CJPF08N60 TO-220F Plastic-Encapsulate MOSFETS CJPF08N60 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating Lower RDS(on) z Lower Capacitance z z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 8 Pulsed Drain Current IDM 32 Single Pulsed Avalanche Energy (note1) EAS 250 mJ Power Dissipation PD 2 W RθJA 62.5 ℃/W TJ, TSTG -55 ~+150 TL 260 Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , Duration 5 seconds [email protected] www.zpsemi.com V A ℃ 1 of 3 CJPF08N60 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 600 1.4 V Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =7A Zero gate voltage drain current IDSS VDS =600V, VGS =0V 1 µA Gate-body leakage curren (note2) IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =4A 1.3 Ω On characteristics (note2) 2.0 Dynamic characteristics (note 3) Input capacitance Ciss 1280 Output capacitance Coss Reverse transfer capacitance Crss 11 td(on) 80 VDS =25V,VGS =0V,f =1MHz 120 pF Switching characteristics (note 3) Turn-on delay time (note3) Turn-on rise time (note3) Turn-off delay time (note3) Turn-off fall time (note3) tr td(off) VDD=300V, VGS=10V, 165 RG=25Ω, ID =7A 160 tf ns 120 Notes : 1. L=7mH, IL=8A, VDD=50V, RG=25Ω,Starting TJ=25℃. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 3 CJPF08N60 Output Characteristics Transfer Characteristics 15 5 VDS=10V Pulsed Pulsed VGS= 6V、10V 12 4 (A) ID 9 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=5.5V VGS=5V 6 3 3 2 Ta=100℃ Ta=25℃ 1 VGS=4.5V VGS=4.0V 0 0 0 5 10 15 20 DRAIN TO SOURCE VOLTAGE 25 VDS 30 0 (V) 1 2 3 4 5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID VGS 6 7 (V) RDS(ON) —— VGS 8 2.0 Ta=25℃ Pulsed ID=4A Pulsed ( Ω) 6 RDS(ON) VGS=10V 1.2 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) 1.6 0.8 4 Ta=100℃ 2 0.4 Ta=25℃ 0.0 0 1 2 4 6 DRAIN CURRENT 8 ID 10 2 (A) 4 6 8 10 GATE TO SOURCE VOLTAGE VGS 12 (V) Threshold Voltage IS —— VSD 10 5 (V) 4 ID=250uA VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed Ta=100℃ 0.1 Ta=25℃ 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE [email protected] 1.0 1.2 3 2 1 0 25 VSD (V) 50 75 JUNCTION TEMPERATURE www.zpsemi.com 100 TJ 125 (℃ ) 3 of 3