PHILIPS BUK215-50YT Topfet high side switch smd version Datasheet

Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
BUK215-50YT
QUICK REFERENCE DATA
SYMBOL
PARAMETER
IL
Nominal load current (ISO)
SYMBOL
PARAMETER
VBG
IL
Tj
RON
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
Tj = 25˚C
MIN.
UNIT
9
A
MAX.
UNIT
50
20
150
38
V
A
˚C
m
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Latched overtemperature
protection
Load current limiting
Latched short circuit load
protection
Overvoltage and undervoltage
shutdown with hysteresis
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
FUNCTIONAL BLOCK DIAGRAM
BATT
STATUS
POWER
MOSFET
INPUT
CONTROL &
PROTECTION
CIRCUITS
LOAD
RG
GROUND
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN
PIN CONFIGURATION
SYMBOL
DESCRIPTION
mb
1
Ground
2
Input
I
3
(connected to mb)
S
4
Status
5
Load
L
4 5
Fig. 2.
mb
TOPFET
HSS
G
3
1 2
B
Fig. 3.
Battery
June 2000
1
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VBG
Continuous supply voltage
MIN.
MAX.
UNIT
0
50
V
IL
Continuous load current
Tmb 95˚C
-
20
A
PD
Total power dissipation
Tmb 25˚C
-
67
W
Tstg
Storage temperature
Tj
Continuous junction temperature1
Tsold
Mounting base temperature
-55
175
˚C
-
150
˚C
-
260
˚C
-
16
32
V
V
3.2
-
k
-5
5
mA
-50
50
mA
-
150
mJ
MIN.
MAX.
UNIT
-
2
kV
during soldering
Reverse battery voltages2
-VBG
-VBG
Continuous reverse voltage
Peak reverse voltage
Application information
RI, RS
External resistors3
to limit input, status currents
Input and status
II, IS
Continuous currents
II, IS
Repetitive peak currents
EBL
0.1, tp = 300 s
Inductive load clamping
IL = 10 A, VBG = 16 V
Non-repetitive clamping energy
Tj
150˚C prior to turn-off
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
1.52
1.86
K/W
4
Thermal resistance
Rth j-mb
Junction to mounting base
-
1 For normal continuous operation. A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
June 2000
2
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
STATIC CHARACTERISTICS
Limits are at -40˚C
SYMBOL
Tmb
150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
VBG
Battery to ground
IG = 1 mA
50
55
65
V
VBL
-VLG
Battery to load
Negative load to ground
IL = IG = 1 mA
IL = 10 mA
50
18
55
23
65
28
V
V
-VLG
Negative load voltage1
IL = 10 A; tp = 300 s
20
25
30
V
Supply voltage
battery to ground
5.5
-
35
V
VBG
Operating range2
Currents
IB
IL
9V
3
Quiescent current
VBG
16 V
VLG = 0 V
4
Off-state load current
5
-
20
A
-
0.1
-
2
20
A
A
Tmb = 25˚C
-
0.1
1
A
-
2
4
mA
Tmb = 85˚C
9
-
-
A
VBL = VBG
IG
Operating current
IL = 0 A
IL
Nominal load current6
VBL = 0.5 V
Resistances
Tmb = 25˚C
VBG
IL
tp7
Tmb
RON
On-state resistance
9 to 35 V
10 A
300 s
25˚C
-
28
38
m
RON
On-state resistance
6V
10 A
300 s
150˚C
25˚C
-
36
70
48
m
m
150˚C
-
-
88
m
95
150
190
RG
Internal ground resistance
IG = 10 mA
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
June 2000
3
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
INPUT CHARACTERISTICS
9V
VBG
16 V. Limits are at -40˚C
Tmb
150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
II
Input current
VIG
Input clamping voltage
VIG(ON)
VIG(OFF)
VIG
MIN.
TYP.
MAX.
