MSB52 Glass Passivated Single Phase Rectifier Bridge VRRM / VDRM IFAV / ITAV 800 to 1800V 50Amp Features y y Circuit y Blocking voltage:800 to 1600V High surge currents Glass passivated chip Applications MSB y y y y Single phase rectifiers for power supplies Input rectifiers for variable frequency drives Rectifiers for DC motor field supplies Battery charger rectifiers Module Type TYPE VRRM /VDRM VRSM MSB52-08 MSB52-12 MSB52-16 MSB52-18 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V ◆Diode Maximum Ratings Symbol Item Conditions Values Units ID Output Current(D.C.) Tc=100℃ 50 A IFSM Surge forward current t=10mS Tvj =25℃ t=10mS Tvj =25℃ a.c.50HZ;r.m.s.;1min 600 A 1800 A2s 3000 V -40 to +150 -40 to +125 ℃ 2 it Circuit Fusing Consideration Visol Isolation Breakdown Voltage(R.M.S) Tvj Tstg Operating Junction Temperature Storage Temperature Mt Ms Mounting Torque 5±15% To heatsink(M5) 5±15% Nm 130 g Module（Approximately） Weight Thermal Characteristics Symbol Item Moudle(Typ.) Rth(j-c) Rth(c-s) To terminals(M5) ℃ Nm Moudle(approximately) Values Units Junction to Case(TOTAL) Conditions 0.35 Case to Heatsink 0.07 ℃/W ℃/W Values Units Electrical Characteristics Symbol Item Conditions VFM Forward Voltage Drop, max. T=25℃ IF =150A 1.8 V IRRM Repetitive Peak Reverse Current, max. Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM 0.3 5 mA mA Document Number: MSB52 Oct.15,2014 www.smsemi.com 1 MSB52 Performance Curves 200 100 A A Single phase 80 150 60 100 typ. 40 max. 50 20 25℃ - - -125℃ IF ID 0 0 VF 0.5 1.0 1.5 V 2.0 0 0 Tc 50 ℃ 100 150 Fig2. Forward Current Derating Curve Fig1. Forward Characteristics 0.40 1000 ℃/ W A 50HZ Per module Per diode Zth(j-C) 0.20 Single phase half wave Tj=25℃ start 500 0 0 0.001 t 0.01 0.1 1.0 10 1 S 100 Fig3. Transient thermal impedance Document Number: MSB52 Oct.15,2014 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current www.smsemi.com 2 MSB52 Package Outline Information CASE: B2-1 Dimensions in mm Document Number: MSB52 Oct.15,2014 www.smsemi.com 3