ON MPS4124G Amplifier transistor npn silicon Datasheet

MPS4124
Amplifier Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCE
25
Vdc
Collector −Base Voltage
VCB
30
Vdc
Emitter −Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
2
THERMAL CHARACTERISTICS
Characteristic
TO−92
CASE 29−11
STYLE 1
1
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
3
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPS
4124
AYWW G
G
MPS4124
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS4124
MPS4124G
MPS4124RLRA
MPS4124RLRAG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1
Package
Shipping †
TO−92
5000 Units/Box
TO−92
(Pb−Free)
5000 Units/Box
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPS4124/D
MPS4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
25
−
30
−
5.0
−
−
50
−
50
120
60
360
−
−
0.3
−
0.95
170
−
−
4.0
−
13.5
120
480
−
5.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IC = 0, IE = 10 mA)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 V, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mA, VCE = 1.0 V)
(IC = 50 mA, VCE = 1.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = 50 mA, IB = 5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 50 mA, IB = 5.0 mA)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 20 V, f = 100 MHz)
fT
Output Capacitance
(VCB = 5.0 V, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
Small−Signal Current Gain
(IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz)
hfe
Noise Figure
(IC = 100 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 kHz)
NF
http://onsemi.com
2
MHz
pF
pF
−
dB
MPS4124
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MPS4124/D
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