MAS MAS9179A1 Am receiver ic Datasheet

DA9179.002
19 May, 2005
MAS9179
AM Receiver IC
• Tri Band Receiver IC
• High Sensitivity
• Very Low Power Consumption
• Wide Supply Voltage Range
• Power Down Control
• Control for AGC On
• High Selectivity by Crystal Filter
• Fast Startup Feature
DESCRIPTION
The MAS9179 AM-Receiver chip is a highly
sensitive, simple to use AM receiver specially
intended to receive time signals in the frequency
range from 40 kHz to 100 kHz. Only a few external
components are required for time signal receiving.
The circuit has preamplifier, wide range automatic
gain control, demodulator and output comparator
built in. The output signal can be processed directly
by an additional digital circuitry to extract the data
from the received signal. The control for AGC
(automatic gain control) can be used to switch AGC
on or off if necessary. MAS9179 supports tri band
operation by switching between three crystal filters
and two additional antenna tuning capacitors.
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
Tri Band Receiver IC
Highly Sensitive AM Receiver, 0.4 µVRMS typ.
Wide Supply Voltage Range from 1.1 V to 5 V
Very Low Power Consumption
Power Down Control
Fast Startup
Only a Few External Components Necessary
Control for AGC On
Wide Frequency Range from 40 kHz to 100 kHz
High Selectivity by Quartz Crystal Filter
MAS9179 has differential input and different internal
compensation capacitor options for compensating
shunt capacitances of different crystals (See ordering
information on page 9).
•
Multi Band Time Signal Receiver WWVB (USA),
JJY (Japan), DCF77 (Germany), MSF (UK), HGB
(Switzerland) and BPC (China)
BLOCK DIAGRAM
QO3
RFIP
QO2 QO1
AON
QI
AGC Amplifier
Demodulator
&
Comparator
OUT
RFIM
RFI2
RFI3
Power Supply/Biasing
VDD
VSS PDN1 PDN2
AGC
DEC
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19 May, 2005
PAD LAYOUT
VDD
VSS
QO2
RFI2
QO1
RFIM
QO3
RFIP
QI
RFI3
AGC
PDN1
PDN2
AON
OUT
1892 µm
MAS9179Ax,
x=1..4
DEC
1620 µm
DIE size = 1.62 x 1.89 mm; round PAD ∅ 80 µm
Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or
left floating. Please make sure that VDD is the first pad to be bonded. Pick-and-place and all component
assembly are recommended to be performed in ESD protected area.
Note: Coordinates are pad center points where origin has been located in bottom-left corner of the silicon die.
Pad Identification
Name
X-coordinate
Y-coordinate
Power Supply Voltage
Quartz Filter Output for Crystal 2
Quartz Filter Output for Crystal 1
Quartz Filter Output for Crystal 3
Quartz Filter Input for Crystals
AGC Capacitor
Power Down/Frequency Selection Input 2
Receiver Output
Demodulator Capacitor
AGC On Control
Power Down/Frequency Selection Input 1
Receiver Input 3 (for Antenna Capacitor 3)
Positive Receiver Input
Negative Receiver Input
Receiver Input 2 (for Antenna Capacitor 2)
Power Supply Ground
VDD
QO2
QO1
QO3
QI
AGC
PDN2
OUT
DEC
AON
PDN1
RFI3
RFIP
RFIM
RFI2
VSS
174 µm
174 µm
174 µm
174 µm
174 µm
174 µm
174 µm
175 µm
1442 µm
1442 µm
1442 µm
1442 µm
1442 µm
1442 µm
1442 µm
1442 µm
1657 µm
1452 µm
1248 µm
1043 µm
839 µm
634 µm
429 µm
225 µm
240 µm
444 µm
649 µm
853 µm
1058 µm
1262 µm
1467 µm
1671 µm
Note
3
1
2
3
4
4
Notes:
1) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced
(modulated)
- the output is a current source/sink with |IOUT| > 5 µA
- at power down the output is pulled to VSS (pull down switch)
2) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)
- Internal pull-up with current < 1 µA which is switched off at power down
3) PDN1 = VDD and PDN2 = VDD means receiver off
- Fast start-up is triggered when the receiver is after power down controlled to power up
4) Receiver inputs RFIP and RFIM have both 600 kΩ biasing MOSFET-transistors towards ground
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DA9179.002
19 May, 2005
FREQUENCY SELECTION
The frequency selection and power down control is
accomplished via two digital control pins PDN1 and
PDN2. The control logic is presented in table 1.
