Isahaya INJ0003AX Silicon p-channel mosfet Datasheet

INJ0003AX SERIES
・PRELIMINARY
High speed switching
Silicon P-channel MOSFET
Notice: This is not a final specification
Some parametric are subject to change.
OUTLINE DRAWING
DESCRIPTION
INJ0003AX is a Silicon P-channel MOSFET.
This product is most suitable for low voltage
use such as portable machinery , because of low
voltage drive and low on resistance.
INJ0003AT2
INJ0003AM1
2.1
0.3
②
③
0~0.1
APPLICATION
high speed switching , Analog switching
JEITA, JEDEC:-
ISAHAYA:T-USM
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INJ0003AU1
INJ0003AC1
1.6
2.5
1.6
1.0
③
①
②
1.5
0.5
0.4
0.5
0.95
0.4
2.9
1.90
②
0.8
0.3
0.5
①
0.5
0.4
0.95
EQUIVALENT CIRCUIT
D
G
0.425
0.15
①
1.25
0.7
0.5
0.9
③
0.65
1.2
0.8
2.0
1.3
②
0.2
0.25
0.4
①
0.4
FEATURE
0.425
0.65
0.8
0.2
・Input impedance is high, and not necessary to
consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=-0.6~-1.2V
・Low on Resistance. Ron=2Ω(TYP)
・High speed switching.
・Small package for easy mounting.
Unit:mm
③
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
ISAHAYA ELECTRONICS CORPORATION
0.16
0~0.1
0.8
1.1
0.15
0~0.1
0.55
0.7
S
JEITA:SC-59
JEDEC:Similar to TO-236
T TERMINAL CONNECTOR
①:GATE
②:SOURCE
③:DRAIN
INJ0003AX SERIES
・PRELIMINARY
High speed switching
Silicon P-channel MOSFET
Notice: This is not a final specification
Some parametric are subject to change.
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VDSS
VGSS
I D
Drain-source voltage
Gate-source voltage
Drain current
Total
power
dissipation
(Ta=25℃)
Channel temperature
Range of Storage temperature
PD
Tch
Tstg
RATING
INJ0003AU1
INJ0003AM1
-20
±8
-200
INJ0003AT2
125(※)
150
+125
-55~+125
ELECTRICAL CHARACTERISTICS(Ta=25℃)
200
mW
℃
℃
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
PARAMETER
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
Drain-source breakdown voltage
I D=-100μA, VGS=0V
Gate-source leak current
V
GS
Zero gate voltage drain current
V
DS
Gate threshold voltage
I D=-250μA, V
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
V
V
DS
Output capacitance
V
DS=-10V, V
Switching time
V
V
Ciss
Coss
tON
tOFF
V
V
mA
+150
-55~+150
SYMBOL
RDS(ON)
UNIT
INJ0003AC1
TEST CONDITION
MIN
-20
LIMIT
TYP
-
MAX
-
-
-
±0.5
μA
=±5V, VDS=0V
=-20V ,VGS=0V
UNIT
V
-
-
-50
μA
-0.6
-
-1.2
V
-
280
-
mS
-
2
-
Ω
GS
=0V,f=1MHz
-
37
-
pF
GS=0V,f=1MHz
-
12
-
pF
DD
-
16
-
GS
-
110
-
DS= V
GS
=-10V, I D=-0.1A
DS
I D=-100mA, V
=-10V, V
=-4.0V
GS
=-5V , I D=-10mA
=0~-5V
ns
Switching time test condition
test circuit
OUT
IN
0
RL
50Ω
-5V
10μs
VDD=-5V
D.U.≦1%
Common source
Ta=25℃
0V
input
waveform
10%
90%
-5V
VDD
VDS(ON)
90%
output
waveform
10%
VDD
tf
tr
ton
ISAHAYA ELECTRONICS CORPORATION
toff
TYPICAL CHARACTERISTICS
ID -VDS
Ta=25℃
-100
-5
-1.4V
-1.6V
-1.0V
-1.5V
-1.3V
-60
-1.2V
-40
-1.1V
VGS=-1.0V
-20
-0.95V
-4
Drain current ID (mA)
-80
Drain current ID (mA)
ID -VDS(Low voltage region)
Ta=25℃
-0.9V
-3
-0.85V
-2
VGS=-0.8V
-1
-0
-0
-0
-2
-4
-6
-8
-10
-0
-0.1
Drain-Source voltage VDS (V)
-0.2
IDR -VDS
-0.5
-1000
Ta=25℃
VDS=-10V
Ta=25℃
VGS=0V
Drain current ID (mA)
Drain reverse current IDR (mA)
-0.4
ID -VGS
-100
-10
-1
-100
-10
-1
0
0.5
1
1.5
2
-0
-1
Drain-Source voltage VDS (V)
-2
-3
-4
-5
Gate-Source voltage VGS (V)
|Yfs| - ID
VDS(ON) -ID
1000
-1000
Ta=25℃
VGS=-4V
Ta=25℃
VDS=-10V
Drain-Source ON voltage
VDS(ON) (mV)
Forward transfer admittance
|Yfs| (mS)
-0.3
Drain-Source voltage VDS (V)
100
10
-100
-10
-1
1
-1
-10
-100
-1
-1000
-10
-100
Drain current ID (mA)
Drain current ID (mA)
t - ID
C - VDS
10000
100
Ta=25℃
1000
Ciss
tf
Capacitance C (pF)
Switching time t (ns)
toff
100
ton
10
Coss
Ta=25℃
VGS=0V
tr
1
-0.1
10
-1
-10
Drain current ID (mA)
-100
1
-0.1
-1
-10
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2007
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