NHPM120, NRVHPM120 Surface Mount Ultra Fast Power Rectifier POWERMITE® Power Surface Mount Package http://onsemi.com This ultrafast POWERMITE provides soft recovery fast switching performance in a compact thermally efficient package. The advanced packaging techniques provide for a very efficient micro−miniature space−saving surface mount rectifier. With its unique heatsink design, the POWERMITE offers thermal performance similar to the SMA while being 50% smaller in footprint area. ULTRAFAST RECTIFIER 1.0 AMPERE, 200 VOLTS Features • • • • • • • Fast Soft Switching for Reduced EMI and Higher Efficiency Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant CATHODE ANODE POWERMITE CASE 457 MARKING DIAGRAM 1 M P12G 2 Mechanical Characteristics: • • • • • • POWERMITE is JEDEC Registered as D0−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 Applications • • • • Automotive LED Lighting Engine Control Freewheeling Diode Where Space is at a Premium Flat Panel Display © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 0 M P12 G = Date Code = Device Code = Pb−Free Package ORDERING INFORMATION Package Shipping† NHPM120T3G POWERMITE (Pb−Free) 12000 / Tape & Reel NRVHPM120T3G POWERMITE (Pb−Free) 12000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: NHPM120/D NHPM120, NRVHPM120 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 200 V IO 1.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 165°C IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 30 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 165°C) Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 12 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 75 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 260 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF V Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Reverse Recovery Time IF = 1.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 25°C trr 25 ns Reverse Recovery Time IF = 1.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 50°C trr 50 ns 1.0 1.1 0.85 0.95 mA 0.5 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NHPM120, NRVHPM120 TYPICAL CHARACTERISTICS 100 10 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C TA = 125°C 1 0.1 TA = 25°C 0.01 TA = 175°C TA = 150°C 1 TA = 125°C 0.1 TA = 25°C 0.01 TA = −40°C 0.001 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 0.4 0.2 0.6 1.0 0.8 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.4 1.E−03 1.E−03 1.E−04 TA = 175°C TA = 150°C 1.E−07 TA = 25°C 1.E−07 1.E−09 1.E−08 TA = −40°C 1.E−10 TA = 150°C 1.E−06 TA = 25°C 1.E−08 TA = 125°C 1.E−05 TA = 125°C 1.E−06 TA = 175°C 1.E−04 1.E−05 TA = −40°C 1.E−09 1.E−11 1.E−12 1.E−10 0 20 40 60 80 100 120 140 160 180 200 0 20 40 80 60 100 120 140 160 180 200 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 TJ = 25°C 100 10 1 0 TA = −40°C 0.001 IF(AV), AVERAGE FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 C, JUNCTION CAPACITANCE (pF) 10 20 40 60 80 100 120 140 160 180 200 2.0 DC 1.5 Square Wave 1.0 0.5 RqJC = 12°C/W 0 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating http://onsemi.com 3 160 180 NHPM120, NRVHPM120 TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 3.0 IPK/IAV = 20 2.5 IPK/IAV = 10 TJ = 175°C 2.0 1.5 IPK/IAV = 5 1.0 DC 0.5 Square Wave 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 1000 R(t) (C/W) 100 10 1.0 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 NHPM120, NRVHPM120 PACKAGE DIMENSIONS POWERMITE CASE 457−04 ISSUE F F 0.08 (0.003) C −A− J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S PIN 1 −B− K PIN 2 R L J MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF D H −T− 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 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