AP30G40AEO Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive C C C VCE 400V ICP 130A C ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free TSSOP-8 E E E C G G E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-Emitter Voltage +6 V Pulsed Collector Current, V GE @ 3.3V 130 A ICP o 1 PD@TA=25 C Maximum Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 o C -55 to 150 o C TJ Junction Temperature Range o . Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGE=+ 6V, VCE=0V Min. Typ. Max. Units - - +30 uA - - 10 uA - 2.9 6 V 0.3 - 1.2 V IGES Gate-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V VCE(sat) Collector-Emitter Saturation Voltage VGE=3.3V, ICP=90A (Pulsed) VGE(th) Gate Threshold Voltage VCE=VGE, IC=1mA Qg Total Gate Charge IC=40A - 57 91.2 nC Qge Gate-Emitter Charge VCE=200V - 7 - nC Qgc Gate-Collector Charge VGE=4V - 18 - nC td(on) Turn-on Delay Time VCC=320V - 200 - ns tr Rise Time IC=130A - 1.3 - us td(off) Turn-off Delay Time RG=10Ω - 600 - ns tf Fall Time VGE=3.3V - 1.4 - us Cies Input Capacitance VGE=0V - 4000 - pF Coes Output Capacitance VCE=30V - 30 - pF Reverse Transfer Capacitance f=1.0MHz - 20 - Cres RthJA 1 Thermal Resistance Junction-Ambient - - pF 125 o C/W Notes: 2 1.Surface mounted on 1 in copper pad of FR4 board, t=10s. Data and specifications subject to change without notice 1 201503311 AP30G40AEO 160 120 o 100 IC , Collector Current (A) IC , Collector Current (A) 120 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V T A = 150 o C 5.0V 4.5V 4.0V 3.5V 3.0V T A =25 C 2.5V 80 V G =2.0V 40 80 V G = 2.0V 60 40 20 0 0 0 2 4 6 8 10 0 12 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics 4 6 8 Fig 2. Typical Output Characteristics 6 160 V GE =3.3V o T A =25 C 120 T A =150 o C 80 . 40 VCE(sat) ,Saturation Voltage(V) V GE = 3.3V IC , Collector Current(A) 2 V CE , Collector-Emitter Voltage (V) 5 4 I C =100A 3 I C =60A 2 I C =20A 0 1 0 1 2 3 4 5 6 -100 -50 0 50 V CE , Collector-Emitter Voltage (V) 150 T j , Junction Temperature ( C) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 10 10 o T A =25 C T A =150 o C VCE ,Collector-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) 100 o 8 6 4 I C = 120A I C =80A I C =40A 2 0 8 6 I C =120A 4 I C =80A I C =40A 2 0 0 1 2 3 4 V GE , Gate-Emitter Voltage(V) Fig 5. Collector Current v.s. Gate-Emitter Voltage 5 6 0 1 2 3 4 5 6 V GE , Gate-Emitter Voltage(V) Fig 6. Collector Current v.s. Gate-Emitter Voltage 2 AP30G40AEO f=1.0MHz 6000 160 T A =70 o C 4000 ICP , Peak Collector Current (A) 5000 C (pF) C ies 3000 2000 1000 C oes C res 0 1 5 9 13 17 21 25 29 33 120 80 40 0 37 0 2 4 6 8 V GE , Gate-to-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V)) Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current VCE 90% RC TO THE OSCILLOSCOPE C VCE G RG VCC=320 V . 10% E VGE + - 3.3V VGE td(on) tr Fig 9. Switching Time Test Circuit td(off) tf Fig 10. Switching Time Waveform 6 VCE TO THE C OSCILLOSCOPE G VCC=200V VGE E + 3~5mA - IG IC VGE , Gate -Emitter Voltage (V) I CP =40A V CE =200V 5 4 3 2 1 0 0 20 40 60 80 100 Q G , Gate Charge (nC) Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform 3 AP30G40AEO MARKING INFORMATION Part Number 30G40AEO Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 4