UNIT
VIG = 5 V
20
90
160
A
II = 200 A
5.5
7
8.5
V
Input turn-on threshold voltage
-
2.4
3
V
Input turn-off threshold voltage
1.5
2.1
-
V
-
0.3
-
V
-
-
100
A
10
-
-
A
Input turn-on hysteresis
II(ON)
Input turn-on current
VIG = 3 V
II(OFF)
Input turn-off current
VIG = 1.5 V
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VSG
Status clamping voltage
IS = 100 A
5.5
7
8.5
V
VSG
Status low voltage
IS = 100 A
-
-
1
V
Tmb = 25˚C
-
0.7
0.8
V
Tmb = 25˚C
-
0.1
15
1
A
A
2
7
12
mA
-
47
-
IS
IS
Status leakage current
Status saturation current1
VSG = 5 V
VSG = 5 V
Application information
RS
External pull-up resistor
k
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
June 2000
4
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C
SYMBOL
Tmb
150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Low supply threshold voltage1
2
4.2
5.5
V
Hysteresis
-
0.5
-
V
40
45
50
V
-
1
-
V
Undervoltage
VBG(UV)
VBG(UV)
Overvoltage
VBG(OV)
VBG(OV)
High supply threshold voltage2
Hysteresis
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED
INPUT
SUPPLY
LOAD
LOAD
OUTPUT
STATUS
DESCRIPTION
UV
OV
LC
SC
OT
L
X
X
X
X
X
OFF
H
off
H
0
0
X
0
0
ON
H
on & normal (LC not detected!)
H
1
0
X
X
X
OFF
H
supply undervoltage lockout
H
0
1
X
0
0
OFF
H
supply overvoltage shutdown
H
0
0
0
1
0
OFF
L
SC protection
H
0
0
X
X
1
OFF
L
OT shutdown
KEY TO ABBREVIATIONS
L
H
X
0
1
logic low
logic high
don’t care
condition not present
condition present
UV
OV
LC
SC
OT
undervoltage
overvoltage
low current or open circuit load
short circuit
overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
June 2000
5
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V VBG 35 V, limits are at -40˚C
Refer to TRUTH TABLE .
SYMBOL
IL(lim)
Tmb
150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
PARAMETER
CONDITIONS
Overload protection
VBL = VBG
Load current limiting
VBG
9V
MIN.
TYP.
MAX.
UNIT
34
45
64
A
Short circuit load protection
VBL(TO)
td sc
Battery load threshold voltage1
Response time2
VBL > VBL(TO)
VBG = 16 V
8
10
12
V
VBG = 35 V
15
-
20
180
25
250
V
s
150
170
190
˚C
MIN.
TYP.
MAX.
UNIT
Overtemperature protection
Tj(TO)
Threshold junction
temperature3
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13
.
SYMBOL
PARAMETER
CONDITIONS
td on
During turn-on
Delay time
from input going high
to 10% VL
-
40
60
s
dV/dton
Rate of rise of load voltage
30% to 70% VL
-
0.35
1
V/ s
t on
Total switching time
to 90% VL
-
140
200
s
During turn-off
from input going low
Delay time
to 90% VL
-
55
80
s
dV/dtoff
Rate of fall of load voltage
70% to 30% VL
-
0.6
1
V/ s
t off
Total switching time
to 10% VL
-
85
120
s
td off
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cig
Input capacitance
VBG = 13 V
-
15
20
pF
Cbl
Output capacitance
VBL = 13 V
-
250
350
pF
Csg
Status capacitance
VSG = 5 V
-
11
15
pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage.After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been
toggled low.
June 2000
6
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
IBG(ON) / mA
5
BUK215-50YT
VBL
II
I
VBG
IS
S
VIG
CLAMPING
B
TOPFET
HSS
IL
OVERVOLTAGE
SHUTDOWN
3
L
OPERATING V IG = 5 V
VLG
G
VSG
RS
UNDERVOLTAGE
SHUTDOWN
4
IB
2
IG
1
QUIESCENT VIG = 0 V
0
0
RON / mOhm
20
30
40
VBG / V
50
60
70
Fig.7. Typical supply characteristics, 25 ˚C.
