INJ0003AX SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0003AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. INJ0003AT2 INJ0003AM1 2.1 0.3 ② ③ 0~0.1 APPLICATION high speed switching , Analog switching JEITA, JEDEC:- ISAHAYA:T-USM JEITA:SC-70 JEDEC:- TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN INJ0003AU1 INJ0003AC1 1.6 2.5 1.6 1.0 ③ ① ② 1.5 0.5 0.4 0.5 0.95 0.4 2.9 1.90 ② 0.8 0.3 0.5 ① 0.5 0.4 0.95 EQUIVALENT CIRCUIT D G 0.425 0.15 ① 1.25 0.7 0.5 0.9 ③ 0.65 1.2 0.8 2.0 1.3 ② 0.2 0.25 0.4 ① 0.4 FEATURE 0.425 0.65 0.8 0.2 ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V ・Low on Resistance. Ron=2Ω(TYP) ・High speed switching. ・Small package for easy mounting. Unit:mm ③ JEITA:SC-75A JEDEC:- TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN ISAHAYA ELECTRONICS CORPORATION 0.16 0~0.1 0.8 1.1 0.15 0~0.1 0.55 0.7 S JEITA:SC-59 JEDEC:Similar to TO-236 T TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN INJ0003AX SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER VDSS VGSS I D Drain-source voltage Gate-source voltage Drain current Total power dissipation (Ta=25℃) Channel temperature Range of Storage temperature PD Tch Tstg RATING INJ0003AU1 INJ0003AM1 -20 ±8 -200 INJ0003AT2 125(※) 150 +125 -55~+125 ELECTRICAL CHARACTERISTICS(Ta=25℃) 200 mW ℃ ℃ ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. PARAMETER V(BR)DSS IGSS IDSS Vth | Yfs | Drain-source breakdown voltage I D=-100μA, VGS=0V Gate-source leak current V GS Zero gate voltage drain current V DS Gate threshold voltage I D=-250μA, V Forward transfer admittance Static drain-source on-state resistance Input capacitance V V DS Output capacitance V DS=-10V, V Switching time V V Ciss Coss tON tOFF V V mA +150 -55~+150 SYMBOL RDS(ON) UNIT INJ0003AC1 TEST CONDITION MIN -20 LIMIT TYP - MAX - - - ±0.5 μA =±5V, VDS=0V =-20V ,VGS=0V UNIT V - - -50 μA -0.6 - -1.2 V - 280 - mS - 2 - Ω GS =0V,f=1MHz - 37 - pF GS=0V,f=1MHz - 12 - pF DD - 16 - GS - 110 - DS= V GS =-10V, I D=-0.1A DS I D=-100mA, V =-10V, V =-4.0V GS =-5V , I D=-10mA =0~-5V ns Switching time test condition test circuit OUT IN 0 RL 50Ω -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 0V input waveform 10% 90% -5V VDD VDS(ON) 90% output waveform 10% VDD tf tr ton ISAHAYA ELECTRONICS CORPORATION toff TYPICAL CHARACTERISTICS ID -VDS Ta=25℃ -100 -5 -1.4V -1.6V -1.0V -1.5V -1.3V -60 -1.2V -40 -1.1V VGS=-1.0V -20 -0.95V -4 Drain current ID (mA) -80 Drain current ID (mA) ID -VDS(Low voltage region) Ta=25℃ -0.9V -3 -0.85V -2 VGS=-0.8V -1 -0 -0 -0 -2 -4 -6 -8 -10 -0 -0.1 Drain-Source voltage VDS (V) -0.2 IDR -VDS -0.5 -1000 Ta=25℃ VDS=-10V Ta=25℃ VGS=0V Drain current ID (mA) Drain reverse current IDR (mA) -0.4 ID -VGS -100 -10 -1 -100 -10 -1 0 0.5 1 1.5 2 -0 -1 Drain-Source voltage VDS (V) -2 -3 -4 -5 Gate-Source voltage VGS (V) |Yfs| - ID VDS(ON) -ID 1000 -1000 Ta=25℃ VGS=-4V Ta=25℃ VDS=-10V Drain-Source ON voltage VDS(ON) (mV) Forward transfer admittance |Yfs| (mS) -0.3 Drain-Source voltage VDS (V) 100 10 -100 -10 -1 1 -1 -10 -100 -1 -1000 -10 -100 Drain current ID (mA) Drain current ID (mA) t - ID C - VDS 10000 100 Ta=25℃ 1000 Ciss tf Capacitance C (pF) Switching time t (ns) toff 100 ton 10 Coss Ta=25℃ VGS=0V tr 1 -0.1 10 -1 -10 Drain current ID (mA) -100 1 -0.1 -1 -10 Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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