Table 1 Frequency selection and power down control
PDN2
RFI2 Switch RFI3 Switch
PDN1
Selected Crystal
Output
Description
Power down
Frequency 1
Frequency 2, RFI2 capacitor
connected in parallel with antenna
Frequency 3, RFI2 and RFI3
capacitors connected in parallel
with antenna
High
High
Low
High
Low
High
Open
Open
Closed
Open
Open
Open
QO1
QO2
Low
Low
Closed
Closed
QO3
The internal antenna tuning capacitor switches
(RFI2, RFI3) and crystal filter output switches
(QO1, QO2, QO3) are controlled according table 1.
See switches in block diagram on page 1.
If frequency 1 is selected the RFI2 and RFI3
switches are open and only crystal output QO1 is
active. Antenna frequency is determined by
antenna inductor LANT (see Typical Application on
page 5), antenna capacitor CANT1 and parasitic
capacitances related to antenna inputs RFIP, RFIM,
RFI2
and
RFI3
(see
Antenna
Tuning
Considerations below). Frequency 1 is the highest
frequency of the three selected frequencies.
If frequency 2 is selected then RFI2 switch is closed
to connect CANT2 to pin RFIM in parallel with ferrite
antenna and tune it to frequency 2. Then only
crystal output QO2 is active. Frequency 2 is the
medium frequency of the three selected
frequencies.
If frequency 3 is selected both RFI2 and RFI3
switches are closed to connect both CANT2 and
CANT3 capacitors to RFIM pin in parallel with ferrite
antenna and tune it to frequency 3. Then only
crystal QO3 is active. Frequency 3 is the lowest
frequency of the three selected frequencies.
It is recommended to switch the device to power
down for 50ms before switching to another
frequency. This guarantees fast startup in switching
to another frequency. The 50ms power down period
is used to discharge AGC capacitor and to initialize
fast startup conditions.
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DA9179.002
19 May, 2005
ANTENNA TUNING CONSIDERATIONS
The ferrite bar antenna having inductance LANT and
parasitic coil capacitance CCOIL is tuned to three
reception frequencies f1, f2 and f3 by parallel
capacitors CANT1, CANT2 and CANT3. The receiver
input stage and internal antenna capacitor switches
have capacitances CRFIP, COFF2, COFF3 which affect
the resonance frequencies. COFF2 and COFF3 are
switch capacitances when switches are open.
When switches are closed these capacitances are
shorted by on resistance of the switches and they
are effectively eliminated. Following relationships
can be written into three tuning frequencies.
Frequency f1 (highest frequency):
CTOT1=CCOIL+CANT1+CRFIP+COFF2+COFF3=CCOIL+CANT1+6pF+37pF+119pF=CCOIL+CANT1+162pF,
1
f1 =
2π L ANT ⋅ CTOT 1
Frequency f2 (middle frequency):
CTOT2=CCOIL+CANT1+CANT2+CRFIP+COFF3=CCOIL+CANT1+CANT2+ 6pF+119pF=CCOIL+CANT1+CANT2+ 125pF,
1
f2 =
2π L ANT ⋅ CTOT 2
Frequency f3 (lowest frequency):
CTOT3=CCOIL+CANT1+ CANT2+ CANT3+CRFIP=CCOIL+CANT1+ CANT2+ CANT3+6pF,
1
f3 =
2π L ANT ⋅ CTOT 3
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19 May, 2005
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Supply Voltage
Input Voltage
Power Dissipation
Operating Temperature
Storage Temperature
VDD-VSS
VIN
PMAX
TOP
TST
Conditions
Min
Max
Unit
-0.3
VSS-0.3
6
VDD+0.3
100
+85
+150
V
V
mW
o
C
o
C
-40
-55
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 1.4V, Temperature = 25°C
Parameter
Operating Voltage
Current Consumption
Stand-By Current
Input Frequency Range
Minimum Input Voltage
Maximum Input Voltage
Receiver Input Resistance
Receiver Input Capacitance
RFI2 Switch On Resistance
RFI2 Switch Off Capacitance
