NCP59749 3.0 A, Dual-Rail Very Low‐Dropout Linear Regulator with Programmable Soft‐Start http://onsemi.com The NCP59749 is dual−rail very low dropout voltage regulator that is capable of providing an output current in excess of 3.0 A with a dropout voltage of 120 mV typ. at full load current. The devices are stable with ceramic and any other type of output capacitor ≥ 2.2 mF. This series contains adjustable output voltage version with output voltage down to 0.8 V. Internal protection features consist of built−in thermal shutdown and output current limiting protection. User−programmable Soft−Start and Power Good pins are available. The NCP59749 is available in QFN20 5x5 package. QFN20 CASE 485DB NC NC OUT Output Current in Excess of 3.0 A VIN Range: 0.8 V to 5.5 V VBIAS Range: 2.7 V to 5.5 V Output Voltage Range: 0.8 V to 3.6 V Dropout Voltage: 120 mV at 3 A Programmable Soft Start Open Drain Power Good Output Fast Transient Response Stable with Any Type of Output Capacitor ≥ 2.2 mF Current Limit and Thermal Shutdown Protection These are Pb−Free Devices 5 4 3 2 1 IN 6 20 OUT IN 7 19 OUT IN 8 18 OUT PG 9 17 NC BIAS 10 16 FB GND SS NC NC EN 11 12 13 14 15 GND • • • • • • • • • • • NC Features IN PIN CONNECTIONS QFN20, 5x5, 0.65P MARKING DIAGRAM 1 Applications • Consumer and Industrial Equipment Point of Load Regulation • FPGA, DSP and Logic Power Supplies • Switching Power Supply Post Regulation XXXXXXXX XXXXXXXX AWLYYWWG G QFN20 XXXXX = Specific Device Code A = Assembly Location L/WL = Wafer Lot Y/YY = Year W/WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) NCP59749 Figure 1. Typical Application Schematic ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 0 1 Publication Order Number: NCP59749/D NCP59749 Figure 2. Simplified Schematic Block Diagram Table 1. PIN FUNCTION DESCRIPTION Name QFN−20 Description IN 5−8 EN 11 Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. This pin must not be left floating. SS 15 Soft-Start pin. A capacitor connected on this pin to ground sets the start-up time. If this pin is left floating, the regulator output soft-start ramp time is typically 200 ms. BIAS 10 Bias input voltage for error amplifier, reference, and internal control circuits. PG 9 Power-Good (PG) is an open-drain, active-high output that indicates the status of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a high-impedance state. When VOUT is below this threshold the pin is driven to a low-impedance state. A pull-up resistor from 10 kW to 1 MW should be connected from this pin to a supply up to 5.5 V. The supply can be higher than the input voltage. Alternatively, the PG pin can be left floating if output monitoring is not necessary. FB 16 This pin is the feedback connection to the center tap of an external resistor divider network that sets the output voltage. This pin must not be left floating. OUT 1, 18−20 Regulated output voltage. A small capacitor (total typical capacitance ≥ 2.2 mF, ceramic) is needed from this pin to ground to assure stability. NC GND PAD/TAB Unregulated input to the device. 2−4, 13, 14, 17 No connection. This pin can be left floating or connected to GND to allow better thermal contact to the top-side plane. 12 Ground Should be soldered to the ground plane for increased thermal performance http://onsemi.com 2 NCP59749 Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Input Voltage Range VIN −0.3 to +6 V Input Voltage Range VBIAS −0.3 to +6 V Enable Voltage Range VEN −0.3 to +6 V Power-Good Voltage Range VPG −0.3 to +6 V PG Sink Current IPG 0 to +1.5 mA SS Pin Voltage Range VSS −0.3 to +6 V Feedback Pin Voltage Range VFB −0.3 to +6 V Output Voltage Range VOUT −0.3 to (VIN + 0.3) ≤ 6 V Maximum Output Current IOUT Internally Limited PD See Thermal Characteristics Table and Formula Output Short Circuit Duration Indefinite Continuous Total Power Dissipation Maximum Junction Temperature TJMAX +125 °C Storage Junction Temperature Range TSTG −55 to +150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22-A114 ESD Machine Model tested per EIA/JESD22-A115 Latch-up Current Maximum Rating tested per JEDEC standard: JESD78. Table 3. