MA-COM MA4AGSW8-1 Sp8t algaas pin diode switch rohs compliant Datasheet

MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
FEATURES
 Ultra Broad Bandwidth: 50 MHz to 40 GHz
 Functional Bandwidth : 50 MHz to 50 GHz
 Low Current consumption.
 -10mA for low loss state
+10mA for Isolation state
 M/A-COM’s unique AlGaAs hetero-junction
anode technology.
 Silicon Nitride Passivation
 Polymer Scratch protection
Yellow areas indicate bond pads
DESCRIPTION
M/A-COM’s MA4AGSW8-1 is an Aluminum-GalliumArsenide, single pole, eight throw (SP8T), PIN diode
switch. The switch features enhanced AlGaAs anodes
which are formed using M/A-COM’s patented heterojunction technology. AlGaAs technology produces a
switch with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3 dB
reduction in insertion loss can be realized at 50 GHz.
This device is fabricated on an OMCVD epitaxial wafer
using a process designed for high device uniformity
and extremely low parasitics. The diodes within the
chip exhibit low series resistance, low capacitance,
and fast switching speed. They are fully passivated
with silicon nitride and have an additional polymer
layer for scratch protection. The protective coating
prevents damage during handling and assembly to the
diode junction and the chip anode air-bridges. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes used makes this switch
ideal for fast response, high frequency, multi-throw
switch designs. AlGaAs PIN diode switches are an
ideal choice for switching arrays in radar systems,
radiometers, test equipment and other multi-assembly
components.
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Maximum Rating
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Incident C.W. RF Power
+23dBm C.W.
Breakdown Voltage
25V
Bias Current
± 25mA
Assembly Temperature
+300°C < 10 sec
Junction Temperature
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
1
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
Electrical Specifications @ TA = 25°C, +/-15mA bias current and 0V
(On-wafer measurements)
RF SPECIFICATIONS
FREQUENCY
BAND
0.05 - 18 GHz
18 - 26 GHz
26 - 40 GHz
PARAMETER
INSERTION LOSS
ISOLATION
1
INPUT/OUTPUT RETURN LOSS
MIN
TYP
MAX
UNITS
-
1.5
1.8
2.0
2.0
2.1
2.3
dB
dB
dB
0.05 - 18 GHz
18 - 26 GHz
26 - 40 GHz
30
30
30
32
32
32
-
dB
dB
dB
0.05 - 18 GHz
18 - 26 GHz
26 - 40 GHz
10
13
10
15
15
20
-
dB
dB
dB
*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series
junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction
diode port in low loss = 22 dB Typical.
Parameter
F ( GHz )
Test Conditions
Typical
Value
Units
Switching Speed*
( 10-90 % RF Voltage )
10.0
+/- 5V TTL Compatible PIN Diode Driver
20
nS
*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible
driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 Ω ohms to
achieve 15 ns rise and fall times.
2
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Visit www.macom.com for additional data sheets and product information.
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MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
Typical R.F. Performance (Probed on Wafer) @ +25°C
Insertion Loss
Loss
Frequency ( GHz )
Isolation ( dB )
Isolation
Frequency ( GHz )
Loss ( dB )
Return Loss
Frequency ( GHz )
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
Operation of the MA4AGSW8-1 Switch
The application of either a +15 mA or -15 mA DC bias current to the selected output port will provide the low
insertion loss state. Typically this low loss, “ON” bias voltage through (3) series diodes is 4.5 Volts maximum. All
isolated ports are set to 0V at 0 mA, or, to improve switching speed and isolation, a back bias of 5V/0 mA may also
be applied. RF to DC bias networks are required on all RF ports. To switch the individual RF ports on and off, a
simple single +5V, PIN diode supply, with a TTL gate driver can be used to supply current for the low loss state or
0 V back bias for isolation . In this bias scheme, +5V through a current limiting resistor would be applied at the
common port, J1 and each RF port would be connected to a TTL gate. Low loss would occur when the selected
gate voltage, TTL0, at the output port is 5V/+15 mA and isolation would occur when the selected gate
voltage,TTL1, is -5V/0mA. For faster switching speeds,< 20 nS, a ± 5V ,PIN diode TTL driver should be employed
to help remove the diode stored charge with back bias.
MA4AGSW8-1 Schematic and Driver Bias Connections
TYPICAL DRIVER CONNECTIONS
Input Port
J1
J1
J1
J1
J1
J1
J1
J1
Output Ports
-15mA @ J2 -15mA @ J3 -15mA @ J4 -15mA @ J5 -15 mA @ J6 -15mA @ J7 -15mA @ J8 -15mA @ J9
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Isolation
Notes:
Low Loss = -15mA applied at the specified Output Port. (A dc ground return at port J1 must be provided)
Isolation = 0 Volts applied at the specified Output Ports.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
Chip Dimensions and Bonding Pad Locations (In Yellow)
I
Dimension
mils
mm
min
max
min
max
A
B
C
D
E
F
G
H
92.7
49.4
84.8
56.9
41.5
20.6
28.3
42.3
93.9
50.6
85.2
57.3
41.9
21.0
28.7
42.7
2.355
1.255
2.153
1.445
1.055
0.523
0.720
1.074
2.385
1.285
2.163
1.455
1.065
0.533
0.730
1.084
I
3.7
3.7
4.2
4.2
0.094
0.094
0.107
0.107
Bond Pads
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
ASSEMBLY INSTRUCTIONS
CLEANLINESS
The chip should be handled in a clean environment.
STATIC SENSITIVITY
This device is considered ESD Class 1A, HBM. Proper ESD techniques should be used during handling.
GENERAL HANDLING
The protective polymer coating on the active areas of the die provides scratch and impact protection,
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with
vacuum pickup tools, or alternatively with plastic tweezers.
ASSEMBLY TECHNIQUES
The MA4AGSW8-1, AlGaAs switch is designed to be mounted with electrically conductive silver epoxy or with
a low temperature solder perform, which does not have a rich tin content.
SOLDER DIE ATTACH
Only solders which do not scavenge gold, such as 80Au/20Sn or Indalloy #2 is recommended. Do not expose
die to temperatures greater than 300°C for more than 10 seconds.
CONDUCTIVE EPOXY DIE ATTACH
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.
RIBBON/WIRE BONDING
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads.
A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the
lowest inductance and best microwave performance. For more detailed handling and assembly
instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode
Devices” at www.macom.com.
Ordering Information
Part Number
Packaging
MA4AGSW8-1
Waffle Pack
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4AGSW8-1
SP8T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V2
M/A-COM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
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7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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