FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 10 A, 30 V. General Description RDS(ON) = 13.5 mΩ @ VGS = 10 V RDS(ON) = 20 mΩ @ VGS = 4.5 V This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D D D D SO-8 S Pin 1 S S G 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDSS Drain–Source Voltage VGSS Gate–Source Voltage ID Drain Current PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range – Continuous Ratings Units 30 V ±20 V (Note 1a) 10 A (Note 1a) 2.5 – Pulsed 50 (Note 1b) W 1.0 –55 to +150 °C (Note 1a) 50 °C/W (Note 1b) 125 (Note 1) 25 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4410A FDS4410A 13" 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS4410A Rev. B 1 www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET May 2005 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆ TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 30 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V V mV/°C 25 µA 1 VDS = 24 V, VGS = 0 V, TJ = 55°C 10 ±100 nA 3 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –5 RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9 A VGS = 10 V, ID = 10 A, TJ = 125°C 9.8 12.0 13.7 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 10 A mV/°C 13.5 20 23 50 mΩ A 48 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, VGS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz 1205 pF 290 pF 115 pF 2.4 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge 3.4 nC Qgd Gate–Drain Charge 4.0 nC VDD = 15 V, ID = 10 A, VGS = 5 V 9 19 ns 5 10 ns 28 44 ns 9 19 ns 12 16 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.1 VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A trr Diode Reverse Recovery Time IF = 10A, diF/dt = 100 A/µs (Note 2) Qrr Diode Reverse Recovery Charge 0.74 1.2 A V 24 nS 27 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDS4410A Rev. B www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 50 3 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V I D, DRAIN CURRENT (A) 40 6.0V 3.5.V 4.5V 30 20 3.0V 10 VGS = 3.0V 2.5 2 3.5V 1.5 4.0V 4.5V 10V 0.5 0 0 0.5 1 1.5 0 2 10 VDS, DRAIN-SOURCE VOLTAGE (V) 30 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.05 ID = 10A VGS = 10V 1.6 ID = 5 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 -50 0.04 0.03 o T A = 125 C 0.02 o TA = 25 C 0.01 0 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 VGS = 0V IS , REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) 6.0V 1 30 20 TA = 125oC 25oC 10 -55oC 10 TA = 125oC 1 o 25 C 0.1 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 0 4 Figure 5. Transfer Characteristics. 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDS4410A Rev. B 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET Typical Characteristics 1600 ID = 10 A VDS = 10V f = 1MHz VGS = 0 V 15V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 1200 Ciss 800 Coss 400 2 Crss 0 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics. 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 100 1ms 10ms RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 5 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE R θJA = 125 oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 t 1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 RθJA (t) = r(t) * Rθ JA R θJA = 125°C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 /t 2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , TIM E (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the cir cuit board design. 4 FDS4410A Rev. B www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDS4410A Rev. B www.fairchildsemi.com FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET TRADEMARKS