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient (Note 5) RqJA 30.5 °C/W Thermal Resistance, Junction−to−Case (bottom) (Note 6) RqJC 4.1 °C/W Thermal Characteristics, QFN20, 5x5, 0.65P package 3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 4. Thermal data are derived by thermal simulations based on methodology specified in the JEDEC JESD51 series standards. The following assumptions are used in the simulations: − This data was generated with only a single device at the center of a high−K (2s2p) board with 3 in x 3 in copper area which follows the − JEDEC51.7 guidelines. − The exposed pad is connected to the PCB ground layer through a 4x4 thermal via array. Vias are 0.3 mm diameter, plated. − Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage. 5. The junction−to−ambient thermal resistance under natural convection is obtained in a simulation on a high−K board, following the JEDEC51.7 guidelines with assumptions as above, in an environment described in JESD51−2a. 6. The junction−to−case (bottom) thermal resistance is obtained by simulating a cold plate test on the IC exposed pad. Test description can be found in the ANSI SEMI standard G30−88. Table 4. RECOMMENDED OPERATING CONDITIONS (Note 7) Symbol Min Max Unit Input Voltage VIN VOUT + VDO 5.5 V Bias Voltage VBIAS 2.7 5.5 V TJ −40 125 °C Rating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 7. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. http://onsemi.com 3 NCP59749 Table 5. ELECTRICAL CHARACTERISTICS (At VEN = 1.1 V, VIN = VOUT + 0.3 V, CBIAS = 0.1 mF, CSS = 1 nF, CIN = COUT = 10 mF, IOUT = 50 mA, VBIAS = 5.0 V, TJ = −40°C to +125°C, unless otherwise noted. Typical values are at TJ = +25°C.) Symbol VIN Parameter Test Conditions Input Voltage Range Min Typ VOUT +VDO Unit 5.5 V VBIAS Bias Pin Voltage Range 5.5 V UVLO Undervoltage Lock-out VBIAS rising Hysteresis 1.2 1.6 0.4 1.9 V VREF Internal Reference (Adj.) TJ = +25°C 0.798 0.802 0.806 V VOUT Output Voltage Range VIN = 5 V, IOUT = 3.0 A VREF 3.6 V Accuracy (Note 1) VOUT + 2.2 V < VBIAS < 5.5 V, 50 mA < lOUT < 3.0 A ±0.5 +2 % VOUT/VIN Line Regulation VOUT (NOM) + 0.3 < VIN < 5.5 V 0.03 %/V VOUT/IOUT Load Regulation 50mA < IOUT < 3.0 A 0.09 %/A VIN Dropout Voltage (Note 2) IOUT = 3.0 A, VBIAS - VOUT (NOM) ≥ 3.25 V (Note 3) 120 280 mV VBIAS Dropout Voltage (Note 2) IOUT = 3.0 A, VIN = VBIAS 1.31 1.75 V Current Limit VOUT = 80% x VOUT (NOM) 4.6 6.0 A 1 2 mA 1 50 mA 0.15 1 VDO ICL IBIAS Bias Pin Current ISHDN Shutdown Supply Current (IGND) IFB PSRR 2.7 Max Power-supply Rejection (VBIAS to VOUT) 3.8 VEN ≤ 0.4 V Feedback Pin Current Power-supply Rejection (VIN to VOUT) -2 -1 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 60 300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 30 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50 300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 30 mA dB dB Noise Output Noise Voltage 100 Hz to 100 kHz, lOUT = 3 A tSTRT Minimum Startup Time RLOAD for IOUT = 1.0 A, CSS = open 200 ms Soft-start Charging Current VSS = 0.4 V 0.44 mA ISS 25 x VOUT VEN, HI Enable Input High Level 1.1 0 VEN, LO Enable Input Low Level VEN, HYS Enable Pin Hysteresis VEN, DG Enable Pin Deglitch Time 5.5 0.4 50 Enable Pin Current VEN = 5 V VIT PG Trip Threshold VOUT decreasing VHYS PG Trip Hysteresis 85 PG Output Low Voltage IPG = 1 mA (Sinking), VOUT < VIT IPG, LKG PG Leakage Current VPG = 5.25 V, VOUT > VIT Thermal Shutdown Temperature Shutdown, temperature increasing Reset, temperature decreasing V ms 0.1 1 mA 90 94 %VOUT 3 VPG, LO V mV 20 IEN TSD mVRMS 0.1 +165 +140 %VOUT 0.3 V 1 mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Adjustable devices tested at VREF; external resistor tolerance is not taken into account. 2. Dropout is defined as the voltage from the input to VOUT when VOUT is 3% below nominal. 3. 