ON MJE18008 Switch-mode npn bipolar power transistor Datasheet

MJE18008, MJF18008
Switch-mode NPN Bipolar
Power Transistor
For Switching Power Supply Applications
The MJE/MJF18008 have an applications specific state−of−the−art
die designed for use in 220 V line−operated switch−mode Power
supplies and electronic light ballasts.
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POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
Features
• Improved Efficiency Due to Low Base Drive Requirements:
♦
High and Flat DC Current Gain hFE
Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot−to−Lot
Two Package Choices: Standard TO−220 or Isolated TO−220
MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File
#E69369
These Devices are Pb−Free and are RoHS Compliant*
♦
•
•
•
•
COLLECTOR
2,4
1
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Base Breakdown Voltage
VCES
1000
Vdc
Emitter−Base Voltage
VEBO
9.0
Vdc
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
IC
8.0
Adc
ICM
16
Adc
Base Current
− Continuous
IB
4.0
Adc
Base Current
− Peak (Note 1)
IBM
8.0
Adc
RMS Isolation Voltage (Note 2)
Test No. 1 Per Figure 22a
Test No. 1 Per Figure 22b
Test No. 1 Per Figure 22c
(for 1 sec, R.H. < 30%, TA = 25_C)
VISOL
MJF18008
4500
3500
1500
V
Total Device Dissipation @ TC = 25_C
MJE18008
MJF18008
Derate above 25°C
MJE18008
MJF18008
PD
Operating and Storage Temperature
−65 to 150
Max
4
MJE18008G
AYWW
1
2
3
W
W/_C
125
45
1.0
0.36
TJ, Tstg
MARKING
DIAGRAMS
_C
1
2
TO−220AB
CASE 221A−09
STYLE 1
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
MJF18008G
AYWW
3
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction−to−Case
MJE18008
MJF18008
RqJC
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260
_C
_C/W
1.0
2.78
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 10
1
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJE18008/D
MJE18008, MJF18008
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
−
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
ICES
−
−
−
−
−
−
100
500
100
mAdc
IEBO
−
−
100
mAdc
Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
−
−
0.82
0.92
1.1
1.25
Vdc
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
VCE(sat)
−
−
−
−
0.3
0.3
0.35
0.4
0.6
0.65
0.7
0.8
hFE
14
−
6.0
5.0
11
11
10
−
28
9.0
8.0
15
16
20
34
−
−
−
−
−
−
−
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
(TC = 125_C)
(TC = 125_C)
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Collector Cutoff Current (VCE = 800 V, VEB = 0)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
ON CHARACTERISTICS
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
−
13
−
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
100
150
pF
Input Capacitance (VEB = 8.0 V)
Cib
−
1750
2500
pF
VCE(dsat)
−
−
5.5
11.5
−
−
Vdc
(TC = 125°C)
−
−
3.5
6.5
−
−
(TC = 125°C)
−
−
11.5
14.5
−
−
(TC = 125°C)
−
−
2.4
9.0
−
−
ton
−
−
200
190
300
−
ns
toff
−
−
1.2
1.5
2.5
−
ms
ton
−
−
100
250
180
−
ns
toff
−
−
1.6
2.0
2.5
−
ms
tfi
−
−
100
120
180
−
ns
tsi
−
−
1.5
1.9
2.75
−
ms
tc
−
−
250
230
350
−
ns
tfi
−
−
85
135
150
−
ns
tsi
−
−
2.0
2.6
3.2
−
ms
tc
−
−
210
250
300
−
ns
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising IB1 reaches 90% of
final IB1
(see Figure 18)
(IC = 2.0 Adc
IB1 = 200 mAdc
VCC = 300 V)
(IC = 5.0 Adc
IB1 = 1.0 Adc
VCC = 300 V)
1.0 ms
3.0 ms
1.0 ms
3.0 ms
(TC = 125°C)
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)
(TC = 125°C)
Turn−Off Time
(TC = 125°C)
Turn−On Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc, VCC = 300 V)
(TC = 125°C)
