Central CMPT5087E Surface mount complementary silicon transistor Datasheet

CMPT5087E PNP
CMPT5088E NPN
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5087E
and CMPT5088E, are Silicon transistors in an epoxy
molded surface mount package with enhanced
specifications designed for applications requiring high
gain and low noise.
MARKING CODES: CMPT5087E: C2QE
CMPT5088E: C1QE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦Collector-Emitter Voltage
♦Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
UNITS
V
V
V
mA
mW
°C
°C/W
50
50
5.0
100
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
NPN PNP
MAX
UNITS
ICBO
VCB=20V
50
nA
IEBO
VEB=3.0V
50
nA
BVCBO
IC=100µA
50
135
150
V
IC=1.0mA
50
65
105
V
IE=100µA
5.0
8.7
7.5
45
50
100
mV
110
225
400
mV
700
700
800
mV
300
430
390
900
300
435
380
300
430
350
50
125
75
♦BVCEO
♦BVEBO
♦ VCE(SAT)
♦VCE(SAT)
♦♦VBE(SAT)
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
hFE
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
hFE
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
♦ hFE
♦hFE
♦♦fT
♦ Cob
Cib
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500µA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
hfe
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
NF
VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz
V
100
MHz
350
4.0
pF
15
pF
1400
3.0
dB
♦ Enhanced specification
♦♦ Additional Enhanced specification
R1 (1-February 2010)
CMPT5087E PNP
CMPT5088E NPN
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPT5087E: C2QE
CMPT5088E: C1QE
R1 (1-February 2010)
w w w. c e n t r a l s e m i . c o m
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