RFI3 Switch On Resistance
RFI3 Switch Off Capacitance
Input Levels |lIN|<0.5 µA
Output Current
VOL<0.2 VDD;VOH >0.8 VDD
Output Pulse
Symbol
VDD
IDD
IDDoff
fIN
VIN min
VIN max
RRFI
CRFI
RON2
COFF2
RON3
COFF3
VIL
VIH
|IOUT|
T100ms
T200ms
T500ms
T800ms
Startup Time
TStart
Output Delay Time
TDelay
Conditions
Min
Typ
1.10
VDD=1.4 V, Vin=0 µVrms
VDD=1.4 V, Vin=20 mVrms
VDD=3.6 V, Vin=0 µVrms
VDD=3.6 V, Vin=20 mVrms
31
27
64
37
67
40
40
0.4
Max
Unit
5
V
µA
91
65
0.1
100
1
20
f=40kHz..77.5 kHz
230
6
3.8
37
2.4
119
VDD=1.4 V
VDD=1.4 V
0.2
VDD
0.8 VDD
5
1 µVrms ≤ VIN ≤
20 mVrms
1 µVrms ≤ VIN ≤
20 mVrms
1 µVrms ≤ VIN ≤
20 mVrms
1 µVrms ≤ VIN ≤
20 mVrms
Fast Start-up, Vin=0.4 µVrms
Fast Start-up, Vin=20 mVrms
µA
kHz
µVrms
mVrms
kΩ
pF
Ω
pF
Ω
pF
V
µA
50
140
ms
150
230
ms
400
500
600
ms
700
800
900
ms
1.3
3.5
50
s
100
ms
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19 May, 2005
TYPICAL APPLICATION
X3
X2
Note 1
Optional
Control
for AGC on/hold
X1
QO3
CANT1
LANT
CANT3
CANT2
QO2
QO1
AON
QI
Demodulator
&
Comparator
RFIP
AGC Amplifier
OUT
Receiver
Output
RFIM
Ferrite
Antenna
RFI2
Power Supply/Biasing
VSS PDN1 PDN2
VDD
RFI3
DEC
AGC
+ CAGC
VBATTERY
Power Down /
Fast Startup /
Frequency Selection
Figure 1
CDEC
Note 2
Application circuit of tri band receiver MAS9179
X3
40.003 kHz
X2
60.003kHz
X1
77.503kHz
QO3
LANT
3.07mH
CANT1
1.2nF
Ferrite
Antenna
CANT3
0.91nF
CANT2
3nF
QO2
QO1
Optional
Control
for AGC on/hold
AON
QI
RFIP
AGC Amplifier
Demodulator
&
Comparator
OUT
Receiver
Output
RFIM
RFI2
RFI3
Power Supply/Biasing
VDD
VSS PDN1 PDN2
AGC
DEC
+ CAGC
10 µF
1.4 V
CDEC
47 nF
Power Down /
Fast Startup /
Frequency Selection
Figure 2
Example circuit of tri band receiver MAS9179 for DCF77/MSF/WWVB/JJY frequencies
6 (9)
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19 May, 2005
TYPICAL APPLICATION (Continued)
Note 1: Crystals
The crystals as well as ferrite antenna frequencies are chosen according to the time-signal system (Table 2).
The crystal shunt capacitance C0 should be matched as well as possible with the internal shunt capacitance
compensation capacitor CC of MAS9179. See Compensation Capacitance Options on table 3.
Table 2 Time-Signal System Frequencies
Time-Signal System
Location
Antenna Frequency
Recommended Crystal Frequency
DCF77
HGB
MSF
WWVB
JJY
BPC
77.5 kHz
75 kHz
60 kHz
60 kHz
40 kHz and 60 kHz
68.5 kHz
77.503 kHz
75.003 kHz
60.003 kHz
60.003 kHz
40.003 kHz and 60.003 kHz
68.505 kHz
Germany
Switzerland
United Kingdom
USA
Japan
China
Table 3 Compensation Capacitance Options
Crystal Description
Device
CC
MAS9179A1
MAS9179A2
MAS9179A3
MAS9179A4
0.75 pF
0.875 pF
1.25 pF
1.5 pF
For low C0 crystal
For low C0 crystal
For high C0 crystal
For high C0 crystal
It should be noted that grounded crystal package has reduced shunt capacitance. This value is about 85% of
floating crystal shunt capacitance. For example crystal with 1pF floating package shunt capacitance can have
0.85pF grounded package shunt capacitance. PCB traces of crystal and external compensation capacitance
should be kept at minimum to minimize additional parasitic capacitance which can cause capacitance
mismatching.
Highest frequency crystal is connected to crystal output pin 1 (QO1). Medium frequency crystal is connected to
crystal output pin 2 (QO2). Lowest frequency crystal is connected to crystal output pin 3 (QO3). The other pin of
each crystal is connected to common crystal input pin QI.
Table 4 below presents some crystal manufacturers having suitable crystals for timesignal receiver application.
