Fairchild LED55CF Gaas infrared emitting diode Datasheet

GaAs INFRARED EMITTING DIODE
LED55BF
LED55CF
LED56F
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.155 (3.94)
MAX
1.00 (25.4)
MIN
ANODE
(CASE)
SCHEMATIC
0.100 (2.54)
0.050 (1.27)
1
0.040 (1.02)
ANODE
(Connected
To Case)
3
3
Ø0.020 (0.51) 2X
0.040 (1.02)
45°
CATHODE
1
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
 2001 Fairchild Semiconductor Corporation
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6/05/01
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GaAs INFRARED EMITTING DIODE
LED55BF
ABSOLUTE MAXIMUM RATINGS
LED55CF
LED56F
(TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
IF
VR
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 ! steradians.
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
IF = 100 mA
"PE
#
VF
IR
PO
PO
PO
tr
tf
—
—
—
—
3.5
5.4
1.5
—
—
940
±40
—
—
—
—
—
1.0
1.0
—
—
1.7
10
—
—
—
—
—
nm
Deg.
V
µA
mW
mW
mW
µs
µs
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power LED55BF(7)
Total Power LED55CF(7)
Total Power LED56F(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
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IF = 100 mA
VR = 3 V
IF = 100 mA
IF = 100 mA
IF = 100 mA
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GaAs INFRARED EMITTING DIODE
LED55BF
LED55CF
LED56F
TYPICAL PERFORMANCE CURVES
Figure 1. Power Output vs. Input Current
100
50
20
PULSED
PW = 80 µsec
FORWARD
CURRENT
PO, NORMALIZED POWER OUTPUT
10
5
2
CONTINUOUS
FORWARD
CURRENT
1.0
0.5
NORMALIZED TO
I F = 100 mA
TA = 25°C
0.2
0.1
0.05
0.02
0.01
.001
.002
.005
.01
.02
.05
0.1
0.2
0.5
1.0
2
5
10
IF, FORWARD CURRENT (A)
Figure 3. Forward Voltage vs. Forward Current
10
8.0
6.0
Figure 2. Power Output vs. Temperature
1.4
4.0
2.0
IF, FORWARD CURRENT (A)
PO, NORMALIZED POWER OUTPUT
1.2
1.0
0.8
0.6
0.4
NORMALIZED TO
I F = 100 mA
TA = 25°C
0.2
0.1
.08
.06
.04
0.2
0
1.0
0.8
0.6
0.4
.02
-50
-25
0
25
50
75
100
125
150
.01
TA, AMBIENT TEMPERATURE (°C)
0
1
3
2
4
5
6
7
8
9
10
VF, FORWARD VOLTAGE (V)
Figure 5. Typical Radiation Pattern
100
40
80
RELATIVE OUTPUT (%)
IF, FORWARD CURRENT (mA)
Figure 4. Forward Voltage vs. Forward Current
100
80
60
20
TA = 100°C
25°C
-55°C
10
8
6
4
.9
1.0
1.1
1.2
1.3
1.4
0
1.5
-80
6/05/01
-60
-40
-20
0
20
40
60
80
θ - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
VF, FORWARD VOLTAGE (V)
DS300313
40
20
2
1
60
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GaAs INFRARED EMITTING DIODE
LED55BF
LED55CF
LED56F
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
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2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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