EGF1A - EGF1D EGF1A - EGF1D Features • • • Low forward voltage drop. Low profile package. Fast switching for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current, @ TL = 100°C IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature Tstg TJ Value 1A 50 1B 100 1C 150 1D 200 Units V 1.0 A 30 A -65 to +175 °C -65 to +175 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 2.0 W RθJA Thermal Resistance, Junction to Ambient* 85 °C/W RθJL Thermal Resistance, Junction to Lead* 30 °C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 1A VF Forward Voltage @ 1.0 A trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 100°C Total Capacitance VR = 4.0 V, f = 1.0 MHz IR CT 2001 Fairchild Semiconductor Corporation 1B 1C Units 1D 1.0 V 50 ns 10 100 µA µA 15 pF EGF1A-EGF1D, Rev. D EGF1A - EGF1D 100 1.6 TA J = 25º C Pulse Width = 300µ µS 2% Duty Cycle 1.4 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 1.2 1 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.8 0.6 0.4 10 1 0.1 0.2 0 0 25 50 75 100 125 Lead Temperature [ºC] 150 Figure 1. Forward Current Derating Curve 40 1000 30 100 20 10 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 3. Non-Repetitive Surge Current 0.4 0.6 0.8 1 1.2 Forward Voltage, VF [V] 1.4 1.6 Figure 2. Forward Voltage Characteristics Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] 0.01 0.2 175 T A = 100º C 10 TA J = 25º C 1 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Total Capacitance, CT [pF] 60 50 40 30 20 10 0 0.1 0.5 1 2 5 10 20 50 100 Reverse Voltage, V R [V] 500 Figure 5. Total Capacitance 50Ω NONINDUCTIVE 50Ω NONINDUCTIVE +0.5A trr (-) DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation EGF1A-EGF1D, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4