IRF IRF5851PBF Hexfetâ® power mosfet Datasheet

PD-95341
IRF5851PbF
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
VDSS
N-Ch
P-Ch
20V
-20V
RDS(on) 0.090Ω 0.135Ω
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
20
2.7
2.2
11
-20
-2.2
-1.7
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient ƒ
Typ.
Max.
Units
–––
130
°C/W
1
08/31/05
IRF5851PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Min. Typ. Max.
20
—
—
-20 —
—
— 0.016 —
— -0.011 —
—
— 0.090
—
— 0.120
—
— 0.135
—
— 0.220
0.60 — 1.25
-0.45 — -1.2
5.2 —
—
3.5 —
—
—
— 1.0
—
— -1.0
—
—
25
—
— -25
––
— ±100
— 4.0 6.0
— 3.6 5.4
— 0.95 —
— 0.66 —
— 0.83 —
— 5.7 —
— 6.6 —
— 8.3 —
— 1.2 —
—
14
—
—
15
—
—
31
—
— 2.4 —
—
28
—
— 400 —
— 320 —
—
48
—
—
56
—
—
32
—
—
40
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Units
V
V/°C
Ω
V
S
µA
nC
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
VGS = -4.5V, ID = -2.2A ‚
VGS = -2.5V, ID = -1.7A ‚
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 2.7A ‚
VDS = -10V, ID = -2.2A ‚
VDS = 16 V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ = 70°C
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = ± 12V
N-Channel
ID = 2.7A, VDS = 10V, VGS = 4.5V
‚
P-Channel
ID = -2.2A, V DS = -10V, VGS = -4.5V
ns
N-Channel
VDD = 10V, ID = 1.0A, R G = 6.2Ω,
VGS = 4.5V
‚
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
VGS = -4.5V
pF
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 0.96
—
— -0.96 A
—
—
11
—
— -9.0
—
— 1.2
TJ = 25°C, I S = 0.96A, VGS = 0V ‚
V
—
— -1.2
TJ = 25°C, I S = -0.96A, VGS = 0V ‚
—
25
38
N-Channel
ns
—
23
35
TJ = 25°C, IF = 0.96A, di/dt = 100A/µs
— 6.5 9.8 nC
P-Channel
‚
TJ = 25°C, IF = -0.96A, di/dt = -100A/µs
— 7.7 12
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 10 & 26 )
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5851PbF
N-Channel
100
100
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
1.50V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
1
V DS = 15V
20µs PULSE WIDTH
3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
2.0
2.5
1
VDS , Drain-to-Source Voltage (V)
100
2.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
Fig 1. Typical Output Characteristics
0.1
1.5
1.50V
1
VDS , Drain-to-Source Voltage (V)
10
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
TOP
TOP
ID = 2.7A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5851PbF
N-Channel
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
500
Ciss
400
300
200
100
0
Coss
Crss
1
10
VGS , Gate-to-Source Voltage (V)
600
VDS = 16V
VDS = 10V
8
6
4
2
0
10
ID = 2.7A
100
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
6
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
1
10
100us
1ms
1
TJ = 25 ° C
0.1
0.4
10ms
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.4
TA = 25 °C
TJ = 150 °C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5851PbF
N-Channel
3.0
RD
VDS
ID , Drain Current (A)
2.5
V GS
RG
2.0
D.U.T.
+
- VDD
4.5V
1.5
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF5851PbF
RDS (on) , Drain-to-Source On Resistance ( Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
N-Channel
0.14
0.12
0.10
ID = 2.7A
0.08
0.30
0.20
VGS = 2.5V
0.10
VGS = 4.5V
0.00
0
0.06
2.0
3.0
4.0
5.0
6.0
7.0
2
8.0
4
6
8
10
12
ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
4.5 V
50KΩ
12V
.2µF
.3µF
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRF5851PbF
N-Channel
1.2
24
ID = 250µA
16
Power (W)
VGS(th) , Variace ( V )
20
1.0
0.8
12
8
0.6
4
0
0.4
-75
-50
-25
0
25
50
75
100 125
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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150
0.001
0.010
0.100
1.000
10.000
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRF5851PbF
P-Channel
100
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM -1.2V
10
1
-1.2V
0.1
10
1
-1.2V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
2.4
2.8
-VGS , Gate-to-Source Voltage (V)
Fig 18. Typical Transfer Characteristics
8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
TJ = 25 ° C
2.0
1
10
100
Fig 17. Typical Output Characteristics
10
1.6
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 16. Typical Output Characteristics
0.1
1.2
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 19. Normalized On-Resistance
Vs. Temperature
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IRF5851PbF
P-Channel
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
400
Ciss
300
200
100
Coss
Crss
10
-VGS , Gate-to-Source Voltage (V)
500
1
10
6
4
2
100
0
2
4
6
8
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-16V
VDS =-10V
8
0
0
ID = -2.2A
TJ = 150 ° C
1
TJ = 25 ° C
10
100us
1ms
1
10ms
0.1
0.4
TA = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 22. Typical Source-Drain Diode
Forward Voltage
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1.4
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 23. Maximum Safe Operating Area
9
IRF5851PbF
P-Channel
2.5
RD
VDS
VGS
-ID , Drain Current (A)
2.0
D.U.T.
RG
+
VDD
1.5
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 25a. Switching Time Test Circuit
0.5
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
10%
150
°
TJ , Junction Temperature (°C)
90%
Fig 24. Maximum Drain Current Vs.
Junction Temperature
VDS
Fig 25b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 26. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
10
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IRF5851PbF
0.24
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
P-Channel
0.20
0.16
ID = -2.2A
0.12
0.08
2.0
3.0
4.0
5.0
6.0
7.0
0.40
0.30
VGS = -2.5V
0.20
VGS = -4.5V
0.10
0
2
-V GS, Gate -to -Source Voltage (V)
Fig 27. Typical On-Resistance Vs. Gate
Voltage
4
6
8
10
-I D , Drain Current (A)
Fig 28. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 29a. Basic Gate Charge Waveform
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12V
IG
ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
IRF5851PbF
P-Channel
1.0
24
0.8
16
ID = -250µA
Power (W)
-VGS(th) , Variace ( V )
20
0.6
12
8
4
0.4
0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 30. Threshold Voltage Vs. Temperature
12
0.001
0.010
0.100
1.000
10.000
Time (sec)
Fig 31. Typical Power Vs. Time
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IRF5851PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
DAT E CODE
Y = YEAR
W = WEEK
PART NUMBER
TOP
PART NUMBER CODE REF ERENCE:
A = S I3443DV
B = IRF5800
C = IRF 5850
D = IRF 5851
E = IRF5852
F = IRF5801
I = IRF 5805
J = IRF 5806
K = IRF5810
L = IRF 5804
M = IRF5803
N = IRF 5802
Note: A line above the work week
(as s hown here) indicates Lead-F ree.
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LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
X
Y
13
IRF5851PbF
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
14
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