Comset BD241 Medium power linear and switching application Datasheet

NPN BD241 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD242, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IB = 0)
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
VEBO
Emitter-Base Voltage (IC = 0)
IC
Collector Current
IB
Base Current
PT
TJ
TS
Value
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
Power Dissipation
Junction Temperature
Storage Temperature
45
60
80
100
55
70
90
115
5.0
3
5
1
2
40
150
-65 to +150
Unit
V
V
V
A
A
W
W
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-amb
RthJ-case
Ratings
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
23/10/2012
COMSET SEMICONDUCTORS
Value
Unit
62.5
3.13
°C/W
°C/W
1/3
NPN BD241 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO
IEBO
Ratings
Test Condition(s)
Collector Cutoff Current
Emitter Cutoff Current
VCE=30 V
VCE=30 V
VCE=60 V
VCE=60 V
VBE=5 V
VCE=55 V
VCE=70 V
VCE=90 V
VCE=115 V
ICES
Collector Cutoff Current
(VBE = 0)
VCEO(sus)
Collector-Emitter Sustaining
IC =30mA
Voltage (IB = 0) (*)
VCE=4 V, IC=1 A
hFE
DC Current Gain (*)
VCE=4 V, IC=3 A
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=3 A, IB=0.6 A
VBE(on)
Base-Emitter Voltage (*)
VCE=4 V, IC=3 A
VCE=10 V
IC=0.5 A
f = 1KHz
hfe
Small Signal Current Gain
VCE=10 V
IC=0.5 A
f = 1MHz
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
Min
Typ
45
60
80
100
-
25
Max
Unit
0.3
mA
1.0
mA
0.2
mA
V
-
-
10
-
-
-
-
1.2
V
-
-
1.8
V
-
-
-
-
20
3
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
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NPN BD241 – A – B – C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
23/10/2012
[email protected]
COMSET SEMICONDUCTORS
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