3.25 V is a test condition of this device and can be adjusted by referring to Figure 8. http://onsemi.com 4 NCP59749 TYPICAL CHARACTERISTICS 0.20 0.5 0.15 0.4 0.10 −40°C +125°C 0.05 0 CHANGE IN VOUT (%) CHANGE IN VOUT (%) At TJ = +25°C, VIN = VOUT(TYP) + 0.3 V, VBIAS = 5 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 4.7 mF, and COUT = 10 mF, unless otherwise noted. +25°C −0.05 −0.10 −0.15 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 −0.1 −0.3 1.5 2.0 2.5 3.0 3.5 Figure 3. VIN Line Regulation Figure 4. VBIAS Line Regulation 0.3 0.2 CHANGE IN VOUT (%) 0.4 +125°C 0.1 +25°C 0 −0.1 −0.2 −0.3 −40°C 10 20 30 40 50 +125°C 0.1 +25°C 0 −0.1 −0.2 −0.3 −40°C 0 0.5 1.0 1.5 2.0 2.5 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (A) Figure 5. Load Regulation Figure 6. Load Regulation 100 +125°C 80 +25°C 60 −40°C 40 20 1.0 1.5 2.0 2.5 3.0 3.0 500 450 IOUT = 3 A 400 350 300 250 200 +25°C 150 +125°C 100 50 0 −40°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IOUT, OUTPUT CURRENT (A) VBIAS − VOUT (V) Figure 7. VIN Dropout Voltage vs. IOUT and Temperature TJ Figure 8. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ http://onsemi.com 5 4.0 0.2 −0.4 −0.5 120 0.5 1.0 VBIAS − VOUT (V) 0.3 0 0.5 VIN − VOUT (V) 0.4 0 +25°C −0.2 0.5 0 +125°C −40°C 0.1 0.5 −0.4 −0.5 VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) 0 0.2 −0.4 −0.5 VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) CHANGE IN VOUT (%) −0.20 0.3 4.5 NCP59749 TYPICAL CHARACTERISTICS VDO (VBIAS − VOUT) DROPOUT VOLTAGE (mV) VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) At TJ = +25°C, VIN = VOUT(TYP) + 0.3 V, VBIAS = 5 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 4.7 mF, and COUT = 10 mF, unless otherwise noted. 1400 200 180 IOUT = 0.5 A 1300 160 1200 140 −40°C 120 +25°C 100 60 40 20 0 0.5 1.0 1.5 +25°C 1000 +125°C 80 −40°C 1100 2.0 2.5 3.0 3.5 4.0 4.5 VBIAS − VOUT (V) +125°C 900 800 700 600 0 2000 1800 1800 −40°C 1000 800 −40°C 1000 800 600 400 400 200 200 0 0 0.5 1.5 1.0 2.0 2.5 3.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IOUT, OUTPUT CURRENT (A) VBIAS (V) Figure 11. BIAS Pin Current vs. IOUT and Temperature TJ Figure 12. BIAS Pin Current vs. VBIAS and Temperature TJ 0.500 5.5 VPG,LO, L−LEVEL PG VOLTAGE (V) 1.0 0.475 0.450 ISS (mA) 3.0 +125°C 1200 600 0 2.5 +25°C 1400 IBIAS (mA) 1200 IBIAS (mA) 1600 +25°C +125°C 2.0 Figure 10. VBIAS Dropout Voltage vs. IOUT and Temperature TJ 2000 1400 1.5 1.0 IOUT, OUTPUT CURRENT (A) Figure 9. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ 1600 0.5 0.425 0.400 0.375 0.350 0.325 0.300 −50 −25 0 25 50 75 100 125 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (°C) IPG, PG PIN CURRENT (mA) Figure 13. Soft Start Charging Current ISS vs. Temperature TJ Figure 14. L−level PG Voltage vs. Current http://onsemi.com 6 12 NCP59749 TYPICAL CHARACTERISTICS At TJ = +25°C, VIN = VOUT(TYP) + 0.3 V, VBIAS = 5 V, IOUT = 50 mA, VEN = VIN, CIN = 1 mF, CBIAS = 4.7 mF, and COUT = 10 mF, unless otherwise noted. ICL, CURRENT LIMIT (A) 6.0 +25°C −40°C 5.0 +125°C 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VBIAS − VOUT (V) Figure 15. Current Limit vs. (VBIAS − VOUT) http://onsemi.com 7 5.0 NCP59749 APPLICATIONS INFORMATION example), the recommended CIN and CBIAS value is 1 mF or greater. Ceramic or other low ESR capacitors are recommended. For the best performance all the capacitors should be connected to the NCP59749 respective pins directly in the device PCB copper layer, not through vias having not negligible impedance. The NCP59749 dual−rail very low dropout voltage regulator is using NMOS pass transistor for output voltage regulation from VIN voltage. All the low current internal controll circuitry is powered from the VBIAS voltage. The use of an NMOS pass transistor offers several advantages in applications. Unlike a PMOS topology devices, the output capacitor has reduced impact on loop stability. Vin to Vout operating voltage difference can be very low compared with standard PMOS regulators in very low Vin applications. The NCP59749 offers programmable smooth monotonic start-up. The controlled voltage rising limits the inrush current what is advantageous in applications with large capacitive loads. The Voltage Controlled Soft Start timing is programmable by external Css capacitor value. The Enable (EN) input is equipped with internal hysteresis and deglitch filter. Open Drain type Power Good (PG) output is available for Vout monitoring and sequencing of other devices. NCP59749 is a Adjustable linear regulator. The required Output voltage can be adjusted by two external resistors. Typical application schematics is shown in