Turn−Off Time
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
4. Proper strike and creepage distance must be provided.
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MJE18008, MJF18008
TYPICAL STATIC CHARACTERISTICS
100
VCE = 1 V
TJ = 125°C
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
100
TJ = 25°C
10
TJ = -20°C
1
0.01
1
0.1
TJ = 25°C
10
TJ = -20°C
1
0.01
10
VCE = 5 V
TJ = 125°C
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
10
1.5
IC = 1 A
1
3A
5A
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
TJ = 25°C
8 A 10 A
0.5
1
IC/IB = 10
0.1
IC/IB = 5
0
0.01
0.1
1
0.01
0.01
10
1
10
IC COLLECTOR CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
10000
1.2
TJ = 25°C
f = 1 MHz
Cib
1.1
1000
1
C, CAPACITANCE (pF)
V BE , VOLTAGE (VOLTS)
0.1
IB, BASE CURRENT (AMPS)
1.3
0.9
0.8
0.7 TJ = 25°C
0.6
100
Cob
10
IC/IB = 5
IC/IB = 10
0.5 TJ = 125°C
0.4
0.01
TJ = 25°C
TJ = 125°C
0.1
1
1
10
1
10
100
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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1000
MJE18008, MJF18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1500
4500
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
3500
1000
3000
IC/IB = 5
IC/IB = 10
t, TIME (ns)
TJ = 125°C
t, TIME (ns)
TJ = 25°C
TJ = 125°C
IC/IB = 5
4000
TJ = 25°C
500
2500
2000 IC/IB = 10
1500
1000
500
0
0
0
1
3
2
6
5
4
7
1
8
Figure 8. Resistive Switching, toff
8
5000
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
1500
1000
2
3
3500
IC = 2 A
3000
2500
2000
1500
1000
TJ = 25°C
TJ = 125°C
1
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
4000
2000
500
TJ = 25°C
TJ = 125°C
4500
t si , STORAGE TIME (ns)
IC/IB = 5
2500
t, TIME (ns)
7
6
Figure 7. Resistive Switching, ton
3000
500
IC/IB = 10
4
5
6
7
0
8
IC = 4.5 A
3
4
6
5
7
8
9
10
12
11
13
14
IC COLLECTOR CURRENT (AMPS)
hFE, FORCED GAIN
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
15
300
400
TJ = 25°C
TJ = 125°C
350
t, TIME (ns)
250
tfi
200
150
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
100
50
0
1
2
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
250
tc
300
t, TIME (ns)
5
4
IC, COLLECTOR CURRENT (AMPS)
3500
0
3
2
IC, COLLECTOR CURRENT (AMPS)
tfi
200
tc
150
100
TJ = 25°C
TJ = 125°C
3
4
5
6
7
50
8
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
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8
MJE18008, MJF18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
160
400
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
t fi , FALL TIME (ns)
140
IC = 2 A
130
120
110
100
IC = 4.5 A
90
80
60
3
4
6
5
300
250
200
150
IC = 4.5 A
100
TJ = 25°C
TJ = 125°C
70
TJ = 25°C
TJ = 125°C
50
7
8
9
10
11
12
13
14
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 2 A
350
TC , CROSSOVER TIME (ns)
150
15
3
4
5
6
7
8
9
10
11
12
13
14
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
15
GUARANTEED SAFE OPERATING AREA INFORMATION
100
9
5 ms
10 ms
1 ms
1 ms
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
DC (MJE18008)
10
EXTENDED
SOA
1
DC (MJF18008)
0.1
0.01
10
100
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 mH
8
7
6
5
4
3
2
-5 V
1
VBE(off) = 0 V
0
1000
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
0,6
0,4
THERMAL DERATING
0,2
0,0
20
40
60
80
100
120
140
600
1000
800
200
400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe
Operating Area
1,0
0,8
-1, 5 V
160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated
from the data in Figure 20 and 21. At any case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
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MJE18008, MJF18008
5
VCE
4
dyn 1 ms
3
2
dyn 3 ms
VOLTS
1
0
-1
90% IB
-2
1 ms
-3
-4
-5
0
3 ms
IB
1
2
3
4
TIME
5
6
7
8
Figure 18. Dynamic Saturation Voltage Measurements
10
9
90% IC
tfi
IC
8
tsi
7
6
tc
5
VCLAMP
10% IC
10% VCLAMP
4
IB
3
90% IB1
2
1
0
0
1
2
3
4
TIME
5
6
7
8
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
Iout
MPF930
+10 V
IB
A
IB2
50 W
RB2
MJE210
COMMON
500 mF
150 W
3W
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
-Voff
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
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6
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
MJE18008, MJF18008
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
10
t, TIME (ms)
RqJC(t) = r(t) RqJC
RqJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
100
1000
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18008
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
RqJC(t) = r(t) RqJC
RqJC = 2.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
SINGLE PULSE
0.1
1
10
100
1000
10000
t, TIME (ms)
Figure 21. Typical Thermal Response (ZqJC(t)) for MJF18008
ORDERING INFORMATION
Device
Package
Shipping
MJE18008G
TO−220AB
(Pb−Free)
50 Units / Rail
MJF18008G
TO−220 (Fullpack)
(Pb−Free)
50 Units / Rail
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7
100000
MJE18008, MJF18008
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
0.099″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
LEADS
HEATSINK
HEATSINK
0.099″ MIN
0.110″ MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw−Mounted
Figure 23b. Clip−Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting
technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess
of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely
affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
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8
MJE18008, MJF18008
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Y
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9
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
MJE18008, MJF18008
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
10
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJE18008/D
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