CMPT5087E PNP CMPT5088E NPN ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5087E and CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMPT5087E: C2QE CMPT5088E: C1QE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦Collector-Emitter Voltage ♦Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 50 50 5.0 100 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP NPN PNP MAX UNITS ICBO VCB=20V 50 nA IEBO VEB=3.0V 50 nA BVCBO IC=100µA 50 135 150 V IC=1.0mA 50 65 105 V IE=100µA 5.0 8.7 7.5 45 50 100 mV 110 225 400 mV 700 700 800 mV 300 430 390 900 300 435 380 300 430 350 50 125 75 ♦BVCEO ♦BVEBO ♦ VCE(SAT) ♦VCE(SAT) ♦♦VBE(SAT) IC=10mA, IB=1.0mA IC=100mA, IB=10mA hFE IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA ♦ hFE ♦hFE ♦♦fT ♦ Cob Cib VCE=5.0V, IC=100mA VCE=5.0V, IC=500µA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz hfe VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz V 100 MHz 350 4.0 pF 15 pF 1400 3.0 dB ♦ Enhanced specification ♦♦ Additional Enhanced specification R1 (1-February 2010) CMPT5087E PNP CMPT5088E NPN ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT5087E: C2QE CMPT5088E: C1QE R1 (1-February 2010) w w w. c e n t r a l s e m i . c o m