BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications 2nd LNA stage and mixer stage in DBS LNB’s Satellite radio Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ka band oscillators (DRO’s) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 2.8 V VEBO emitter-base voltage open collector - - 1.0 V IC collector current - 25 40 mA mW Ptot total power dissipation Tsp 90 C hFE DC current gain IC = 10 mA; VCE = 2 V; Tj = 25 C [1] - - 136 160 280 400 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 70 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - 55 - GHz Gp(max) maximum power gain IC = 25 mA; VCE = 2 V; f = 5.8 GHz; Tamb = 25 C - 18 - dB NF noise figure IC = 5 mA; VCE = 2 V; f = 5.8 GHz; S = opt; Tamb = 25 C - 0.7 - dB [2] [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). 2. Pinning information Table 2. Discrete pinning Pin Description 1 emitter 2 base 3 emitter 4 collector Simplified outline 3 Graphic symbol 4 4 2 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number BFU725F/N1 Package Name Description Version - plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F 4. Marking Table 4. Marking Type number Marking Description BFU725F/N1 B7* * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China BFU725F_N1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 2.8 V VEBO emitter-base voltage open collector - 1.0 V IC collector current - 40 mA - 136 mW Tsp 90 C [1] Ptot total power dissipation Tstg storage temperature 65 +150 C Tj junction temperature - 150 C [1] Tsp is the temperature at the solder point of the emitter lead. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 440 K/W 001aah424 200 Ptot (mW) 150 100 50 0 0 40 80 120 160 Tsp (°C) Fig 1. BFU725F_N1 Product data sheet Power derating curve All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0 mA 10 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 2.8 - - V - 25 40 mA - IC collector current ICBO collector-base cut-off current IE = 0 mA; VCB = 4.5 V - hFE DC current gain IC = 10 mA; VCE = 2 V 160 280 400 100 nA CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 268 - fF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 400 - fF CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 70 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C - 55 - GHz Gp(max) maximum power gain IC = 25 mA; VCE = 2 V; Tamb = 25 C f = 1.5 GHz - 28 - dB f = 1.8 GHz - 27 - dB f = 2.4 GHz - 25.5 - dB f = 5.8 GHz - 18 - dB f = 12 GHz - 13 - dB f = 1.5 GHz - 26.7 - dB f = 1.8 GHz - 25.4 - dB f = 2.4 GHz - 23 dB f = 5.8 GHz - 16 - dB f = 12 GHz - 9.3 - dB f = 1.5 GHz - 0.42 - dB f = 1.8 GHz - 0.43 - dB f = 2.4 GHz - 0.47 - dB f = 5.8 GHz - 0.7 - dB f = 12 GHz - 1.1 - dB f = 1.5 GHz - 24 - dB f = 1.8 GHz - 22 - dB f = 2.4 GHz - 20 - dB s212 NF Gass insertion power gain noise figure associated gain BFU725F_N1 Product data sheet [1] IC = 25 mA; VCE = 2 V; Tamb = 25 C - IC = 5 mA; VCE = 2 V; S = opt; Tamb = 25 C IC = 5 mA; VCE = 2 V; S = opt; Tamb = 25 C f = 5.8 GHz - 13.5 - dB f = 12 GHz - 10 dB All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 - © NXP B.V. 2011. All rights reserved. 