IG = f(VBG); parameter VIG
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
80
10
BUK215-50YT
40
RON / mOhm
BUK215-50YT
38
typ .
RON max
36
60
34
VBG = 6 V
32
30
40
28
9 V =< VBG =< 35 V
26
20
24
22
0
20
-50
0
50
O
Tj / C
100
150
1
200
100
Fig.8. Typical on-state resistance,Tj = 25 ˚C.
RON = f(VBG); condition IL = 10 A; tp = 300 s
Fig.5. Typical on-state resistance, tp = 300 s.
RON = f(Tj); parameter VBG; condition IL = 10 A
50
10
VBG / V
IL / A
BUK215-50YT
3.0
VBG / V
IG / mA
BUK215-50YT
lL = 0 A
>=8
40
30
7
6
2.5
5
2.0
9 V <= VBG <= 35 V
lL
l >>IL(TO)
I
L
L(TO)
1.5
typ.
20
1.0
10
0.5
VBG = 50 V
0
0
0
1
VBL / V
-50
2
Fig.6. Typical on-state characteristics, Tj = 25 ˚C.
IL = f(Tj); parameter VBG; tp = 250 s
June 2000
0
50
O
Tj / C
100
150
200
Fig.9. Typical operating supply current.
IG = f(Tj); parameters IL, VBG; condition VIG = 5 V
7
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
100E-6
BUK215-50YT
BUK215-50YT
IB / A
BUK215-50YT
VBG(UV) / V
5.5
max.
10E-6
typ.
1E-6
4.5
typ.
100E-9
3.5
10E-9
on
off
1E-9
2.5
100E-12
-50
0
50
O
100
150
-50
200
0
50
Tj / C
Fig.10. Typical supply quiescent current.
IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V
100E-6
IL / A
Tj / OC
100
150
200
Fig.13. Supply undervoltage thresholds.
VBG(UV) = f(Tj); conditions VIG = 5 V; VBL 2 V
BUK215-50YT
VBG(OV) / V
55
BUK215-50YT
max.
10E-6
typ.
max.
50
1E-6
on
100E-9
45
10E-9
off
1E-9
min.
40
00E-12
10E-12
35
-50
0
50
Tj / OC
100
150
200
-50
Fig.11. Typical off-state leakage current.
IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.
100E-6
IS / A
0
50
O
Tj / C
100
150
200
Fig.14. Supply overvoltage thresholds.
VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA
VSG(LOW) / V
BUK215-50YT
BUK215-50YT
1
max.
10E-6
typ.
1E-6
0.5
100E-9
10E-9
1E-9
0
-50
0
50
O
Tj / C
100
150
200
-50
Fig.12. Status leakage current.
IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
June 2000
0
50
O
Tj / C
100
150
200
Fig.15. Typical status low characteristic.
VSG = f(Tj); conditions VBG 9 V, IS = 100 A
8
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
3
VIG / V
BUK215-50YT
BUK215-50YT
7.50
BUK215-50YT
VSG / V
VIG / V =
7.40
5
7.30
2.5
7.20
7.10
2
VIG(ON)
7.00
VIG(OFF)
6.90
0
6.80
1.5
6.70
6.60
1
6.50
-50
0
50
O
Tj / C
100
150
200
-50
Fig.16. Typical threshold voltage characteristic.
VIG = f(Tj); condition 9V VBG 16V
7.50
VIG / V
0
50
O
Tj / C 100
150
200
Fig.19. Typical status clamping voltage.
