DCR840F DCR840F Phase Control Thyristor Preliminary Information DS5521-1.1 February 2002 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 4800V ■ High Surge Capability IT(AV) 840A ITSM 10,000A dVdt* 1000V/µs dI/dt 300A/µs ■ Low Turn-on Losses APPLICATIONS ■ High Power Converters *Higher dV/dt selections available ■ High Voltage Power Supplies ■ DC Motor Control VOLTAGE RATINGS Type Number DCR840F48 DCR840F46 DCR840F44 DCR840F42 Repetitive Peak Voltages VDRM VRRM V Conditions 4800 4600 4400 4200 Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Outline type code: F See Package Details for further information. Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR840F48 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR840F CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 840 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 1320 A Continuous (direct) on-state current - 1220 A 610 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 950 A Continuous (direct) on-state current - 830 A Conditions Max. Units 670 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise. Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 1050 A Continuous (direct) on-state current - 940 A 470 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 740 A Continuous (direct) on-state current - 630 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR840F SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 10 kA VR = 50% VRRM - 1/4 sine 0.5 x 106 A2s 10ms half sine; Tcase = 125oC 12.5 kA VR = 0 0.78 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.022 o Anode dc - 0.038 o Cathode dc - 0.052 o C/W Double side - 0.004 o C/W Single side - 0.008 o C/W On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 18.0 22.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 19.5kN with mounting compound C Virtual junction temperature C C kN 3/9 www.dynexsemi.com DCR840F DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 100 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 1000 V/µs - 150 A/µs Rate of rise of on-state current From 67% VDRM to 1000A Gate source 1.5A tr = 0.5µs. Tj = 125oC. Repetitive 50Hz dI/dt Non-repetitive - 300 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.3 V rT On-state slope resistance At Tvj = 125oC - 0.92 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω Rise time 0.5µs, Tj = 25oC - 1.8 µs tq Turn-off time VRM = 50V, dIRR/dt = 10A/µs, VDR = 50% VDRM, dVDR/dt = 20V/µs linear 600 - µs IL Latching current Tj = 25oC, VD = 5V - 1000 mA IH Holding current Tj = 25oC, Rg-k = ∞ - 500 mA Max. Units VT(TO) IT = 1000A, tp = 1ms, Tj = 125˚C, GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.5 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 200 mA VGD Gate non-trigger voltage At 67% VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table, gate characteristics curve 150 W PG(AV) Mean gate power 10 W 4/9 www.dynexsemi.com DCR840F CURVES 3000 2500 2400 2000 Instantaneous on-state current, IT - (A) Tj = 125˚C 2800 Maximum Minimum 2600 Mean power dissipation - (W) 2200 2000 1800 1600 1400 1200 1000 dc 1/2 wave 3 phase 6 phase 1500 1000 800 500 600 400 200 0 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 4.2 0 0 100 200 300 400 500 600 700 800 900 1000 Mean on-state current, IT(AV) - (A) Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 6.698580464 B = –1.571103736 C = –0.001210868 D = 0.239948957 these values are valid for Tj = 125˚C for IT 300A to 3000A 5/9 www.dynexsemi.com DCR840F 10000 1000 Maximum Minimum Reverse recovery current, Irr - (A) Reverse recovery charge, Qrr - (µC) Maximum Minimum 1000 100 100 1 10 Rate of rise of on-state current, dI/dt - (A/µs) 10 1 100 10 Rate of rise of on-state current, dI/dt - (A/µs) Fig.4 Recovered charge Pulse width µs 400 150 125 100 25 - 10 r lim it Tj = 125˚C pe Up 95% 1 VGD Lo 0.1 0.001 0.01 r we lim it 5 % Tj = 25˚C Tj = -40˚C Gate trigger voltage, VGT - (V) 100 150 150 150 50 - 0W 10 W 50 50 150 150 150 150 20 0.1 Table gives pulse power PGM in Watts W 20 W 10 5W 100 200 500 1ms 10ms Frequency Hz Fig.5 Reverse recovery current Region of certain triggering 0.1 1 Gate trigger current, IGT - (A) Fig.6 Gate characteristics 10 Thermal Impedance - Junction to case - (˚C/W) 100 100 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 Anode side 0.038 0.040 0.042 0.043 Anode side cooled Double side cooled 0.01 0.001 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.6 Transient thermal impedance - junction to case 6/9 www.dynexsemi.com DCR840F 30 1.2 14 Surge current (VR = 0) 1.0 20 0.8 Peak half sine wave on-state current - (kA) 25 10 15 0.6 10 0.4 ITSM (VR = 0) 5 ITSM (VR = 50% VRRM) 0.2 I2t value - (A2s x 106) Peak half sine on-state current - (kA) Surge current (VR = 50% VRRM) 12 8 6 4 2 I2t (VR = 0) I2t (VR = 50% VRRM) 1 2 3 4 5 6 7 8 9 Pulse length, half sine wave - (ms) Fig.7 Sub-cycle surge currents 10 0 0 0 10 20 30 40 Number of cycles @ 50Hz 50 60 Fig.8 Multi-cycle surge currents 7/9 www.dynexsemi.com DCR840F PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode tab Cathode Ø76 max Ø48 nom 27.0 25.4 Ø1.5 Gate Ø48 nom Anode Nominal weight: 450g Clamping force: 19.5kN ± 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F 8/9 www.dynexsemi.com DCR840F POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE CENTRE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5521-1 Issue No. 1.1 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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