PHILIPS BU2515AF Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
PINNING - SOT199
PIN
TYP.
MAX.
UNIT
4.5
0.2
1500
800
9
20
45
5.0
0.4
V
V
A
A
W
V
A
µs
Ths ≤ 25 ˚C
IC = 4.5 A; IB = 0.9 A
f = 56 kHz
ICsat = 4.5 A; f = 56 kHz
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
c
case
b
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-55
-
1500
800
9
20
5
7.5
125
6
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
2.8
K/W
35
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
5
13.5
17.2
8.2
1.0
5.0
1.0
10.8
mA
V
V
V
TYP.
MAX.
UNIT
2.2
0.2
3.0
0.4
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEsat
VBEsat
hFE
hFE
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IC = 4.5 A; IB = 0.9 A
IC = 4.5 A; IB = 0.9 A
IC = 500 mA; VCE = 5 V
IC = 4.5 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ts
tf
PARAMETER
CONDITIONS
Switching times (56 kHz line
deflection circuit)
ICsat = 4.5 A; LC = 250 µH; Cfb = 4 nF;
IB(end) =0.65 A; LB = 1.5 µH;
-VBB = -4 V; -IBM = 2.7 A
Turn-off storage time
Turn-off fall time
TRANSISTOR
ICsat
ICsat
90 %
IC
DIODE
t
IC
IBend
IB
10 %
tf
t
t
ts
8.8us
IB
IBend
18us
t
VCE
- IBM
t
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AF
+ 150 v nominal
adjust for ICsat
VCEsat / V
10
BU2515AF/X
Ths = 25 C
Ths = 85 C
Lc
1
IC/IB = 10
IC/IB = 5
LB
IBend
T.U.T.
0.1
Cfb
-VBB
0.01
0.1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.3. Switching times test circuit.
hFE
1
BU2515AF/X
VBEsat / V
100
BU2515AF/AX
1.2
VCE = 1 V
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
1.1
IC = 6 A
1
10
0.9
0.8
IC = 4 A
0.7
1
0.01
0.1
1
10
IC / A
0.6
100
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
0
1
2
3
IB / A
4
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
BU2515AF/X
PTOT / W
100
BU2515AF/DF/AX/DX
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
Ths = 25 C
Ths = 85 C
10
10
1
0.01
1
0.1
1
10
IC / A
100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
September 1997
0
0.5
1
IB / A
1.5
2
Fig.8. Typical losses.
PTOT = f (IB); IC = 4.5 A; f = 56 kHz
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ts/tf / us
BU2515AF
VCC
BU2515AF/DF/AX/DX
5
4
LC
3
2
IBend
1
-VBB
0
0
0.5
1
1.5
2
IB / A
Normalised Power Derating
PD%
IC / A
30
with heatsink compound
110
CFB
T.U.T.
Fig.12. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
CFB = 0.5 - 8 nF; IB(end) = 0.65 - 1.3 A
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 4.5 A; Tj = 85˚C; f = 56 kHz
120
VCL
LB
BU2515
100
90
80
70
20
Area where
fails occur
60
50
10
40
30
20
10
0
100
0
0
20
40
60
80
Ths / C
100
120
1500
Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
10
1000
VCE / V
140
Zth / (K/W)
BU2515AF/AX
Ic(sat) (A)
8
7
1
0.1
0.5
6
0.2
0.1
0.05
5
4
0.02
3
PD
0.01
tp
D=
tp
T
2
1
D=0
0.001
1E-06
t
T
1E-04
1E-02
t/s
0
1E+00
10
20
30
40
50
60
70
80
frequency (kHz)
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
September 1997
0
Fig.14. ICsat during normal running vs. frequency of
operation for optimum performance
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AF
MECHANICAL DATA
Dimensions in mm
15.3 max
Net Mass: 5.5 g
5.2 max
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
2.1 max
5.45
3
1.2
1.0
0.7 max
0.4 M
2.0
5.45
Fig.15. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2515AF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.100
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