Data Sheet -100mA/-50V Digital transistors(with built-in resistors) DTA043ZM / DTA043ZEB / DTA043ZUB Dimensions (Unit : mm) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See Equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. VMT3 Abbreviated symbol : 32 EMT3F (3) (1) Structure PNP epitaxial planar silicon transistor (Resistor built-in type) (2) Abbreviated symbol : 32 UMT3F 2.0 0.9 (1) 0.65 0.65 1.3 0.53 2.1 1.25 (3) 0.425 Applications Inverter, Interface, Driver 0.53 0.425 0.32 (2) 0.13 Abbreviated symbol : 32 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTA043ZM DTA043ZEB DTA043ZUB Equivalent circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - - ○ ○ - OUT OUT R R11 ININ RR22 GND(+) GND(+) OUT OUT ININ GND(+) GND(+) R 1=4.7kΩ, R2=47kΩ Absolute maximum (Ta=25℃) Parameter Symbol Supply voltage VCC Input voltage VIN Collector current *1 Output current Power dissipation *2 Junction temperature Range of storage temperature M Limits(DTA043Z□) EB UB -50 -30 5 -100 -100 IC(max) IO PD Tj Tstg 150 200 150 -55 to +150 Unit V V V mA mA mW ℃ ℃ *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.09 - Rev.A Data Sheet DTA043ZM / DTA043ZEB / DTA043ZUB Electrical characteristics (Ta=25℃) Parameter Symbol Input voltage Output voltage Min. Typ. VI(off) - - -0.5 V VCC=-5V / IO=-100uA VI(on) -1.1 - - V VO=-0.3V / IO=-5mA VO(on) - -0.07 -0.15 V IO=-5mA / II=-0.5mA II - - -1.8 mA VI=-5V VCC=-50V / VI=0V Input current Max. Test Conditions Unit IO(off) - - -500 nA DC current gain GI 80 - - - VO=-10V / IO=-5mA Transition frequency * fT - 250 - MHz VCE=-10V /IE=5mA f=100MHz Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 8 10 12 - Output current * Characteristics of built-in transistor Electrical characteristics curves -10 -100 VCC=-5V OUTPUT CURRENT : IO (mA) INPUT VOLTAGE : VI(on) (V) VO=-0.3V -10 Ta=-40ºC Ta=25ºC Ta=75ºC Ta=125ºC -1 -0.1 -0.1 -1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC -0.1 -0.01 -0.001 -1 -10 -100 0 -0.5 OUTPUT CURRENT : IO (mA) Fig.1 Input Voltage vs. Output Current -2.5 -3 -1 VO=-10V Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI -2 (OFF characteristics) 1000 10 1 -0.1 -1.5 Fig.2 Input Voltage vs. Output Current (ON characteristics) 100 -1 INPUT VOLTAGE : V I(off) (V) -1 -10 -0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC -0.01 -0.001 -0.1 -100 -1 -10 -100 OUTPUT CURRNET : IO (mA) OUTPUT CURRENT : IO (mA) Fig.3 DC Current Gain vs. Output Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. IO/II=10 Fig.4 Output Voltage vs. Output Current 2/2 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A