter Application
▼ RoHS Compliant & Halogen-Free
D2/S1
CH-2
G2
Description
BVDSS
S2
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low onresistance and cost-effectiveness.
ID
BVDSS
RDS(ON)
3
ID
10.3A
30V
8.5mΩ
12.7A
G2
S2
S2
S2
G2 S2 S2 S2
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
S1/D2
D1
G1 D1 D1 D1
.
G1
D1
D1
D1
®
PMPAK 3 x 3
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Units
Rating
CH-1
CH-2
VDS
Drain-Source Voltage
30
30
V
VGS
Gate-Source Voltage
+20
+20
V
ID@TC=25℃
Drain Current (Chip Limited)
37
44
A
ID@TA=25℃
3
Drain Current , VGS @ 10V
10.3
12.7
A
ID@TA=70℃
3
8.3
10.2
A
40
40
A
1.9
2.2
W
Drain Current , VGS @ 10V
Pulsed Drain Current
IDM
1
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rating
CH-1
CH-2
5
4.5
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
65
55
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient4
180
145
℃/W
Data & specifications subject to change without notice
℃/W
1
201504272
AP3800YT
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=10A
-
9
10.8
mΩ
VGS=4.5V, ID=5A
-
13
16
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.7
3
V
gfs
Forward Transconductance
VDS=5V, ID=10A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
7.5
12
nC
Qgs
Gate-Source Charge
VDS=24V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1184
pF
Coss
Output Capacitance
VDS=25V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3.6
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
12
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
nC
2
AP3800YT
o
CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=12A
-
6.5
8.5
mΩ
VGS=4.5V, ID=6A
-
8.9
12.9
mΩ
1.25
1.4
3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
Max. Units
gfs
Forward Transconductance
VDS=5V, ID=12A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
9.5
15.2
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
13
-
ns
Ciss
Input Capacitance
VGS=0V
-
910
1456
pF
Coss
Output Capacitance
VDS=25V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=12A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=12A, VGS=0V,
-
12
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
4
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec.
4.Surface mounted on min. copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP3800YT
Channel-1
40
40
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
20
10
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
16
I D =10A
V G =10V
I D =5A
14
12
.
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
1.6
1.2
0.8
10
0.4
8
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D =250uA
1.6
Normalized VGS(th)
IS(A)
8
6
T j =25 o C
T j =150 o C
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP3800YT
Channel-1
10
f=1.0MHz
1000
8
800
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =5A
V DS =24V
6
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
1
16
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
100us
1ms
.
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=180 oC/W
DC
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
12
V DS =5V
10
ID , Drain Current (A)
ID , Drain Current (A)
50
40
30
20
8
6
4
T j =150 o C
T j =25 o C
10
2
o
T j = -55 C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
5
AP3800YT
Channel-2
40
40
10V
7.0V
6.0V
5.0V
4.0V
V G =3.0V
30
20
10
30
20
10
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
2.0
10
I D =12A
V G =10V
I D =6A
T A =25 o C
1.6
8
.
Normalized RDS(ON)
9
RDS(ON) (mΩ)
10V
7.0V
6.0V
5.0V
4.0V
V G =3.0V
o
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 o C
1.2
0.8
7
0.4
6
2
4
6
8
-100
10
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I D =250uA
10
Normalized VGS(th)
1.6
IS(A)
8
T j =25 o C
T j =150 o C
6
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP3800YT
Channel-2
10
1000
8
C iss
800
6
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
I D =6A
V DS =24V
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
20
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
100us
1ms
.
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=145 oC/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
60
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
50
40
30
20
T j =150 o C
12
8
4
T j =25 o C
10
T j = -55 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Drain Current v.s. Ambient
Temperature
7
AP3800YT
MARKING INFORMATION
Part Number
3800
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
8