4 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 C unless otherwise specified. Symbol Parameter Conditions PL(1dB) IC = 25 mA; VCE = 2 V; ZS = ZL = 50 ; Tamb = 25 C output power at 1 dB gain compression IP3 [1] Min Typ Max Unit f = 1.5 GHz - 8.5 - dBm f = 1.8 GHz - 9 - dBm f = 2.4 GHz - 8.5 - dBm f = 5.8 GHz - 8 - dBm f1 = 1.5 GHz - 17 - dBm f1 = 1.8 GHz - 17 - dBm f1 = 2.4 GHz - 17 - dBm f1 = 5.8 GHz - 19 - dBm IC = 25 mA; VCE = 2 V; ZS = ZL = 50 ; Tamb = 25 C; f2 = f1 + 1 MHz third-order intercept point Gp(max) is the maximum power gain, if K 1. If K 1 then Gp(max) = MSG. 001aak271 30 hFE (1) (2) IC (mA) 001aak272 400 (3) 350 (4) 20 (5) (6) 300 (7) (8) (9) 10 (10) 250 (1) (2) (3) (11) 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 0 10 20 30 IC (mA) Tamb = 25 C. Tamb = 25 C. (1) IB = 110 A (1) VCE = 1 V (2) IB = 100 A (2) VCE = 1.5 V (3) IB = 90 A (3) VCE = 2 V (4) IB = 80 A (5) IB = 70 A (6) IB = 60 A (7) IB = 50 A (8) IB = 40 A (9) IB = 30 A (10) IB = 20 A (11) IB = 10 A Fig 2. Collector current as a function of collector-emitter voltage; typical values BFU725F_N1 Product data sheet Fig 3. DC current gain a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 001aah427 160 001aak273 60 CCBS (fF) fT (GHz) 120 40 80 20 40 0 0 0 4 8 12 0 10 20 30 VCB (V) f = 1 MHz, Tamb = 25 C. Fig 4. 40 IC (mA) VCE = 2 V; f = 2 GHz; Tamb = 25 C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5. Transition frequency as a function of collector current; typical values 001aah429 102 (1) (2) (3) G (dB) MSG Gmax (4) MSG 10 (5) Gmax 1 10−1 1 102 10 IC (mA) VCE = 2 V; Tamb = 25 C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz Fig 6. Gain as a function of collector current; typical value BFU725F_N1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 001aah430 50 G (dB) 001aah431 50 G (dB) 40 MSG 40 MSG IS21I2 30 30 IS21I2 20 20 Gp(max) Gp(max) MSG MSG 10 0 10−2 10−1 1 10 0 10−2 102 10 10−1 1 f (GHz) VCE = 2 V; IC = 5 mA; Tamb = 25 C. Fig 7. VCE = 2 V; IC = 25 mA; Tamb = 25 C. Gain as a function of frequency; typical values 001aah432 2.0 102 10 f (GHz) NFmin (dB) Fig 8. Gain as a function of frequency; typical values 001aah433 2.0 NFmin (dB) 1.6 1.6 (1) (1) 1.2 (2) 1.2 (2) 0.8 0.8 (3) (4) (5) 0.4 0.4 0 0 0 10 20 30 0 4 8 IC (mA) 12 16 f (GHz) VCE = 2 V; Tamb = 25 C. VCE = 2 V; Tamb = 25 C. (1) f = 12 GHz (1) IC = 25 mA (2) f = 5.8 GHz (2) IC = 5 mA (3) f = 2.4 GHz (4) f = 1.8 GHz (5) f = 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU725F_N1 Product data sheet Fig 10. Minimum noise figure as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.48 0.38 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-07-12 06-03-16 SOT343F Fig 11. Package outline SOT343F BFU725F_N1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Abbreviations Acronym Description CDMA Code Division Multiple Access DBS Direct Broadcast Satellite DC Direct Current DRO Dielectric Resonator Oscillator LNA Low Noise Amplifier LNB Low Noise Block Ka Kurtz above NPN Negative-Positive-Negative RF Radio Frequency WLAN Wireless Local Area Network 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU725F_N1 v.2 20111103 Product data sheet - BFU725F_N1 v.1 Modifications: BFU725F_N1 v.1 BFU725F_N1 Product data sheet • • Table 1 on page 1: The maximum value for VEBO has been changed to 1.0 V. Table 5 on page 3: The maximum value for VEBO has been changed to 1.0 V. 20090713 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 - © NXP B.V. 2011. All rights reserved. 9 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from competent authorities. BFU725F_N1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BFU725F_N1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2011 © NXP B.V. 2011. All rights reserved. 11 of 12 BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 November 2011 Document identifier: BFU725F_N1