APTGT75TDU120PG Triple Dual Common Source Fast Trench + Field Stop IGBT® Power Module G3 G5 E1 E3 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C2 C6 C3 G3 E1 E3 E3/E4 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant C5 G1 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration C6 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 100 75 175 ±20 350 Tj = 125°C 150A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 G1 E1/E2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C5 C3 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT75TDU120PG – Rev 1 C1 VCES = 1200V IC = 75A @ Tc = 80°C APTGT75TDU120PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Tf Td(on) Tr Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IF Maximum Reverse Leakage Current VR=1200V Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 75A VGE = 0V IF = 75A VR = 600V di/dt =2000A/µs www.microsemi.com Typ 1.7 2.0 5.0 Min Test Conditions DC Forward Current VF 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C R G = 4.7Ω Reverse diode ratings and characteristics IRM Min Typ 5340 280 240 260 30 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V pF ns 420 70 285 50 ns 520 90 7 mJ 8.1 Min 1200 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 75 1.6 1.6 170 Tj = 125°C 280 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 7 14 3 5.5 Max 250 500 Unit V µA A 2.1 V ns July, 2006 ICES Test Conditions µC mJ 2-5 APTGT75TDU120PG – Rev 1 Symbol Characteristic APTGT75TDU120PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.35 0.58 Unit °C/W V 150 125 100 5 250 °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3-5 APTGT75TDU120PG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT75TDU120PG Typical Performance Curve Output Characteristics (VGE =15V) 150 Output Characteristics 150 T J = 125°C 125 T J=25°C 100 75 50 25 25 VGE=15V VGE =9V 0 0 1 2 VCE (V) 3 0 4 1 17.5 T J=25°C 125 3 4 VCE = 600V VGE = 15V RG = 4.7Ω T J = 125°C 15 12.5 TJ=125°C E (mJ) 100 2 V CE (V) Energy losses vs Collector Current Transfert Characteristics 150 75 10 Eoff Eon 7.5 50 5 25 2.5 Er 0 0 5 6 7 8 9 10 11 0 12 25 Switching Energy Losses vs Gate Resistance 16 VCE = 600V VGE =15V IC = 75A T J = 125°C 14 12 75 100 125 150 Reverse Bias Safe Operating Area 175 Eon 150 125 Eoff IC (A) 10 50 IC (A) VGE (V) E (mJ) VGE =13V 75 50 0 IC (A) VGE=17V T J=125°C 100 IC (A) IC (A) 125 8 6 Er 100 75 4 50 2 25 0 VGE =15V TJ=125°C RG=4.7Ω 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 0 400 800 V CE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 0.3 July, 2006 0.35 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT75TDU120PG – Rev 1 Thermal Impedance (°C/W) 0.4 APTGT75TDU120PG Forward Characteristic of diode 150 VCE=600V D=50% R G=4.7Ω TJ =125°C 50 40 100 Tc =75°C 30 ZCS TJ=25°C 125 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZVS TJ=125°C 75 50 20 10 TJ =125°C 25 Hard switching 0 0 0 20 40 60 IC (A) 80 100 0 120 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.4 0.3 0.2 0.1 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75TDU120PG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)