IRF IRF8707GTRPBF control mosfet of sync-buck converters used for notebook processor power Datasheet

PD - 96264
IRF8707GPbF
HEXFET® Power MOSFET
Applications
Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
l
VDSS
30V
Benefits
l
l
l
l
l
l
l
l
Very Low Gate Charge
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating
100% tested for Rg
Lead-Free
Halogen-Free
RDS(on) max
Qg
11.9m:@VGS = 10V 6.2nC
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Description
The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
± 20
9.1
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
ID @ TA = 25°C
ID @ TA = 70°C
Units
V
11
c
A
88
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
W
W/°C
0.02
-55 to + 150
°C
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
Notes  through
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f
g
Typ.
Max.
–––
20
–––
50
Units
°C/W
are on page 9
1
07/10/09
IRF8707GPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
Min. Typ. Max. Units
30
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.022
9.3
–––
11.9
Gate Threshold Voltage
–––
1.35
14.2
1.80
17.5
2.35
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-5.8
–––
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
25
–––
–––
mV/°C VDS = VGS, ID = 25µA
VDS = 24V, VGS = 0V
µA
VDS = 24V, VGS = 0V, TJ = 125°C
150
VGS = 20V
100
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 8.8A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
6.2
1.4
9.3
–––
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
0.7
2.2
–––
–––
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
1.9
2.9
–––
–––
Qoss
Rg
Output Charge
Gate Resistance
–––
–––
3.7
2.2
–––
3.7
td(on)
tr
Turn-On Delay Time
Rise Time
–––
–––
6.7
7.9
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
7.3
4.4
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
760
170
–––
–––
Crss
Reverse Transfer Capacitance
–––
82
–––
RDS(on)
VGS(th)
∆VGS(th)
gfs
Qg
Qgs1
Qgs2
Qgd
V
Conditions
Drain-to-Source Breakdown Voltage
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 11A
mΩ
VGS = 4.5V, ID = 8.8A
V VDS = VGS, ID = 25µA
e
e
–––
1.0
VDS = 15V
nC
VGS = 4.5V
ID = 8.8A
See Figs. 15 & 16
nC
Ω
ns
pF
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 8.8A
RG = 1.8Ω
See Fig. 18
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
53
Units
mJ
–––
8.8
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
ISM
(Body Diode)
Pulsed Source Current
–––
–––
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 8.8A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
12
13
18
20
ns
nC
TJ = 25°C, IF = 8.8A, VDD = 15V
di/dt = 300A/µs
ton
Forward Turn-On Time
2
c
3.1
A
88
A
MOSFET symbol
D
showing the
integral reverse
G
S
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF8707GPbF
100
100
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
1
≤60µs PULSE WIDTH
0.1
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
2.3V
≤60µs PULSE WIDTH
2.3V
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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VGS = 10V
1.5
1.0
0.5
0.1
1
ID = 11A
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF8707GPbF
10000
5.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 8.8A
C, Capacitance (pF)
C oss = C ds + C gd
1000
Ciss
Coss
Crss
100
VDS= 24V
VDS= 15V
4.0
3.0
2.0
1.0
10
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
3
4
5
6
7
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
2
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
1msec
0.1
100µsec
10
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1
1.4
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8707GPbF
12
VGS(th) , Gate Threshold Voltage (V)
2.5
ID, Drain Current (A)
10
8
6
4
2
2.2
1.9
1.6
50
75
100
125
ID = 25µA
1.3
0
25
ID = 250µA
1.0
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
SINGLE PULSE
( THERMAL RESPONSE )
0.1
PDM
τJ
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τA
τ1
τ2
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci= τi/Ri
0.001
1E-006
1E-005
0.0001
0.001
τA
Ri (°C/W)
τi (sec)
2.2284
0.000169
7.0956
0.013738
25.4895
0.68725
15.1981
25.8
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8707GPbF
250
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
35
ID = 11A
30
25
20
TJ = 125°C
15
T J = 25°C
10
ID
0.67A
0.82A
BOTTOM 8.80A
TOP
200
150
100
5
50
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
L
VDS
DUT
DRIVER
0
D.U.T
RG
IAS
20V
L
tp
0.01Ω
+
- VDD
1K
20K
VCC
S
A
I AS
Fig 15. Gate Charge Test Circuit
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
Vds
Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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IRF8707GPbF
D.U.T
Driver Gate Drive
ƒ
+
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
‚
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
VDS
90%
D.U.T.
+
- V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
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10%
VGS
td(on)
tr
td(off) tf
Fig 18b. Switching Time Waveforms
7
IRF8707GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
(;$03/(7+,6,6$1,5)*3%)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8707GPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.38mH, RG = 25Ω, IAS = 8.8A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
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9