LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Rev. V1 Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Package Outline Broadband linear operation 500 MHz to 1400 MHz RoHS Compliant Absolute Maximum Ratings @ 25°C Symbol Rating Units Drain-Source Voltage Parameter VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 0.7 A Power Dissipation PD 8 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C LETTER DIM. Thermal Resistance θJC 21.8 °C/W A 20.70 B 14.35 C Typical Device Impedance F (MHz) ZIN (Ω) ZLOAD (Ω) 500 10.0 - j41.5 40.0 +j53.0 1000 4.2 - j12.0 11.85 + j33.0 1400 3.5 - j1.0 7.5 + j23.3 VDD = 28V, IDQ = 25mA, POUT = 2.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. MILLIMETERS MIN MAX MIN INCHES MAX 20.96 .815 .825 14.61 .565 .575 13.72 14.22 .540 .560 D 6.27 6.53 .247 .257 E 6.22 6.48 .245 .255 F 6.22 6.48 .245 .255 G H 1.14 2.92 1.40 3.18 .045 .115 .055 .125 J 1.40 1.65 .055 .065 K 1.96 2.46 .077 .097 L M 3.61 .08 4.37 .15 .142 .003 .172 .006 Electrical Characteristics @ 25°C 1 Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BVDSS 65 - V VGS = 0.0 V , IDS = 1.0 mA Drain-Source Leakage Current IDSS - 0.5 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 0.5 µA VGS = 20.0 V , VDS = 0.0 V Gate Threshold Voltage VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 5.0 mA Forward Transconductance GM 40 - mS VDS = 28.0 V , IDS = 50.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 3.5 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 3.75 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 1.2 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz Drain Efficiency ŋD 40 - % VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz Load Mismatch Tolerance VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Rev. V1 Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F =1.0MHz 3 4 POWER OUTPUT (W) CAPACITANCE (pF) 5 COSS 3 CISS 2 1 POWER OUTPUT VS VOLTAGE F =1.0GHz PIN=2.0 W IDQ=25 mA CRSS 2 1 0 0 5 10 15 20 25 5 30 10 GAIN VS FREQUENCY VDD=28 V IDQ=25.0 mA POUT=2.0 W EFFICIENCY (%) GAIN (dB) 25 10 5 35 700 1000 45 42 39 36 500 0 1400 750 1000 1250 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =25.0 mA POWER OUTPUT (W) 4 3 1000 MHz 500MHz 1400 MHz 2 1 0 0 0.05 0.1 0.2 0.3 0.4 0.5 POWER INPUT (W) 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 30 EFFICIENCY VS FREQUENCY VDD =28 V IDQ =25.0 mA Pout =2.0 W 48 15 500 20 VDS (V) VPS (v) 20 15 1400 LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Rev. V1 TEST FIXTURE CIRCUIT DIMENSIONS TEST FIXTURE ASSEMBLY 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. 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