IRF IRIS-G5653 Integrated switcher Datasheet

IRIS-G5653
Features
INTEGRATED SWITCHER
• Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology.
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Package Outline
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PRC mode (≒20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
TO-220 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
• Thermal Shutdown with latch mode (TSD)
IRIS-G5653
Descriptions
650
1.9Ω
AC input(V)
Pout(W)
Note 1
230±15%
125
85 to 264
60
IRIS-G5653A is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back QuasiResonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external
components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G5600
OCP/FB
Vin
GND
S
D
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IRIS-G5653A
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
IDpeak
Definition
Drain Current
*1
IDMAX
Maximum switching current *5
Terminals Max. Ratings
1-2
10
1-2
EAS
Vin
Vth
Single pulse avalanche energy *2
Input voltage for control part
O.C.P/F.B Pin voltage
1-2
4-3
5-3
P D1
Power dissipation for MOSFET *3
Power dissipation for control part
(Control IC) *4
Internal frame temperature
in operation
Operating ambient temperature
Storage temperature
Channel temperature
P D2
TF
Top
Tstg
Tch
Units
A
A
10
1-2
80
35
6
26
1.5
mJ
V
V
W
W
4-3
0.8
W
-20 ~ +125
-20 ~ +125
-40 ~ +125
150
℃
℃
℃
℃
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
-
Note
Single Pulse
V2-3=0.78V
Ta=-20~+125℃
Single Pulse
VDD=99V, L=20mH
IL peak=2.6A
With infintite heatsink
Without heatsink
Specified by
Vin×Iin
Refer to recommended
operating temperature
Fig.1
V2-3
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
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IRIS-G5653A
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)
Symbol
Vin(ON)
Vin(OFF)
Iin(ON)
Iin(OFF)
TOFF(MAX)
Tth(2)
TOFF(MIN)
Vth(1)
Vth(2)
IOCP/FB
Vin(OVP)
Iin(H)
Vin(La.OFF)
Tj(TSD)
Vin(SENSE)
-
Definition
Operation start voltage
Operation stop voltage
Circuit current in operation
Circuit current in non-operation
Maximum OFF time
Minimum time for input of quasi
resonant signals
*6
Minimum OFF time
*7
O.C.P/F.B Pin threshold voltage 1
O.C.P/F.B Pin threshold voltage 2
O.C.P/F.B Pin extraction current
O.V.P operation voltage
Latch circuit sustaining current *8
Latch circuit release voltage *8
Thermal shutdown operating temperature
Detected Voltage
Temperature coefficient of detected voltage
MIN
14.4
9
45
Ratings
TYP
16
10
-
MAX
17.6
11
20
100
55
Units
V
V
mA
µA
µsec
0.68
1.3
1.2
34
6.6
140
31.7
-
0.73
1.45
1.35
36.5
32
2.5
1
2
0.78
1.6
1.5
39
400
8.4
32.3
-
µsec
µsec
V
V
mA
V
µA
V
℃
V
mV/℃
Test
Conditions
Vin=0→17.6V
Vin=17.6→9V
Vin=14V
Vin=0→39.0V
Vin=39.0→8.5V
Vin=39.0→6.6V
Vin=31.7→32.3V
Vin=31.7→32.3V
*6 Recommended operating conditions
Tth(2)≧1.0μsec
Time for iunput of quasi resonant signals
VO.C.P/F.B
For the quasi resonant signal inputted to OCP/FB Pin
Vth(2)
at the time of quasi resonant operation, the signal shall
0V
be wider thant Tth(2).
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified
Symbol
Definition
MIN
Ratings
TYP
MAX
Units
Test Conditions
ID=300µA
VDSS
Drain-to-Source breakdown voltage
IDSS
Drain leakage current
650
-
-
V
V3- 2 =0V(short)
-
-
300
µA
V3-2=0V(short)
VDS =650V
V3-2=10V
RDS(ON) On-resistance
Switching time
tf
-
-
1.9
250
Ω
nsec
-
-
2
℃/W
ID=1.2A
Between channel and
θch-F
Thermal resistance
internal frame
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IRIS-G5653A
IRIS-G5653
IRIS-G5653
MOSFET A.S.O. Curve
A.S.O. temperature derating coefficient curve
100
80
60
40
1ms
1
0.1
20
0
0
20
40
60
80
100
ASO temperature derating
shall be made by obtaining
ASO Coefficient from the left
curve in your use.
0.01
120
1
Internal frame temperature TF [℃]
IRIS-G5653
10
100
D rain-to-Source V oltage V D S[V ]
1000
IRIS-G5653
Avalanche energy derating curve
Maximum Switching current derating curve
Ta=‐20~+125℃
100
10
EAS temperature derating coefficient[%]
Maximum Switchng Current IDMAX[A]
12
0.1ms
Drain current
limit by ON
resistance
10
Drain CurrentD I[A]
A.S.O. temperature derating coefficient[%]
100
8
6
4
2
80
60
40
20
0
0
0.7
0.8
0.9
1.0
V2-3 [V]
1.1
1.2
25
50
75
100
125
150
Channel temperature Tch [℃]
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IRIS-G5653A
IRIS-G5653
MOSFET Ta-PD1 Curve
IRIS-G5653
MIC TF-PD2 Curve
30
0.9
PD1=26[W]
PD2=0.8[W]
0.8
25
Power dissipation P D2[W]
With infinite
heatsink
20
15
10
0.6
0.5
0.4
0.3
0.2
Without
heatsink
5
PD1=1.5[W]
0.1
0
0
0
20
40
60
80
100
120
140
0
160
20
40
60
80
100
120
140
160
Internal frame temperature TF[℃]
Ambient temperature Ta[℃]
IRIS-G5653
Transient thermal resistance curve
10
Transient thermal resistance θch-c[℃/W]
Power dissipation P D1[W]
0.7
1
0.1
0.01
0.001
1µ
10µ
100µ
1m
10m
100m
tim e t [sec]
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IRIS-G5653A
Block Diagram
4 Vin
START
3
D
LATCH
O.V.P.
DRIVE
REG.
2
S
T.S.D
Vth(1)
-
1
OCP/FB
+
O.S.C
-
Vth(2)
+
5
GND
Lead Assignments
1
2
3
4
Symbol
D
S
GND
Vin
5
OCP/FB
Pin No.
Description
Drain Pin
Source Pin
Ground Pin
Power supply Pin
Overcurrent / Feedback
Pin
Function
MOSFET drain
MOSFET source
Ground
Input of power supply for control circuit
Input of overcurrent detection
signal / constant voltage control signal
Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
D
S
STEP DRV – 2 step drive circuit
GND
Vin
OCP/FB
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IRIS-G5653A
Case Outline
4.2 ±0.2
φ3.2 ±0.2
16.9 ±0.3
7.9 ±0.2
4 ±0.2
2.8 ±0.2
IRIS
R-end
(4.6)
0.94 ±0.15
2-(R1)
+0.2
0.85 -0.1
8.7 ±0.5
4.1 ±0.5
2.6 ±0.1
+0.2
0.45 -0.1
5.08 ±0.6
4xp1.7±0.1=(6.8)
10 ±0.2
0.7
1
2
3
4
5
Material of Pin : Cu
Treatment of Pin : Ni plating + solder dip
0.7
a:Type Number G5653A
b:Lot Number
1st letter:The last digit of year
2nd letter:Month
1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.
3rd & 4th letter:Day
Arabic Numerals
Weight : Approx. 2.3g
Dimensions in mm
DWG.No.:TG3A-1128
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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