VSG = f(Tj); condition IS = 100 A, VBG = 13V
BUK215-50YT
20
IS / mA
BUK215-50YT
7.40
7.30
15
7.20
7.10
10
7.00
6.90
6.80
5
6.70
6.60
0
6.50
-50
0
50
O
Tj / C
100
150
0
200
IS / mA
4
6
8
10
VSG / V
Fig.20. Typical status characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = VBG = 0V
Fig.17. Typical input clamping voltage.
VIG = f(Tj); condition II = 200 A, VBG = 13V
8
2
BUK215-50YT
65
VBG / V
BUK215-50YT
IG =
200 mA
6
60
1 mA
4
55
2
0
50
0
1
2
3
4
5
-50
VSG / V
Fig.18. Typical status low characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A
June 2000
0
50
Tj / O C
100
150
200
Fig.21. Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
9
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
VBL / V
65
BUK215-50YT
IL / A
BUK215-50YT
0
BUK215-50YT
-5
-10
-15
IL =
60
-20
600 mA
-25
1 mA
-30
55
-35
-40
-45
-50
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
50
-50
0
50
O
Tj / C
100
150
200
Fig.22. Typical battery to load clamping voltage.
VBL = f(Tj); parameter IL; condition IG = 10mA
IL / A
10
0.0
VBL / V
Fig.25. Typical reverse diode characteristic.
IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
BUK215-50YT
50
IL / A
BUK215-50YT
current limiting
45
40
VBL(TO) typ.
35
30
5
Short circuit trip = 150us
25
20
15
10
5
0
0
-30
-25
-20
-15
-10
0
VLG / V
VLG / V
4
6
8
10
12
VBL / V
14
16
18
20
Fig.26. Typical overload characteristic, Tmb = 25 ˚C.
IL = f(VBL); condition VBG = 16 V; parameter tp
Fig.23. Typical negative load clamping.
IL = f(VLG); conditions VIG = = 0V, Tj = 25˚C
-10
2
BUK215-50YT
35
VBL(TO) / V
BUK215-50YT
max.
30
-15
25
-20
IL =
20
10 mA
15
10 A
10
typ. 25˚C
min.
-25
5
0
-30
-50
0
50
O
Tj / C
100
150
0
200
Fig.24. Typical negative load clamping voltage.
VLG = f(Tj); parameter IL; condition VIG = = 0V
June 2000
10
20
VBG / V
30
40
50
Fig.27. Short circuit load threshold voltage.
VBL(TO) = f(VBG); conditions -40˚C Tmb 150˚C
10
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
10 nF
CBL
BUK215-50YT
BUK215-50YT
VBL(TO) / V
12.0
BUK215-50YT
11.8
11.6
11.4
11.2
11.0
1nF
10.8
10.6
10.4
10.2
10.0
100pF
0
10
20
VBL / V
30
40
-50
50
IG / mA
50
100
O
150
200
Tj / C
Fig.28. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
0
0
Fig.31. Typical short circuit load threshold voltage.
VBL(TO) = f(Tj); condition VBG = 16 V
Zth j-mb ( K / W )
1e+01
BUK215-50YT
BUK215-50YT
D=
-50
-100
1e+00
0.5
1e-01
0.2
0.1
0.05
0.02
-150
1e-02
-200
-20
-15
-10
-5
1e-03
1e-07
0
PD
0
tp
D=
1e-03
T
t
T
1e-05
tp
1e-01
1e+02
t/s
VBG / V
Fig.29. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
Fig.32. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
BUK215-50YT
IL(lim) / A
50
45
40
35
30
-50
0
50
O
Tj / C 100
150
200
Fig.30. Typical overload current, VBL = 8V.
IL = f(Tj); parameter VBG = 13V;t p = 300 s
June 2000
11
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2 -PAK); 5 leads
(one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT426
Fig.33. SOT426 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
June 2000
12
Rev 1.000
Philips Semiconductors
Product Specification
TOPFET high side switch
SMD version
BUK215-50YT
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
June 2000
13
Rev 1.000