Table 4. Crystal Manufacturers and Crystal Types in Alphaphetical Order for Timesignal Receiver Application
Manufacturer
Crystal Type
Dimensions
Web Link
Citizen
Epson
KDS Daishinku
Microcrystal
Seiko
Instruments
CFV-206
C-2-Type
C-4-Type
DT-261
MX1V-L2N
MX1V-T1K
VTC-120
ø 2.0 x 6.0
ø 1.5 x 5.0
ø 2.0 x 6.0
ø 2.0 x 6.0
ø 2.0 x 6.0
ø 2.0 x 8.1
ø 1.2 x 4.7
http://www.citizen.co.jp/tokuhan/quartz/
http://www.epsondevice.com/e/
http://www.kdsj.co.jp/english.html
http://www.microcrystal.com/
http://speed.sii.co.jp/pub/compo/quartz/topE.jsp
Note 2: AGC Capacitor
The AGC and DEC capacitors must have low leakage currents due to very small signal currents through the
capacitors. The insulation resistance of these capacitors should be at minimum 100 MΩ. Also probes with at
least 100 MΩ impedance should be used for voltage probing of AGC and DEC pins. DEC capacitor can be low
leakage chip capacitor.
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19 May, 2005
MAS9179 SAMPLES IN SBDIL 20 PACKAGE
NC 1
20 VSS
19 RFI2
18 RFIM
VDD 2
QO2 3
NC 6
QI 7
AGC 8
17 RFIP
9179Az
YYWW
XXXXX.X
QO1 4
QO3 5
16 RFI3
15 NC
14 PDN1
13 AON
PDN2 9
12 DEC
11 NC
OUT 10
Top Marking Definitions:
YYWW = Year Week
XXXXX.X = Lot Number
z = Sample Version Number
PIN DESCRIPTION
Pin Name
Pin
NC
VDD
QO2
QO1
QO3
NC
QI
AGC
PDN2
OUT
NC
DEC
AON
PDN1
NC
RFI3
RFIP
RFIM
RFI2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Type
Function
Note
P
AO
AO
AO
Positive Power Supply
Quartz Filter Output for Crystal 2
Quartz Filter Output for Crystal 1
Quartz Filter Output for Crystal 3
AI
AO
DI
DO
Quartz Filter Input for Crystal
AGC Capacitor
Power Down/Frequency Selection Input 2
Receiver Output
3
2
AO
DI
DI
Demodulator Capacitor
AGC On Control
Power Down/Frequency Selection Input 1
4
3
AI
AI
AI
AI
G
Receiver Input 3 (for Antenna Capacitor 3)
Positive Receiver Input
Negative Receiver Input
Receiver Input 2 (for Antenna Capacitor 2)
Power Supply Ground
1
5
5
A = Analog, D = Digital, P = Power, G = Ground, I = Input, O = Output, NC = Not Connected
Notes:
1) Pin 6 between QO3 and QI must be connected to VSS to eliminate DIL package leadframe parasitic
capacitances disturbing the crystal filter performance. All other NC (Not Connected) pins are also
recommended to be connected to VSS to minimize noise coupling.
2) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced
(modulated)
- the output is a current source/sink with |IOUT| > 5 µA
- at power down the output is pulled to VSS (pull down switch)
3) PDN1 = VDD and PDN2 = VDD means receiver off
- Fast start-up is triggered when the receiver is after power down controlled to power up
4) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)
- Internal pull-up with current < 1 µA which is switched off at power down
5) Receiver inputs RFIP and RFIM have both 600 kΩ biasing MOSFET-transistors towards ground
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19 May, 2005
ORDERING INFORMATION
Product Code
Product
Description
Capacitance Option
MAS9179A1TC00
Tri Band AM-Receiver IC
with Differential Input
Tri Band AM-Receiver IC
with Differential Input
Tri Band AM-Receiver IC
with Differential Input
Tri Band AM-Receiver IC
with Differential Input
EWS-tested wafer,
Thickness 400 µm.
EWS-tested wafer,
Thickness 400 µm.
EWS-tested wafer,
Thickness 400 µm.
EWS-tested wafer,
Thickness 400 µm.
CC = 0.75 pF
MAS9179A2TC00
MAS9179A3TC00
MAS9179A4TC00
CC = 0.875 pF
CC = 1.25 pF
CC = 1.5 pF
Contact Micro Analog Systems Oy for other wafer thickness options.
LOCAL DISTRIBUTOR
MICRO ANALOG SYSTEMS OY CONTACTS
Micro Analog Systems Oy
Kamreerintie 2, P.O. Box 51
FIN-02771 Espoo, FINLAND
Tel. +358 9 80 521
Fax +358 9 805 3213
http://www.mas-oy.com
NOTICE
Micro Analog Systems Oy reserves the right to make changes to the products contained in this data sheet in order to improve the design or
performance and to supply the best possible products. Micro Analog Systems Oy assumes no responsibility for the use of any circuits shown
in this data sheet, conveys no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that
the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Micro Analog
Systems Oy makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification.
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