FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Models Automotive Systems Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature -TB334, “Guidelines for Soldering Surface Mount Componets to PC Boards“ Qualified to AEC Q101 RoHS Compliant ©2008 Fairchild Semiconductor Corporation FDH5500_F085 Rev. A1 1 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET October 2008 Symbol Drain to Source Voltage VDSS Parameter Ratings 55 (Note 1) VDGR Drain to Gate Voltage (RGS = 20kΩ) VGS Gate to Source Voltage (Note 1) Drain Current Continuous (TC < 135oC, VGS = 10V) ID V V A See Figure 4 Single Pulse Avalanche Energy PD 55 ±20 75 Pulsed EAS Units V (Note 2) 864 mJ Power Dissipation 375 W Dreate above 25oC 2.5 W/oC TJ, TSTG Operating and Storage Temperature -55 to + 175 TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) 300 Tpkg Max. Package Temp. for Soldering (Package Body for 10sec) 260 o C Thermal Characteristics RθJC Thermal Resistance Junction to Case 0.4 oC/W RθJA Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area 30 o C/W Package Marking and Ordering Information Device Marking FDH5500 Device FDH5500_F085 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 55 - - VDS = 50V, VGS = 0V - - 1 VDS = 45V - - 250 VGS = ±20V - - ±100 TC = 150oC μA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 2.9 4 V rDS(on) Drain to Source On Resistance ID = 75A, VGS= 10V - 5.2 7 mΩ VDS = 25V, VGS = 0V, f = 1MHz - 3565 - pF - 1310 - pF - 395 - pF - 206 268 nC - 118 153 nC - 6.2 8.1 nC - 17.8 - nC - 51 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 20V VGS = 0 to 20V Qg(10) Total Gate Charge at 10V VGS = 0 to 10V Qg(TH) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDH5500_F085 Rev. A1 2 VDD = 30V ID = 75A RL = 0.4Ω Ig = 1.0mA www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 185 ns td(on) Turn-On Delay Time - 13.7 - ns tr Rise Time td(off) Turn-Off Delay Time tf Fall Time toff Turn-Off Time VDD = 30V, ID = 75A, RL = 0.4Ω, VGS = 10V, RGS = 2.5Ω - 102 - ns - 34 - ns - 22 - ns - - 91 ns - 1 1.25 V - 60 78 ns - 77 100 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 75A IF = 75A, dISD/dt = 100A/μs Notes: 1: Starting TJ = 25oC to175oC. 2: Starting TJ = 25oC, L = 0.48mH, IAS = 60A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDH5500_F085 Rev. A1 3 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 180 1.0 150 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 120 VGS = 10V 90 60 30 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC 0.01 -5 10 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDH5500_F085 Rev. A1 4 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100us 100 1ms 10 10ms DC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.01 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 160 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 80 TJ = 175oC 40 TJ = -55oC VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 VGS = 6V VGS = 5V 40 VGS = 4.5V TJ = 25oC 0 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 75A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 30 20 TJ = 175oC 10 o TJ = 25 C 0 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDH5500_F085 Rev. A1 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 40 VGS = 5.5V 80 2.2 2.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 75A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1.2 1.20 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1000 Coss 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 Figure 13. Capacitance vs Drain to Source Voltage FDH5500_F085 Rev. A1 1.10 1.05 1.00 0.95 0.90 0.85 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 f = 1MHz VGS = 0V ID = 1mA 1.15 10 ID = 75A 8 VDD = 30V VDD = 20V 6 VDD = 40V 4 2 0 0 20 40 60 80 100 Qg, GATE CHARGE(nC) 120 140 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ The Power Franchise® ® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 FDH5500_F085 Rev. A1 7 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.