Figure 16. Enable Operation The enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. If the enable function is not to be used then the pin should be connected to VIN or VBIAS. Output Noise When the NCP59749 device reaches the end of the Soft−Start cycle, the Soft Start capacitor is switched to serve as a Noise filtering capacitor. Output Voltage Adjust The output voltage can be adjusted from 0.8 V to 3.6 V using resistors divider between the output and the FB input. Recommended resistor values for frequently used voltages can be found in the Table 6. NCP59749 V OUT + 0.8 Programmable Soft−Start The Soft-Start ramp time depends on the Soft Start charging current ISS, Soft-Start capacitor value CSS and internal reference voltage VREF. The Soft –Start time can be calculated using following equations: tss = CSS x (VREF / ISS) [s, F,V,A] or in more practical units tSS = CSS x 0.8V / 0.44 = CSS x 1.82 where tss = Soft−Start time in miliseconds CSS = Soft−Start capacitor value in nano Farads Capacitor values for frequently used Soft-Start times can be found in the Table 7. The maximal recommended value of CSS capacitor is 15 nF. For higher CSS values the capacitor full discharging before new Soft-Start cycle is not guaranteed. ǒ1 ) R 1ńR 2Ǔ Figure 16. Typical Application Schematics Dropout Voltage Because of two power supply inputs VIN and VBIAS and one VOUT regulator output, there are two Dropout voltages specified. The first, the VIN Dropout voltage is the voltage difference (VIN – VOUT) when VOUT starts to decrease by percents specified in the Electrical Characteristics table. VBIAS is high enough, specific value is published in the Electrical Characteristics table. The second, VBIAS dropout voltage is the voltage difference (VBIAS – VOUT) when VIN and VBIAS pins are joined together and VOUT starts to decrease. Current Limitation The internal Current Limitation circuitry allows the device to supply the full nominal current and surges but protects the device against Current Overload or Short. Thermal Protection Internal thermal shutdown (TSD) circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When TSD activated , the regulator output turns off. When cooling down under the low temperature threshold, device output is activated again. This TSD feature is provided to prevent failures from accidental overheating. Input and Output Capacitors The device is designed to be stable for all available types and values of output capacitors ≥ 2.2 mF. The device is also stable with multiple capacitors in parallel, which can be of any type or value. In applications where no low input supplies impedance available (PCB inductance in VIN and/or VBIAS inputs as http://onsemi.com 8 NCP59749 Table 6. RESISTOR VALUES FOR PROGRAMMING THE OUTPUT VOLTAGE Table 7. CAPACITOR VALUES FOR PROGRAMMING THE SOFT−START TIME VOUT (V) R1 (kW) R2 (kW) Soft−Start Time CSS 0.8 Short Open 0.2 ms Open 0.9 0.619 4.99 0.5 ms 270 pF NOTE: 1.0 1.13 4.53 1 ms 560 pF 1.05 1.37 4.33 5 ms 2.7 nF 1.1 1.87 4.99 10 ms 5.6 nF 1.2 2.49 4.99 18 ms 10 nF 1.5 4.12 4.75 1.8 3.57 2.87 2.5 3.57 1.69 3.3 3.57 1.15 VOUT = 0.8 x (1 + R1/R2) Resistors in the table are standard 1% types Table 8. ORDERING INFORMATION Device NCP59749MN2ADJTBG Output Current Output Voltage Junction Temp. Range Package Shipping 3.0 A ADJ −40°C to +125°C QFN20 3000 / Tape & Reel http://onsemi.com 9 NCP59749 PACKAGE DIMENSIONS QFN20 5x5, 0.65P CASE 485DB ISSUE O PIN ONE REFERENCE ÉÉ ÉÉ A B D L L1 E DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS 0.15 C 0.15 C 0.10 C NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. OPTIONAL FEATURES. L DIM A A1 A3 b D D2 E E2 e L L1 TOP VIEW A (A3) DETAIL B DETAIL B 0.08 C A1 NOTE 5 NOTE 4 ALTERNATE CONSTRUCTION C SIDE VIEW 0.10 DETAIL A 6 D2 M SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 −−− 0.05 0.20 REF 0.25 0.35 5.00 BSC 3.05 3.25 5.00 BSC 3.05 3.25 0.65 BSC 0.45 0.65 −−− 0.15 RECOMMENDED SOLDERING FOOTPRINT* C A B L 20X 0.10 M 5.30 3.30 C A B 20X 0.78 11 E2 1 16 e BOTTOM VIEW 3.30 20X b 0.10 M C A B 0.05 M C NOTE 3 PACKAGE OUTLINE 5.30 0.65 PITCH 20X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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